Abstract: A composite, soft-magnetic powder comprising soft-magnetic, iron-based core particles having an average particle size of 2-100 ?m, and boron nitride-based coating layers each covering at least part of each soft-magnetic, iron-based core particle, said coating layers being polycrystalline layers comprising fine boron nitride crystal grains having different crystal orientations and an average crystal grain size of 3-15 nm, the average thickness of said polycrystalline layers being 6.6% or less of the average particle size of said soft-magnetic, iron-based core particles, is produced by (1) mixing iron nitride powder having an average particle size of 2-100 ?m with boron powder having an average particle size of 0.1-10 ?m, (2) heat-treating the resultant mixed powder at a temperature of 600-850° C. in a nitrogen atmosphere, and (3) removing non-magnetic components.

Abstract: An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 ?cm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.