Patents by Inventor Fumiaki Koiwa

Fumiaki Koiwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitive coupling plasma processing apparatus and method
    Patent number: 7692916
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: April 6, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Naoki Matsumoto, Hideaki Tanaka, Hisashi Fujiwara, Chishio Koshimizu, Fumiaki Koiwa, Toshiyuki Kobayashi, Youichi Nakayama, Hiroshi Nakamura
  • Capacitive coupling plasma processing apparatus and method
    Publication number: 20070029194
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.
    Type: Application
    Filed: March 31, 2006
    Publication date: February 8, 2007
    Inventors: Naoki Matsumoto, Hideaki Tanaka, Hisashi Fujiwara, Chishio Koshimizu, Fumiaki Koiwa, Toshiyuki Kobayashi, Youichi Nakayama, Hiroshi Nakamura