Abstract: The embodiments of the disclosure provide a thin film transistor device and a manufacturing method thereof, a composite etching solution, and an array substrate, the method includes: forming an active structure material layer including an active material layer and an ohmic contact material layer, and a source/drain material layer on a base substrate; performing a wet etching process on the source/drain material layer and the active structure material layer using a composite etching solution including a first etching solution and a second etching solution, so as to form a source/drain electrode layer and an active structure including an active layer and an ohmic contact layer, wherein the wet etching process includes: etching the source/drain material layer and oxidizing a portion of the active structure material layer, and etching an oxidized portion of the active structure material layer.

Abstract: The present invention provides a method for manufacturing an array substrate, wherein each data line in a plurality of data line groups forms an integral structure with a first shorting bar, and after etching a source-drain component to form a source electrode and a drain electrode, the data line groups which do not correspond to the first shorting bar is disconnected from the first shorting bar. By adopting the method provided by the present invention, electrostatic breakdown in the manufacturing process of the array substrate can be reduced.

Abstract: The present invention provides a method for manufacturing an array substrate, wherein each data line in a plurality of data line groups forms an integral structure with a first shorting bar, and after etching a source-drain component to form a source electrode and a drain electrode, the data line groups which do not correspond to the first shorting bar is disconnected from the first shorting bar. By adopting the method provided by the present invention, electrostatic breakdown in the manufacturing process of the array substrate can be reduced.