Patents by Inventor Fu-Yang Yu
Fu-Yang Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6676801Abstract: A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.Type: GrantFiled: April 30, 2001Date of Patent: January 13, 2004Assignee: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Jung-Nan Tseng, Huang-Yi Lin, Fu-Yang Yu
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Patent number: 6648729Abstract: A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.Type: GrantFiled: June 14, 2002Date of Patent: November 18, 2003Assignee: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Cheng-Chi Hsieh, Jung-Nan Tseng, Huang-Yi Lin, Fu-Yang Yu
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Publication number: 20030022595Abstract: A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.Type: ApplicationFiled: June 14, 2002Publication date: January 30, 2003Inventors: Chien-Hsin Lai, Cheng-Chi Hsieh, Jung-Nan Tseng, Huang-Yi Lin, Fu-Yang Yu
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Publication number: 20020153347Abstract: A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.Type: ApplicationFiled: April 30, 2001Publication date: October 24, 2002Applicant: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Jung-Nan Tseng, Huang-Yi Lin, Fu-Yang Yu
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Patent number: 6352244Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.Type: GrantFiled: July 20, 2001Date of Patent: March 5, 2002Assignee: United Microelectronics, Corp.Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Peng-Yih Peng, Fu-Yang Yu
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Patent number: 6322057Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.Type: GrantFiled: May 22, 2000Date of Patent: November 27, 2001Assignee: United Microelectronics Corp.Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Peng-Yih Peng, Fu-Yang Yu
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Publication number: 20010042930Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.Type: ApplicationFiled: July 20, 2001Publication date: November 22, 2001Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Peng-Yih Peng, Fu-Yang Yu
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Patent number: 6307163Abstract: A chemical mixer tank calibrator and a calibrating method for the same. The chemical mixer tank calibrator calibrates the weight of the mixer tank through a step motor. Once the chemical in the mixer tank is used up, the mixer tank can be automatically filled with chemical. Thus, the chemical in the mixer tank can adequately supply the buffer tank and the machine at any given time.Type: GrantFiled: April 2, 1999Date of Patent: October 23, 2001Assignee: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Fu-Yang Yu
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Patent number: 6228420Abstract: A method to maintain a consistent thin film thickness deposited by chemical vapor deposition is described in which method a compensative coefficient K is provided. The initial preset deposition time T0 is multiplied by the compensative coefficient K to obtain an actual deposition time T, where T=K×T0. Using the actual deposition time T to conduct the deposition, the expected thickness of the thin film is obtained.Type: GrantFiled: October 20, 1999Date of Patent: May 8, 2001Assignee: United Microelectronics Corp.Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Hao-Kuang Chiu, Fu-Yang Yu
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Patent number: 6165255Abstract: A chemical-liquid controlling apparatus is described. The chemical-liquid controlling apparatus is mounted between a chemical-liquid container and an exhaust apparatus. During a chemical-liquid refilling process, once the chemical liquid is drawn out of the container by the exhaust apparatus, the chemical liquid first enters the chemical-liquid controlling apparatus. The chemical-liquid controlling apparatus separates the chemical liquid from a nitrogen gas and a chemical gas. In addition, the chemical-liquid refilling process is stopped by a signal transmitted from a leak sensor.Type: GrantFiled: March 12, 1999Date of Patent: December 26, 2000Assignee: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Peng-Yih Peng, Li-Min Chang, Fu-Yang Yu
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Patent number: 6129043Abstract: A gas tube with heating apparatus. The gas tube is applicable in a chemical vapor deposition machine. The gas comprises a gas circulating tube and a coaxial gas tube invaginating a gas transporting tube therein. A heater is installed in the gas circulating tube, while the coaxial tube is covered by a thermal insulating layer. In addition, a control valve, a pressure gauge, and a particle trap are installed in a gas supplying tube connecting with the gas circulating tube.Type: GrantFiled: February 25, 1999Date of Patent: October 10, 2000Assignee: United Microelectronics Corp.Inventors: Chien-Hsin Lai, Fu-Yang Yu
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Patent number: 6120366Abstract: The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.Type: GrantFiled: January 4, 1999Date of Patent: September 19, 2000Assignee: United Microelectronics Corp.Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Peng-Yih Peng, Edward Yang, Kun-Lin Wu, Fu-Yang Yu
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Patent number: 5604152Abstract: A novel process for depositing amorphous silicon has been described. The process features the homogeneous reaction of, decomposition of SiH2 and deposition of amorphous silicon, in a horizontal LPCVD reaction chamber. The SiH2 is produced by initially breaking down SiH4 in a heated autoclave apparatus, and then transferring the SiH2 to the LPCVD system through heated feed lines. This homogeneous process results in excellent thickness and resistivity uniformity for wafers placed along the horizontal axis of the LPCVD chamber.Type: GrantFiled: November 23, 1994Date of Patent: February 18, 1997Assignee: United Microelectronics CorporationInventors: Chao-Yang Chen, Fu-Yang Yu