Patents by Inventor Fu-Yen Jian

Fu-Yen Jian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ERASING METHOD FOR NONVOLATILE MEMORY
    Publication number: 20100322014
    Abstract: The present invention relates to an erasing method for nonvolatile memory, which uses forward bias between the source/drain region and body contact to inject majority carriers into the body, and then accelerates the majority carriers by an electric field between the body and the gate to energize the majority carriers to overcome the oxide barrier and to erase the nonvolatile memory.
    Type: Application
    Filed: July 6, 2009
    Publication date: December 23, 2010
    Applicant: ACER INCORPORATED
    Inventors: Ting-Chang Chang, Fu-Yen Jian, Hung-Wei Li
  • Method for programming a nonvolatile memory
    Patent number: 7835192
    Abstract: A method for programming a nonvolatile memory includes applying at least a voltage to a source or a drain, so as to inject carriers of the source or drain into a substrate; applying a third voltage to a gate or the substrate, so that the carriers which are in the substrate having enough energy can surmount an oxide layer to reach a charge storage device.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: November 16, 2010
    Assignee: Acer Incorporated
    Inventors: Ting-Chang Chang, Shih-Ching Chen, Fu-Yen Jian
  • NONVOLATILE MEMORY APPARATUS AND METHOD OF USING THIN FILM TRANSISTOR AS NONVOLATILE MEMORY
    Publication number: 20100254185
    Abstract: The present invention relates to a nonvolatile memory apparatus and a method of using a thin film transistor (TFT) as a nonvolatile memory by storing carriers in a body of the TFT, which operates a general TFT as a memory cell of a nonvolatile memory by manipulating the electrical characteristics of the TFT in order to integrate with other electrical components formed by TFTs, such as logic circuit or TFT-LCD pixel transistor, on the LCD panel without additional semiconductor manufacturing processes.
    Type: Application
    Filed: May 13, 2009
    Publication date: October 7, 2010
    Applicant: ACER INCORPORATED
    Inventors: Ting-Chang Chang, Fu-Yen Jian, Te-Chih Chen
  • Method for programming a nonvolatile memory
    Publication number: 20100034027
    Abstract: A method for programming a nonvolatile memory is provided. The method includes applying at least a voltage to a source or a drain, so as to inject carriers of the source or drain into a substrate; applying a third voltage to a gate or the substrate, so that the carriers which are in the substrate having enough energy can surmount an oxide layer to reach a charge storage device.
    Type: Application
    Filed: December 4, 2008
    Publication date: February 11, 2010
    Inventors: Ting-Chang Chang, Shih-Ching Chen, Fu-Yen Jian