Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: A vacuum chamber includes a plasma generating space in its interior. A magnetic field generating device applies a fluctuating magnetic field to the plasma generating space to cause plasma therein to fluctuate. A substrate is placed in the plasma generating space so that when a potential difference is evoked between a first conductor and a second conductor as a result of the fluctuation of the plasma, the potential difference causes nanoholes to be formed in the substrate.

Abstract: Provided are a thin film coil formed at high densities, a method of forming a thin film coil, a thin film magnetic head which includes the thin film coil and thus enables ensuring stable recording characteristics while coping with a higher recording density, and a method of manufacturing a thin film magnetic head. The thin film coil includes a first coil having a top surface having the maximum width, an insulating wall formed by selectively etching an insulating layer filling a region between windings by using the first coil as a mask, and a second coil isolated from the first coil by the insulating wall. This easily enables forming the thin film coil in a narrower space, while ensuring electrical insulation between the windings of the first and second coils.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed.

Abstract: A vacuum chamber 1 has a plasma generating space 11 in its interior. A magnetic field generating means 4 applies a fluctuating magnetic field to the plasma generating space 11 to cause plasma there to fluctuate. A substrate 6 is placed in the plasma generating space 11 so that when a potential difference is evoked between a first conductor 61 and a second conductor 62 as a result of the fluctuation of plasma, the potential difference can cause nanoholes to be formed in the substrate 6.

Abstract: Provided are a thin film coil formed at high densities, a method of forming a thin film coil, a thin film magnetic head which includes the thin film coil and thus enables ensuring stable recording characteristics while coping with a higher recording density, and a method of manufacturing a thin film magnetic head. The thin film coil includes a first coil having a top surface having the maximum width, an insulating wall formed by selectively etching an insulating layer filling a region between windings by using the first coil as a mask, and a second coil isolated from the first coil by the insulating wall. This easily enables forming the thin film coil in a narrower space, while ensuring electrical insulation between the windings of the first and second coils.

Abstract: Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed.

Abstract: On a wafer-like substrate 1, there are formed a number of thin film magnetic head elements in matrix, each of which is formed to include a first shield film 3 formed on the wafer-like substrate 1, a first insulating film 71 formed on the first shield film, a magnetoresistive element 9 and first and second electrode films 11, 13 connected to respective ends of the magnetoresistive element formed on the first insulating film, a second shield film 5 formed to cover the magnetoresistive element and first and second electrode films 11, 13, a second insulating film 72 formed on the second shield film, and a conductive film 191 electrically connected to the first electrode film 11 and second shield film 5 and having a middle portion which is separated from a side edge of the second shield film 5 by a distance &Dgr;G2 viewed in a film stacking direction.

Abstract: A gas at an extremely low temperature is jet-sprayed onto a warped concave surface of a wafer to correct this warped concave surface flat.

Abstract: A first insulating film is provided on a first shielding film. A magnetoresistive effective element is provided on the first insulating film. A first and a second leading conductor films are provided on the first insulating film and connected to both ends of the magnetoresistive effective element. A second insulating film covers the first and second leading conductor films and the magnetoresistive effective element, and a second shielding film is provided on the second insulating film. A terminal conductor for measurement is conductively connected to at least one of the first and the second shielding films, and exposed to a different surface of a slider from a medium opposing surface thereof.

Abstract: A gas at an extremely low temperature is jet-sprayed onto a warped concave surface of a wafer to correct this warped concave surface flat.

Abstract: This invention relates to a polishing method for polishing a surface of a material to be polished and a fabrication method of a thin film magnetic head having a planarization process for planarizing the surface of the material to be polished by polishing, and an object thereof is to reduce variations of a residual film thickness on the surface of a material to be polished after polishing. An insulating film 14 is formed on an AlTiC substrate 12 and a bottom shielding layer 16 is formed thereover. After forming a coating layer 18 and etching a mask layer 22 as an etching mask, a protruding portion of the coating layer 18 at the bottom of the opening of the mask layer 22 is removed by a desired thickness. Since a protruding portion of the coating layer 18 on the periphery of the opening of the mask layer is suitably undercut, the protruding portion is shaved, thereby obtaining the coating layer 18 which is planarized as a whole.

Abstract: After applying a metal film on a surface of a substrate, the metal film is patterned in such a manner that the surface of the substrate is exposed in a pattern that corresponds to the pattern of the required indented portion. Then, the substrate is immersed in an etchant which etches the substrate selectively to form the indented portion in the surface of the substrate using the metal film as a mask.The method makes it possible to define the depth and the pattern of an indented portion where a magnetic transducer is provided with a high degree of accuracy, to prevent a reduction in pattern accuracy due to re-adhering and to advance industrial productivity.

Abstract: A thin film magnetic head comprises a substrate, and magnetic films and a conductive coil which are formed on the substrate to constitute a thin film magnetic circuit, wherein the conductive coil has a shape in cross section so that its upper part has a curved convex surface.