Patents by Inventor Fulong Li

Fulong Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250057832
    Abstract: The present invention relates to the use of a class of 1,4-dihydro-naphthyridine derivatives in the treatment of tumors.
    Type: Application
    Filed: November 21, 2022
    Publication date: February 20, 2025
    Applicant: NEURODAWN PHARMACEUTICAL CO., LTD.
    Inventors: Zhengping ZHANG, Fulong LI, Lei WANG, Rong CHEN, Weidong YANG, Fang FANG, Wenji AN, Yao HUA, Lin FENG
  • Publication number: 20240335407
    Abstract: The present invention relates to a composition of (S)-3-aminomethyl-5-methylhexanoic acid or a pharmaceutically acceptable salt thereof, and riluzole. The composition has broad application prospects in the manufacture of a medicament for treating neuropathic pain.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 10, 2024
    Applicant: NEURODAWN PHARMACEUTICAL CO., LTD.
    Inventors: Fulong LI, Zhengping ZHANG, Fang FANG, Weidong YANG, Rong CHEN, Shibao YANG
  • Publication number: 20240290908
    Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.
    Type: Application
    Filed: April 3, 2024
    Publication date: August 29, 2024
    Inventors: ChingYuan TSAI, Chun-Yi WU, Fulong LI, Duxiang WANG, Chaoyu WU, Wenhao GAO, Xiaofeng LIU, Weihuan LI, Liming SHU, Chao LIU
  • Patent number: 11973163
    Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.
    Type: Grant
    Filed: January 20, 2023
    Date of Patent: April 30, 2024
    Assignee: Tianjin Sanan Optoelectronics Co., Ltd.
    Inventors: ChingYuan Tsai, Chun-Yi Wu, Fulong Li, Duxiang Wang, Chaoyu Wu, Wenhao Gao, Xiaofeng Liu, Weihuan Li, Liming Shu, Chao Liu
  • Publication number: 20230187574
    Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.
    Type: Application
    Filed: January 20, 2023
    Publication date: June 15, 2023
    Inventors: ChingYuan TSAI, Chun-Yi WU, Fulong LI, Duxiang WANG, Chaoyu WU, Wenhao GAO, Xiaofeng LIU, Weihuan LI, Liming SHU, Chao LIU
  • Patent number: 11563140
    Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: January 24, 2023
    Assignee: Tiajin Sanan Optoelectornics Co., Ltd.
    Inventors: ChingYuan Tsai, Chun-Yi Wu, Fulong Li, Duxiang Wang, Chaoyu Wu, Wenhao Gao, Xiaofeng LiU, Weihuan Li, Liming Shu, Chao Liu
  • Publication number: 20210050475
    Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.
    Type: Application
    Filed: October 29, 2020
    Publication date: February 18, 2021
    Inventors: ChingYuan TSAI, Chun-YI Wu, Fulong Li, Duxiang WANG, Chaoyu Wu, Wenhao GAO, Xiaofeng LIU, Weihuan LI, Liming SHU, Chao LIU
  • Patent number: 9284330
    Abstract: Disclosed are 1,4-dihydro-naphthyridine derivatives and pharmaceutical composition and uses thereof. The 1,4-dihydro-naphthyridine derivatives are a compound capable of inhibiting acetylcholinesterase activity and preventing extracellular calcium from flowing into a cell via a calcium channel, i.e., having a dual-activity, which are of potential importance as a pharmaceutical and can be used to prepare the drugs for treating cardiovascular diseases, cerebrovascular diseases and dementia.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: March 15, 2016
    Assignee: Jiangsu Simovay Pharmaceutical Co., Ltd.
    Inventors: Rong Chen, Lin Feng, Zhengping Zhang, Fang Fang, Qingli Dong, Fulong Li, Lei Wang, Yao Hua, Shibao Yang, Peng Wang
  • Publication number: 20140364443
    Abstract: Disclosed are 1,4-dihydro-naphthyridine derivatives and pharmaceutical composition and uses thereof. The 1,4-dihydro-naphthyridine derivatives are a compound capable of inhibiting acetylcholinesterase activity and preventing extracellular calcium from flowing into a cell via a calcium channel, i.e., having a dual-activity, which are of potential importance as a pharmaceutical and can be used to prepare the drugs for treating cardiovascular diseases, cerebrovascular diseases and dementia.
    Type: Application
    Filed: December 7, 2012
    Publication date: December 11, 2014
    Applicant: Jiangsu Simovay Pharmaceutical Co., Ltd.
    Inventors: Rong Chen, Lin Feng, Zhengping Zhang, Fang Fang, Qingli Dong, Fulong Li, Lei Wang, Yao Hua, Shibao Yang, Peng Wang