Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.

Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitable material includes: a solid solution of MN (where M is at least one of gallium, aluminum and indium) and ZnO, wherein the photoexcitable material includes 30 to 70 mol % ZnO and has a band gap energy of 2.20 eV or less.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A method of manufacturing a capacitor includes forming, above a first metal foil, a first dielectric film of a ceramic material containing barium oxide by blowing dry ceramic particles to the first metal foil from a nozzle, forming, in the first dielectric film, a first via conductor connected to the first metal foil and a second via conductor connected to the first metal foil, forming, above the first dielectric film, a first electrode pattern connected to the first via conductor, and patterning the first metal foil to form a second electrode pattern connected to the second via conductor.

Abstract: A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.

Abstract: A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.

Abstract: Several ten thousands or several millions of juxtaposed hollow thin tubes, each having a diameter of, for example, 12 .mu.m and a length of 1 mm, are joined to each other to form a window having a predetermined open surface area. The window having a diameter of, for example, 30 mm, can withstand a differential pressure of several atm. A high-vacuum X-ray source and the window consisting of thin tubes having the aforementioned dimensions are connected through a differential evacuating device having a plurality of stages connected with a partitioning wall having an orifice of predetermined dimensions provided between the adjacent stages. The pressures at the two sides of the window are maintained to the atmospheric pressure and a pressure which is 1/10th of the atmospheric pressure, respectively. X-rays having a long wavelength of 10 .ANG.