Abstract: A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C.

Abstract: A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out the substrate, the substrate being ashing processed so that a temperature of the substrate is equal to or less than 130° C.

Abstract: On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.

Abstract: On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.

Abstract: To prevent after-corrosion of wiring or electrodes formed by patterning films of aluminum or an alloy thereof by reactive ion etching (RIE) using an etchant containing chlorine gas or its gaseous compounds, residual chlorine on the surface of the wiring or electrodes is removed by exposing it to a plasma generated in an atmosphere containing water vapor or to neutral active species extracted from the plasma. This treatment is performed either at the same time or after an ashing operation, an operation for removing a resist mask used in the aforesaid RIE by adding water vapor to an atmosphere containing oxygen. To perform the latter separate treatment, an automatic processing system is disclosed in which an after-treatment apparatus for removing residual chlorine is connected, via a second load lock chamber, to an ashing apparatus connected to a RIE apparatus by a load lock chamber which is capable of making a vacuum.