Abstract: The present invention belongs to the field of radio frequency integrated circuit technology, and specifically relates to a transformer-based distributed multicore oscillator and an integrated circuit and a terminal thereof. The oscillator includes four MOS transistors M1˜M4, two transformers T1 and T2, two coarse capacitors arrays CG1 and CG2, two fine capacitors arrays CD1 and CD2, two tail inductances Ltail1 and Ltail2. A first cross-coupled transistors pair is constisted by two MOS transistors M1 and M2, and a second cross-coupled transistors pair is constisted by two MOS transistors M3 and M4. Two pair are adjacent and are set in centre of the layout. Two signal output ports are defined by two drain regions of any two MOS transistors from the two pairs. The present invention synchronously solves the problem of high thermal phase noise and low-frequency flicker phase noise in existing oscillators.

Abstract: The present invention belongs to the field of radio frequency integrated circuit technology, and specifically relates to a transformer-based distributed multicore oscillator and an integrated circuit and a terminal thereof. The oscillator includes four MOS transistors M1˜M4, two transformers T1 and T2, two coarse capacitors arrays CG1 and CG2, two fine capacitors arrays CD1 and CD2, two tail inductances Ltail1 and Ltail2. A first cross-coupled transistors pair is consisted by two MOS transistors M1 and M2, and a second cross-coupled transistors pair is consisted by two MOS transistors M3 and M4. Two pair are adjacent and are set in centre of the layout. Two signal output ports are defined by two drain regions of any two MOS transistors from the two pairs. The present invention synchronously solves the problem of high thermal phase noise and low-frequency flicker phase noise in existing oscillators.

Abstract: A high-speed high-current laser driver integrated circuit is invented. The laser driver includes an input stage circuit, a pre-drive circuit, a negative capacitance circuit, three parallel-connected output stages, and an active reverse termination circuit. A pair of voltage signals VIP, VIN are applied to the input stage circuit which amplifies these input signals to a pair of output voltage signals V1IP, V1IN. Then the voltage signals V1IP, V1IN are amplified by the pre-drive circuit to a pair of voltage signals V+, V? to the output stage circuit, and finally, a pair of modulated current signals IOP, ION are generated by the output stage circuit. The present invention does not use terminal resistance in the output stage circuit, so the power consumption of the circuit is much lower than that of the traditional circuit.

Abstract: A laser driver with high-speed and high-current and current modulating method thereof is invented. The laser driver includes a first driving unit and a second driving unit, each driving unit including a pre-drive amplifier circuit and a main drive amplifier circuit. The pre-drive amplifier circuit includes a first differential transistor pair circuit, a differential voltage conversion circuit, a DC common mode level reduction circuit and a first cascode current mirror circuit. The main drive amplifier circuit includes a second differential transistor pair circuit, a bandwidth boost circuit, a matching circuit and a second cascode current mirror circuit. The present invention avoids the enhancement of chip area caused by the use of passive inductors peaking mode to enhance bandwidth, and reduces the cost of chip, design complexity and circuit power consumption.

Abstract: A high-speed high-current laser driver integrated circuit is invented. The laser driver includes an input stage circuit, a pre-drive circuit, a negative capacitance circuit, three parallel-connected output stages, and an active reverse termination circuit. A pair of voltage signals VIP, VIN are applied to the input stage circuit which amplifies these input signals to a pair of output voltage signals VIIP, VIIN. Then the voltage signals VIIP, VIIN are amplified by the pre-drive circuit to a pair of voltage signals V+, V? to the output stage circuit, and finally, a pair of modulated current signals IOP, ION are generated by the output stage circuit. The present invention does not use terminal resistance in the output stage circuit, so the power consumption of the circuit is much lower than that of the traditional circuit.

Abstract: A laser driver with high-speed and high-current and current modulating method thereof is invented. The laser driver includes a first driving unit and a second driving unit, each driving unit including a pre-drive amplifier circuit and a main drive amplifier circuit. The pre-drive amplifier circuit includes a first differential transistor pair circuit, a differential voltage conversion circuit, a DC common mode level reduction circuit and a first cascode current mirror circuit. The main drive amplifier circuit includes a second differential transistor pair circuit, a bandwidth boost circuit, a matching circuit and a second cascode current mirror circuit. The present invention avoids the enhancement of chip area caused by the use of passive inductors peaking mode to enhance bandwidth, and reduces the cost of chip, design complexity and circuit power consumption.

Abstract: The present disclosure provides a millimeter-wave waveguide communication system. The millimeter-wave waveguide communication system may comprise: a clock component, and at least two sets of millimeter-wave receiving/transmitting channels. The clock component is configured to provide a clock signal to sending ends and receiving ends of the two sets of millimeter-wave receiving/sending channels respectively. Each set of millimeter-wave receiving/sending channels comprises: a transmitter component, a receiver component and a transmission waveguide. The transmission waveguide is located between the transmitter component and the receiver component and is configured to provide a channel for millimeter-wave transmission. The top face, side face and/or bottom face of the transmission waveguide, except for active devices and accessories thereof, are plated with a metal conductive wall to form an electromagnetic shield from a transmission waveguide in an adjacent millimeter-wave receiving/sending channel.

Abstract: Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.

Abstract: A differential phase splitter circuit for producing opposite phase signals from an input AC signal is provided. A first and second transistor is provided. The source of these transistors are connected to a common first node. Further, these transistors act as a differential amplifier. The gate of the first transistor receives an input AC signal. The drain of the first transistor produces a first output AC signal. Similarly, the drain of the second transistor produces a second output AC signal that is 180 degrees out of phase with the first output AC signal. A source resistor is provided, connected in series to the common first node and ground. Lastly, an LCR feedback circuit is provided. This feedback circuit is connected between the drain of the first transistor and the gate of the second transistor. The LCR feedback circuit couples at least a fraction of the amplitude of the first output AC signal to the gate of the second transistor for amplitude balancing and phase balancing.