Patents by Inventor Fukuo Oowada

Fukuo Oowada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device and a method of manufacturing the same
    Patent number: 7611942
    Abstract: A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.
    Type: Grant
    Filed: August 15, 2005
    Date of Patent: November 3, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Shinichi Minami, Fukuo Oowada, Xiaudong Fang
  • Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfet
    Patent number: 7011999
    Abstract: A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: March 14, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Shinichi Minami, Fukuo Oowada, Xiaudong Fang
  • Semiconductor integrated circuit device and a method of manufacturing the same
    Publication number: 20050269663
    Abstract: A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.
    Type: Application
    Filed: August 15, 2005
    Publication date: December 8, 2005
    Inventors: Shinichi Minami, Fukuo Oowada, Xiaudong Fang
  • Semiconductor integrated circuit device and a method of manufacturing the same
    Publication number: 20040124477
    Abstract: A semiconductor integrated circuit device having a capacitor element including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode via a dielectric film interposed therebetween, has oxidation resistant films between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 1, 2004
    Inventors: Shinichi Minami, Fukuo Oowada, Xiaudong Fang