Patents by Inventor Fujihira Mitsuaki

Fujihira Mitsuaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a mask pattern for the production of transistor
    Patent number: 4981809
    Abstract: A method of making a fine mask pattern suitable for making a compound semiconductor device in which a source and drain regions are formed on both sides of a groove defined in a substrate and both regions are separated from the side walls of the groove by predetermined intervals through a first region with a depth shallower than the groove. A second region is formed between the source and drain region with a depth deeper than said groove. A gate electrode is formed on the surface of the second region in the groove for Schottky contacting with the upper surface of the second region.
    Type: Grant
    Filed: August 10, 1988
    Date of Patent: January 1, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Fujihira Mitsuaki, Masanori Nishiguchi