Abstract: A light irradiation apparatus (31) includes a light source unit (40) and an irradiation optical system (5). In the light source unit, light source parts (4) arrayed in a plane emit laser light toward the irradiation optical system from different directions along the plane, and by the irradiation optical system, the laser light is guided along an optical axis (J1) to an irradiation plane (320). The irradiation optical system includes a division lens part (62), an optical path length difference generation part (61), and a condensing lens part (63). The division lens part includes element lenses (620) that divide light incident from the light source parts. The optical path length difference generation part includes transparent parts (610) having different optical path lengths from each other, and light that has passed through the element lenses respectively enters the transparent parts.

Abstract: A light irradiation apparatus (31) includes a light source unit (40) and an irradiation optical system (5). In the light source unit, light source parts (4) arrayed in a plane emit laser light toward the irradiation optical system from different directions along the plane, and by the irradiation optical system, the laser light is guided along an optical axis (J1) to an irradiation plane (320). The irradiation optical system includes a division lens part (62), an optical path length difference generation part (61), and a condensing lens part (63). The division lens part includes element lenses (620) that divide light incident from the light source parts. The optical path length difference generation part includes transparent parts (610) having different optical path lengths from each other, and light that has passed through the element lenses respectively enters the transparent parts.

Abstract: A film thickness measurement apparatus (1) comprises an ellipsometer (3) for acquiring a polarization state of a film on a substrate (9) and a light interference unit (4) for acquiring spectral intensity of the film on the substrate (9). In an optical system (45) of the light interference unit (4), a light shielding pattern (453a) is disposed in an aperture stop part (453), and an illumination light from a light source (41) is emitted to the substrate (9) through the optical system (45). A reflected light from the substrate (9) is guided to a light shielding pattern imaging part (43), where an image of the light shielding pattern (453a) is acquired. When the ellipsometer (3) performs a film thickness measurement, a tilt angle of the substrate (9) is obtained on the basis of the image of the light shielding pattern (453a) and a light receiving unit (32) acquires a polarization state of the reflected light.

Abstract: A film forming apparatus (1) comprises a stage (2) for supporting a substrate (9), a light emitting part (3) for guiding polarized light used for forming an oxide film on the substrate (9) by light energy to a predetermined irradiation region on the substrate (9), a light receiving part (4) for receiving the polarized light reflected on the irradiation region and a calculation part (61) for obtaining a thickness of the film in the irradiation region on the basis of an output from the light receiving part (4). In the film forming apparatus (1), the light emitting part (3) and the light receiving part (4) constitute part of an ellipsometer, and the light emitting part (3) emits a light beam to form a film in the irradiation region on the substrate (9) while the light receiving part (4) acquires the polarization state of the reflected light from the substrate (9) and the calculation part (61) analyzes it to measure the thickness of the film. It is thereby possible to improve the accuracy of film thickness.

Abstract: A film thickness measurement apparatus (1) comprises an ellipsometer (3) for acquiring a polarization state of a film on a substrate (9) and a light interference unit (4) for acquiring spectral intensity of the film on the substrate (9). In an optical system (45) of the light interference unit (4), a light shielding pattern (453a) is disposed in an aperture stop part (453), and an illumination light from a light source (41) is emitted to the substrate (9) through the optical system (45). A reflected light from the substrate (9) is guided to a light shielding pattern imaging part (43), where an image of the light shielding pattern (453a) is acquired. When the ellipsometer (3) performs a film thickness measurement, a tilt angle of the substrate (9) is obtained on the basis of the image of the light shielding pattern (453a) and a light receiving unit (32) acquires a polarization state of the reflected light.