Abstract: A method of forming a manufacture includes forming a trench in a doped layer; and forming a gate dielectric layer along sidewalls of an upper portion of the trench. The method further includes forming a first conductive feature along sidewalls of the gate dielectric layer, wherein the first conductive feature has a first depth in the trench. The method further includes forming an insulating layer covering the first conductive feature and the first insulating layer. The method further includes forming a second conductive feature along sidewalls of the second insulating layer, wherein the second conductive feature has a second depth in the trench different from the first depth.

Abstract: Some embodiments relate to an integrated circuit (IC) including one or more finFET devices. A finFET includes a fin of semiconductor material extending upwards from a semiconductor substrate. First and second source/drain regions, which have a first doping type, are spaced apart laterally from one another in the fin. A channel region is disposed in the fin and physically separates the first and second source/drain regions from one another. The channel region has a second doping type opposite the first doping type. A conductive gate electrode straddles the fin about the channel region and is separated from the channel region by a gate dielectric. A shallow doped region, which has the first doping type, is disposed near a surface of the fin around upper and sidewall fin regions. The shallow doped region extends continuously under the gate electrode between outer edges of the gate electrode.

Abstract: A waterproof housing without any screwing structure includes a top waterproof module, a waterproof gasket disposed on the top waterproof module, and a bottom waterproof module detachably combined with the top waterproof module. The top waterproof module has a top case, a transparent plate, and a resilient film. The top case has a touch-control window and a fingerprint hole, the transparent plate is fixed on the inner surface of the top case and entirely shields the touch-control window, and the resilient film is fixed between the inner surface of the top case and the transparent plate to shield the fingerprint hole. When a smart phone is received in the waterproof housing, the resilient film can be pressed to trigger the fingerprint function of the smart phone. The top and bottom waterproof modules are combined with each other to compress the waterproof gasket.

Abstract: A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.

Abstract: The present disclosure provides an FET structure including a substrate of a first conductive type having a top surface, a first gate over the top surface, a source and a drain of a second conductive type in the substrate, and a first channel under the first gate. A dopant concentration of a first conductive type includes double Gaussian peaks measured less than 200 nm beneath the top surface, from one end of the first gate to the other end of the first gate along the first channel. In some embodiments, the FET structure further including a second gate over the top surface and a second channel under the second gate. A dopant concentration of a first conductive type includes a single Gaussian peak measured less than 200 nm beneath the top surface, from one end of the second gate to the other end of the second gate along the second channel.

Abstract: The present invention relates to a control method of an RF switch module. The RF switch module comprises a control device and a switch device. The control device is electrically connected to the switch device, and the control device is able to provide a control voltage to the switch device, and turn on or turn off the switch device. Further, the control device determines frequency or voltage value of the control voltage provided to the switch device according to the power or frequency of an RF signal transmitted by the switch device.

Abstract: A FinFET device includes a dielectric layer formed over a semiconductor substrate and having an upper dielectric layer surface. A fin of semiconductor material extends upwards from the substrate through an opening in the dielectric layer. A base portion of the fin, which is recessed below the upper dielectric layer surface, includes a base channel region that separates first and second base source/drain regions. An upper channel region extends upwards from the base channel region and terminates in an upper fin surface disposed above the upper dielectric layer surface. A gate electrode straddles the upper channel region and is separated from the upper channel region by a gate dielectric. First and second epitaxial source/drain regions meet the first and second base source/drain regions, respectively, at first and second interfaces, respectively. The first and second interfaces are recessed in the opening and arranged below the upper dielectric layer surface.

Abstract: A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second conductivity type opposite to the first conductivity type. The triple well isolated diode includes an epi-layer over the substrate and the buried layer. A portion of the epi-layer having the first conductivity type contacts the buried layer. The triple well isolated diode includes a first well, a second well, a third well and a deep well in the epi-layer. The first well and the third well have the second conductivity type. The second well and the deep well have the first conductivity type. The second well surrounds sides of the first well. The third well surrounds sides of the second well. The deep well extends beneath the first well to electrically connect to the second well on opposite sides of the first well.

Abstract: A control system for detecting air wave is provided and applied to an electronic device. The control system for detecting air wave includes a detecting module, at least one first application and a service module. The detecting module is configured to detect an air wave and transform the air wave into an electronic signal. The service module includes a service scheduling module and a decoding module. The service scheduling module controls the detecting module to obtain the electronic signal. The decoding module decodes the electronic signal to a digital content. The digital content is transmitted to the corresponding first application.

Abstract: A novel MOS transistor, which includes a source region, a drain region, a channel region, an isolation region, a drift region, a gate dielectric layer, a gate electrode and a field plate, is provided. The gate electrode has a first portion and a second portion. The first portion of a first conductivity type is located over the channel region and has a width equal to or greater than a distance of the gate electrode overlapped with the channel region. The second portion is un-doped and located over the isolation region. Accordingly, the MOS transistor allows higher process freedom saves production cost, as well as improves reliability.

