Abstract: A method for thermally processing a substrate having a surface region and a buried region with a pulsed light beam, the substrate presenting an initial temperature-depth profile and the surface region presenting an initial surface temperature, including steps of: illuminating the surface region with a preliminary pulse so that it generates an amount of heat and reaches a predetermined preliminary surface temperature; and illuminating the surface region with a subsequent pulse after a time interval so that it reaches a predetermined subsequent surface temperature. The time interval is determined such that the surface region reaches a predetermined intermediate surface temperature greater than the initial surface temperature, such that during the time interval, the amount of heat is diffused within the substrate down to a predetermined depth so that the substrate presents a predetermined intermediate temperature-depth profile.

Abstract: System for spatially controlling an amount of energy delivered to a processed surface of a processed substrate including a first area and a second area, the first area having a first combination of optical properties and thermal properties, and the second area having a second combination of optical properties and thermal properties, the first combination and second combination being different, the system including a light source configured to emit a pulsed light beam towards the processed surface, wherein the pulsed light beam delivers a first amount of energy onto the first area of the processed surface so that the first area reaches a first target temperature, and a second amount of energy to the second area of the processed surface so that the second area reaches a second target temperature. A corresponding method is also described.

Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Abstract: A method for uniformly irradiating a frame of a processed substrate, the processed substrate including a plurality of frames, two consecutive frames being separated by an intermediate zone, the method includes steps of: determining an initial position of the processed substrate using a detecting unit; comparing the detected initial position with a first predetermined position associated with a first frame of the processed substrate; irradiating the first frame of the processed substrate by an irradiation beam emitted by a source unit and scanned by a scanning unit based on the first predetermined position, the irradiation beam being adapted to cover uniformly the whole first frame. A system for uniformly irradiating a frame of a processed substrate is also described.

Abstract: The present invention relates to a process for irradiating a processed surface (5) of a processed substrate (1) so as to obtain a predefined temperature profile, the processed surface (5) comprising a first area (11) and a second area (13), said first area (11) having a first combination of optical properties and thermal properties, and said second area (13) having a second combination of optical properties and thermal properties, said first combination and second combination being different. A further object of the invention is a system (21) for irradiating a processed surface (5) of a processed substrate (1) so as to obtain a predefined temperature profile, the processed surface (5) comprising a first area (11) and a second area (13), said first area (11) having a first combination of optical properties and thermal properties, and said second area (13) having a second combination of optical properties and thermal properties, said first combination and second combination being different.

Abstract: A method for thermally processing a substrate having a surface region and a buried region with a pulsed light beam, the substrate presenting an initial temperature-depth profile and the surface region presenting an initial surface temperature, including steps of: illuminating the surface region with a preliminary pulse so that it generates an amount of heat and reaches a predetermined preliminary surface temperature; and illuminating the surface region with a subsequent pulse after a time interval so that it reaches a predetermined subsequent surface temperature. The time interval is determined such that the surface region reaches a predetermined intermediate surface temperature greater than the initial surface temperature, such that during the time interval, the amount of heat is diffused within the substrate down to a predetermined depth so that the substrate presents a predetermined intermediate temperature-depth profile.

Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Abstract: Disclosed is a process for manufacturing a deep junction electronic device including steps of: b) Depositing a layer of non-monocrystalline semiconductor material on a plane surface of a substrate of a monocrystalline semiconductor material; c) Incorporating inactivated dopant elements prior to step b) into said substrate (1) and/or, respectively, during or after step b) into said layer, so as to form an inactivated doped layer; d) Exposing, an external surface of the layer formed at step b) to a laser thermal anneal beam, so as to melt said layer down to the substrate and so as to activate said dopant elements incorporated at step c); e) Stopping exposure to the laser beam so as to induce epi-like crystallization of the melted layer, so that said substrate and/or, respectively, an epi-like monocrystalline semiconductor material, comprises a layer of activated doped monocrystalline semiconductor material.

Abstract: Disclosed is a process for manufacturing a deep junction electronic device including steps of: b) Depositing a layer of non-monocrystalline semiconductor material on a plane surface of a substrate of a monocrystalline semiconductor material; c) Incorporating inactivated dopant elements prior to step b) into said substrate (1) and/or, respectively, during or after step b) into said layer, so as to form an inactivated doped layer; d) Exposing, an external surface of the layer formed at step b) to a laser thermal anneal beam, so as to melt said layer down to the substrate and so as to activate said dopant elements incorporated at step c); e) Stopping exposure to the laser beam so as to induce epi-like crystallization of the melted layer, so that said substrate and/or, respectively, an epi-like monocrystalline semiconductor material, comprises a layer of activated doped monocrystalline semiconductor material.

Abstract: A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.

Abstract: A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.