Abstract: A heat dissipation assembly is disclosed and includes a frame and a fan. The frame includes a heat conduction channel and an airflow intake. The heat conduction channel is communication with an exterior through airflow intake. The frame includes a first plane, a second plane and an inclined plane. The first plane is disposed adjacent to the airflow intake. The inclined plane is connected between the first plane and the second plane. The second plane includes an inlet. The heat conduction channel is in communication between the airflow intake and the inlet. A cross-section area of the heat conduction channel adjacent to the airflow intake is greater than that of the heat conduction channel adjacent to the inlet. The fan is spatially corresponding to the inlet, and assembled with the frame to form an outlet in communication with the airflow intake and the heat conduction channel through the inlet.

Abstract: The present invention provides methods and compositions for treating a lung or heart disease and/or a disease associated with increased expression or activity of integrin ?5?1, comprising administering an integrin ?5?1, inhibitor to a subject. Methods of treating or preventing pulmonary hypertension, pulmonary arterial hypertension (PAH), right ventricle failure, heart failure and fibrosis are also provided herein.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: Disclosed are small molecule antagonists of ?4?7 integrin, and methods of using them to treat a number of specific diseases or conditions.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.

Abstract: Disclosed are small molecule inhibitors of ?v?6 integrin, and methods of using them to treat a number of specific diseases or conditions.

Abstract: An impeller and a fan are provided. The impeller includes a hub, a plurality of first blades, a plurality of second blades and a connecting member. The plurality of first blades are disposed around the hub separately. Each first blade is connected with a periphery of the hub. The plurality of second blades are disposed around the hub separately. Each second blade is disposed away from the periphery of the hub and located between two adjacent first blades of the plurality of first blades. The connecting member is disposed around the hub and penetrated through the plurality of first blades and the plurality of second blades. The connecting member is not in contact with a first edge of any side of each first blade. The connecting member is not in contact with a second edge of any side of each second blade.

Abstract: A fan frame includes a housing, a shaft seat, a curved rib, a plurality of first ribs, and a plurality of second ribs. The shaft seat is disposed at the center of the housing. The curved rib is disposed between the housing and the shaft seat. The first ribs extend through the curved rib and connect the shaft seat to the housing, and the second ribs connect the curved rib to the shaft seat.

Abstract: Disclosed are small molecule inhibitors of ?v?6 integrin, and methods of using them to treat a number of diseases and conditions.

Abstract: A fan frame includes a housing, a shaft seat, a curved rib, a plurality of first ribs, and a plurality of second ribs. The shaft seat is disposed at the center of the housing. The curved rib is disposed between the housing and the shaft seat. The first ribs extend through the curved rib and connect the shaft seat to the housing, and the second ribs connect the curved rib to the shaft seat.

Abstract: Described herein is a multi-level power convertor and a method for a multi-level power convertor. The multi-level power convertor includes a DC port; an AC port; a first power converting unit, a second power converting unit, a coupling inductor, and an inductive filtering unit. The first power converting unit is coupled to the DC port and includes a first AC terminal adapted to provide a first plurality of voltage levels. The second power converting unit is coupled to the DC port and includes a second AC terminal adapted to provide a second plurality of voltage levels, where the second plurality of voltage levels are phase-shifted by 90 degrees with respect to the first plurality of voltage levels. The coupling inductor includes first and second windings with a same number of turns. The inductive filtering unit is arranged between the AC port and ends of the first and second windings.

Abstract: A multi-level power convertor is provided. The multi-level power convertor includes a DC port, an AC port, a first power converting unit coupled to the DC port and including a first AC terminal adapted to provide a first plurality of voltage levels, a second power converting unit coupled to the DC port and including a second AC terminal adapted to provide a second plurality of voltage levels of the same number as the first plurality of voltage levels, a coupling inductor including first and second windings with the same number of turns, and an inductive filtering unit arranged between the AC port and the second and fourth ends of the first and second windings.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: Disclosed are small molecule inhibitors of ?v?6 integrin, and methods of using them to treat a number of diseases and conditions.

Abstract: The present invention provides a catalyst structure for oxidizing hydrogen in the air, comprising: a base and a catalyst layer, wherein the base comprises a first surface, the catalyst layer is disposed on the first surface of the base, and the catalyst layer comprises: a carbon carrier, multiple catalyst particles, and a fluorinated polymer; wherein the multiple catalyst particles are disposed on a surface of the carbon carrier, and the carbon carrier adheres to the first surface through the fluorinated polymer. The present invention further provides a device for oxidizing hydrogen, comprising: the catalyst structure and a shell, and the shell comprises an accommodation space, a first air flow part and a second air flow part in gas communication with each other; wherein the catalyst structure is disposed in the accommodation space and is between the first air flow part and the second air flow part.

Abstract: Disclosed are small molecule antagonists of ?4?7 integrin, and methods of using them to treat a number of specific diseases or conditions.

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.