Abstract: A novel MOS transistor including a well region, a gate dielectric layer, a gate electrode, a source region and a drain region is provided. The well region of a first conductivity type extends into a semiconductor substrate. The gate dielectric layer is located over the well region. The gate electrode is located over the gate dielectric layer. The source region of a second conductivity type opposite to the first conductivity type and a drain region of the second conductivity type are located in the well region and on opposite sides of the gate electrode. The gate dielectric layer has a first portion and a second portion respectively closest to the source region and the drain region. The thickness of the second portion is greater than that of the first portion, so as to raise breakdown voltage and to maintain current simultaneously.

Abstract: A conductive assembly for changing a color of a lens is revealed herein to comprise first and second conductive devices separately disposed at an upper front and lower rear end faces of an electrochromic lens, and an electrical connection device connected with the first and second conductive devices. The first conductive device has a first indium tin oxide (ITO) conductive part on a surface of the electrochromic lens and a conductive part on the first ITO conductive part for connection to the electrical connection device. The second conductive device has a second indium tin oxide (ITO) conductive part on a surface of the electrochromic lens, an inner conductive part on the second ITO conductive part, an insulating part on the inner conductive part and an outer conductive part on the insulating part for connection to the inner conductive part and the electrical connection device.

Abstract: Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift region formed at a side of a gate electrode, and a second drift region beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region so that the first drift region and the second drift region together form a stepwise shape. A sum of a depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode may be of substantially a same value as a depth of the first drift region. The first drift region and the second drift region may be formed at the same time, using the gate electrode as a part of the implanting mask.

Abstract: A touch device comprises a touch sensing structure, a cover lens, a first mask layer, a second mask layer and a fingerprint identification structure. The cover lens has a first surface and a second surface opposite to the first surface. The cover lens has a groove; the groove is disposed on the second surface and has a top surface and side surfaces adjacent to the top surface. The first mask layer covers the top surface of the groove. The second mask surface covers the side surface of the groove. The color of the first mask layer and the second mask layer are different. At least a portion of the fingerprint identification structure is disposed on the top surface in the groove. The touch sensing structure is disposed on the second surface.

Abstract: A touch control device includes a cover lens, a groove, a fingerprint, and a touch sensing structure. The cover lens has a first surface and a second surface opposite to the first surface, in which the first surface is a touch surface. The groove is disposed on the second surface and has a top surface and a side surface adjacent to the top surface, in which an angle between the top surface and the side surface is greater than 90°. The fingerprint recognition structure is at least partially disposed on the top surface of the groove. The touch sensing structure is disposed on the second surface.

Abstract: A triple well isolate diode including a substrate having a first conductivity type and a buried layer formed in the substrate, where the buried layer has a second conductivity type. The triple well isolated diode including an epi-layer formed over the substrate and the buried layer, where the epi-layer has the first conductivity type. The triple well isolated diode including a first well formed in the epi-layer, where the first well has the second conductivity type, a second well formed in the epi-layer, where the second well has the first conductivity type and surrounds the first well, a third well formed in the epi-layer, where the third well has the second conductivity type and surrounds the second well. The triple well isolated diode including a deep well formed in the epi-layer, where the deep well has the first conductivity type and extends beneath the first well.

Abstract: A back light module is provided. The back light module includes a first light emitting module, a second light emitting module and an attenuator. The first light emitting module has a light output surface. The second light emitting module is disposed on one side of the first light emitting module opposite to the light output surface. The attenuator is disposed between the first light emitting module and the second light emitting module, and includes a first polarizer having a first absorption axis.

Abstract: Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift region formed at a side of a gate electrode, and a second drift region beneath the gate electrode, adjacent to the first drift region, with a depth less than a depth of the first drift region so that the first drift region and the second drift region together form a stepwise shape. A sum of a depth of the second drift region, a depth of the gate dielectric, and a depth of the gate electrode may be of substantially a same value as a depth of the first drift region. The first drift region and the second drift region may be formed at the same time, using the gate electrode as a part of the implanting mask.

Abstract: A display system and an operation method thereof are provided. The head-mounted display (HMD) device of the display system includes a camera, a monitor, a communication circuit and a processor. The processor is coupled to the monitor, the camera and the communication circuit. The processor receives and processes sensing data provided by a motion sensor of the display system through the communication circuit, so as to obtain a motion trajectory of the user. The camera photographs a person in a view field of the user. The processor performs image recognition to the video data provided by the camera, so as to obtain a motion trajectory of the person. The processor controls the monitor to display the motion trajectory of the user or the motion trajectory of the person.

Abstract: A container has a main body and an easily-detached lid. The main body has an opening, and a main body engaging element is disposed around the edge of the opening. The lid has a lid engaging element corresponding to the main body engaging element for allowing the lid to engage with the main body via the main body engaging element and the lid engaging element. A wall is disposed at the outer boundary of the lid, and the wall has at least one tilting portion.