Abstract: A method of manufacturing monocrystalline silicon is provided, the method including pulling monocrystalline silicon out of a silicon melt by a Czochralski process, the silicon melt being stored in a crucible housed in a chamber, the silicon melt being added with a volatile dopant, in which a decompression rate ES for exhaust of a gas out of the chamber before the pulling of the monocrystalline silicon is within a range below at least until a pressure inside the chamber decreases from an atmospheric pressure to 80 kPa, 0 kPa/min<ES?4.2 kPa/min.

Abstract: A method for producing an n-type monocrystalline silicon that includes pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon. The monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 m?cm to 2.0 m?cm, and is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 m?cm to 1.0 m?cm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: A deposit removing device disclosed herein removes a deposit that adheres to an exhaust pipe through which gas is exhausted from a chamber that manufactures a semiconductor crystal. The deposit removing device includes: a valve that opens and closes an exhaust outlet that communicates with the exhaust pipe; a sealing cover and a fixed table configured to store the valve, into which an inert gas is introduceable, and configured to isolate the exhaust outlet from the outside; and an exhaust outlet opening/closing portion that includes a cylinder for driving the valve and a cylinder for driving the sealing cover or the fixed table. The cylinder drives the valve to open and close the exhaust outlet, and the cylinder drives the sealing cover or the fixed table to introduce the atmosphere into the sealing cover.

Abstract: A deposit removing device disclosed herein removes a deposit that adheres to an exhaust pipe through which gas is exhausted from a chamber that manufactures a semiconductor crystal. The deposit removing device includes: a valve that opens and closes an exhaust outlet that communicates with the exhaust pipe; a sealing cover and a fixed table configured to store the valve, into which an inert gas is introduceable, and configured to isolate the exhaust outlet from the outside; and an exhaust outlet opening/closing portion that includes a cylinder for driving the valve and a cylinder for driving the sealing cover or the fixed table. The cylinder drives the valve to open and close the exhaust outlet, and the cylinder drives the sealing cover or the fixed table to introduce the atmosphere into the sealing cover.

Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.

Abstract: A silicon single crystal production method includes pulling up and growing a silicon single crystal from silicon melt containing red phosphorus as a dopant by Czochralski process. The silicon single crystal is intended for a 200-mm-diameter wafer. The silicon single crystal includes a straight body with a diameter in a range from 201 mm to 230 mm. The straight body includes a straight-body start portion with an electrical resistivity in a range from 0.8 m?cm to 1.2 m?cm. A crystal rotation speed of the silicon single crystal is controlled to fall within a range from 17 rpm to 40 rpm for at least part of a shoulder-formation step for the silicon single crystal.

Abstract: A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.

Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.

Abstract: In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 m?cm to 1.0 m?cm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: A production method of a monocrystalline silicon includes adding red phosphorus in a silicon melt so that an electrical resistivity of the monocrystalline silicon falls in a range of 0.5 m?·cm or more and less than 0.7 m?·cm; and pulling up the monocrystalline silicon so that a time for a temperature of at least a part of a straight body of the monocrystalline silicon to be within a range of 570 degrees C. 70 degrees C. is in a range from 10 minutes to 50 minutes.

Abstract: A silicon single crystal production method includes pulling up and growing a silicon single crystal from silicon melt containing red phosphorus as a dopant by Czochralski process. The silicon single crystal is intended for a 200-mm-diameter wafer. The silicon single crystal includes a straight body with a diameter in a range from 201 mm to 230 mm. The straight body includes a straight-body start portion with an electrical resistivity in a range from 0.8 m?cm to 1.2 m?cm. A crystal rotation speed of the silicon single crystal is controlled to fall within a range from 17 rpm to 40 rpm for at least part of a shoulder-formation step for the silicon single crystal.

Abstract: A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.

Abstract: The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition.

Abstract: A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 m?·cm to 0.9 m?·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.

Abstract: A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 ?m or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body. The remelt growth area has the growth striation with the interrupted outer end.

Abstract: A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 ?m or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body. The remelt growth area has the growth striation with the interrupted outer end.

Abstract: A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 m?·cm to 0.9 m?·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.

Abstract: A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8?r?t/4.

Abstract: A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot includes withdrawing a silicon seed crystal from a silicon melt to grow a silicon single crystal, with the silicon seed crystal and the silicon melt containing dopants of the same kind. The process includes the dipping step of dipping a silicon seed crystal containing a dopant in a specific concentration in a silicon melt in such a manner that the temperature difference between both falls within the range of 50 to 97K, and the growing step of growing a silicon single crystal withdrawn after the dipping to form a silicon ingot, the growing step being conducted by using a single crystal puller provided with a thermal shield plate for shielding against radiant heat emitted from the silicon melt and controlling the distance between the thermal shield plate and the silicon melt within a specific range.