Patents by Inventor Fumihiko Andoh

Fumihiko Andoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state image sensor and a driving method thereof
    Patent number: 5539461
    Abstract: An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.
    Type: Grant
    Filed: March 23, 1994
    Date of Patent: July 23, 1996
    Assignees: Nippon Hoso Kyokai, Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fumihiko Andoh, Kazuhisa Taketoshi, Katsu Tanaka, Masao Yamawaki, Hidekazu Yamamoto, Hiroshi Kawashima, Naofumi Murata
  • Method of manufacturing a camera device
    Patent number: 5466613
    Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.
    Type: Grant
    Filed: January 10, 1995
    Date of Patent: November 14, 1995
    Assignees: Nippon Hoso Kyokai, Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fumihiko Andoh, Kazunori Miyakawa, Hidekazu Yamamoto, Masao Yamawaki
  • Camera device and method of manufacturing the same
    Patent number: 5399882
    Abstract: A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.
    Type: Grant
    Filed: June 16, 1993
    Date of Patent: March 21, 1995
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fumihiko Andoh, Kazunori Miyakawa, Hidekazu Yamamoto, Masao Yamawaki