Patents by Inventor Fu XIAO

Fu XIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6534052
    Abstract: The present invention is a method for markedly improving cardiac function and repairing heart tissue in a living mammalian subject after the occurrence of a myocardial infarction. The method is a surgical technique which introduces and implants mammalian embryonic stem cells into the infarcted area of the myocardium. After implantation, the embryonic stem cells form stable grafts and survive indefinitely within the infarcted area of the heart in the living host. The demonstrated beneficial effects of the method include a decreased infarcted area and improved cardiac function as assessed by hemodynamic and echocardiographic measurements.
    Type: Grant
    Filed: September 5, 2000
    Date of Patent: March 18, 2003
    Inventors: Yong-Fu Xiao, James P. Morgan
  • Patent number: 6496337
    Abstract: A spin valve structure that is thinner than currently available spin valves is described. This improvement is achieved through use of a thinner free layer. The key feature of the invention is the insertion of a seed enhancement layer between the seed and the free layer. The seed enhancement layer must have a FCC crystal structure, our preferred material for it being NiCu. When this layer is present, a constant GMR ratio of about 7% is obtained for a thickness range of the free layer of from 10 to 40 Angstroms. A process for manufacturing this structure is also disclosed.
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: December 17, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Hui-Chuan Wang, Chyu-Jiuh Torng, Rong-Fu Xiao
  • Publication number: 20020094374
    Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
    Type: Application
    Filed: March 18, 2002
    Publication date: July 18, 2002
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Cherng-Chyi Han, Rong-Fu Xiao, Mao-Min Chen, Po-Kang Wang
  • Patent number: 6388847
    Abstract: A specular spin valve structure that is more robust than currently available specular spin valves is described. The improved stability is achieved by a using a modified pinned layer that is a laminate of three layers—a layer nickel-chromium, between about 3 and 4 Angstroms thick, sandwiched between two layers of cobalt-iron. A key requirement is that the cobalt-iron layer closest to the copper separation layer must be about twice as thick as the other cobalt-iron layer. A process for manufacturing this structure is also disclosed.
    Type: Grant
    Filed: February 1, 2000
    Date of Patent: May 14, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Rong-Fu Xiao
  • Patent number: 6383574
    Abstract: A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
    Type: Grant
    Filed: July 23, 1999
    Date of Patent: May 7, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Rong-Fu Xiao, Mao-Min Chen, Po-Kang Wang
  • Patent number: 5368681
    Abstract: A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.
    Type: Grant
    Filed: June 9, 1993
    Date of Patent: November 29, 1994
    Assignees: Hong Kong University of Science, Hong Kong University of Science and Technology, R and D Corporation Limited
    Inventors: Hiroyuki Hiraoka, Stefan A. Latsch, Rong-Fu Xiao