Abstract: Provided is an illumination device for obtaining planar light having satisfactory uniformity and suppressed brightness irregularities. A backlight unit (illumination device) (20) comprises a light source and a light-guiding element (23) for guiding light from the light source. The light-guiding element (23) includes prisms (23q) formed in an end area (22b) on the light source side, and prisms (23i) formed in an area (a light-emitting area (22a)) on the side opposite the light source relative to the end area (22b). The prisms (23q) vary the propagation angle of light spreading in a direction intersecting the direction of light entry, more so than the prisms (23i).

Abstract: Provided is an illumination device for obtaining planar light having satisfactory uniformity and suppressed brightness irregularities. A backlight unit (illumination device) (20) comprises a light source and a light-guiding element (23) for guiding light from the light source. The light-guiding element (23) includes prisms (23q) formed in an end area (22b) on the light source side, and prisms (23i) formed in an area (a light-emitting area (22a)) on the side opposite the light source relative to the end area (22b). The prisms (23q) vary the propagation angle of light spreading in a direction intersecting the direction of light entry, more so than the prisms (23i).

Abstract: A display device includes: a light source unit configured to emit light from a light emitting surface; and a phosphor layer (120) having a plurality of phosphors (123R, 123G) provided on a light-emitting side of the light source unit so as to correspond to pixels, and configured to absorb the light emitted from the light source unit and produce fluorescence of a predetermined wavelength. A bottom reflective layer (125) is provided on the side of the light source unit with respect to the phosphor layer (120) at least in regions where the phosphors (123R, 123G) are formed.

Abstract: Provided are planar lighting device that is excellent in luminance uniformity and light use efficiency and a display device including the planar lighting device.

Abstract: A red color filter (13R) includes a first absorbent having an absorption wavelength region in most of a low wavelength region other than the wavelength region of red light (R) emitted by fluorescence and a second absorbent having an absorption wavelength region overlapping with the wavelength region of blue light (B) included in the rest of the wavelength region other than most of the low wavelength region.

Abstract: Disclosed is a liquid crystal display panel wherein the utilization efficiency of light can be improved, while suppressing deterioration of the contrast. Specifically, a color filter (17) of a liquid crystal display panel (10) comprises: a black matrix (21) which is provided with an opening (2a); a red phosphor layer (22) and a red filter layer (23) which are arranged within the opening (21a) in a red display region (R); a green phosphor layer (24) and a green filter layer (25) which are arranged within the opening (21a) in a green display region (G); and a transparent resin layer (26) and a blue filter layer (27) which are arranged within the opening (21a) in a blue display region (B) A light exit surface of the transparent resin layer (26) is provided with a plurality of projected portions (26c), and the transparent resin layer (26) has a refractive index different from that of the blue filter layer (27), which is in contact with the light exit surface.

Abstract: A liquid crystal display panel (39) includes a diffraction grating (DG) that is provided on the side of the inner surface (32N) of an opposed substrate (32) for receiving light and is used for enhancing the light output efficiency from the inner surface (32N) to the outside.

Abstract: A planar illumination device is provided that enhances the efficiency of use of light and its brightness while suppressing uneven brightness, that reduces an increase in the manufacturing cost and that can reduce the thickness of the planar illumination device. In this backlight device (planar illumination device) (20), in the light emitting surface (23b) of a light guide body (23), a plurality of prisms (23e) that gradually reduce an angle of incidence of light with respect to the back surface (23c) of the light guide body are provided, and, in the back surface (24a) of a low refractive index layer (24), a plurality of prisms (24b) that have the function of forwardly and totally reflecting light from LEDs (21) in an interface between the back surface of the low refractive index layer and an air layer are formed.

Abstract: There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layer 114 is absent over a first region R1 ranging to a specified length L1 in a perpendicular direction X from a center line J1 of a light-emitting region 150 toward both sides of the perpendicular direction X. That is, the first region R1 over which the light-emitting region 150 is present serves as an incomplete bonding region between the solder layer 114 of the semiconductor laser element 100 and a heat sink 200. Thus, stress given to the light-emitting region 150 due to differences in coefficient of thermal expansion among the semiconductor laser element 100, the solder layer 114 and the heat sink 200 during operation is reduced.

Abstract: A semiconductor laser improved in heat sinkability of portions in the vicinity of a light-emitting end face of a main body in order to prevent occurrence of COD is provided. A main body 150 having a light-emitting end face 150a for emitting laser light is formed on a semiconductor substrate, n-type GaAs substrate. Thickness of a front end portion 112a in the vicinity of the light-emitting end face 150a of a plated metal layer 112 formed on the main body 150 is larger than thickness of a central portion 112b of the plated metal layer 112 in a direction along a cavity.

Abstract: The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

Abstract: There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layer 114 is absent over a first region R1 ranging to a specified length L1 in a perpendicular direction X from a center line J1 of a light-emitting region 150 toward both sides of the perpendicular direction X. That is, the first region R1 over which the light-emitting region 150 is present serves as an incomplete bonding region between the solder layer 114 of the semiconductor laser element 100 and a heat sink 200. Thus, stress given to the light-emitting region 150 due to differences in coefficient of thermal expansion among the semiconductor laser element 100, the solder layer 114 and the heat sink 200 during operation is reduced.

Abstract: A semiconductor laser improved in heat sinkability of portions in the vicinity of a light-emitting end face of a main body in order to prevent occurrence of COD is provided. A main body 150 having a light-emitting end face 150a for emitting laser light is formed on a semiconductor substrate, n-type GaAs substrate. Thickness of a front end portion 112a in the vicinity of the light-emitting end face 150a of a plated metal layer 112 formed on the main body 150 is larger than thickness of a central portion 112b of the plated metal layer 112 in a direction along a cavity.

Abstract: A semiconductor laser has a substrate, a laminate including at least an active layer, a ridge stripe portion on the laminate, a current blocking layer provided on lateral side surfaces of the ridge stripe portion and on an upper surface of the laminate on lateral sides of the ridge stripe portion, and a metal plating layer that covers an upper surface of the ridge stripe portion and the current blocking layer. The metal plating layer has a layer thickness that is larger on both lateral sides of the ridge stripe portion than above the ridge stripe portion by an amount approximately corresponding to a height of the ridge stripe portion so that the metal plating layer has a roughly flat upper surface.

Abstract: The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

Abstract: A semiconductor laser device, which is made from an AlGaInP-based material, comprising: