Patents by Inventor Fumihiko Satoh

Fumihiko Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6472274
    Abstract: A MOSFET device and method, the method involves forming the MOSFET device by selectively doping bordering channel regions in the device such that, in operation, the threshold, or turn-on, voltage is equalized across the channel. The device structure comprises a self-aligned channel edge implant region for equalizing threshold voltages in the channel edge region with threshold voltages in the channel interior region, thereby virtually eliminating sub-threshold leakage current in low voltage applications.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: October 29, 2002
    Assignee: International Business Machines Corporation
    Inventors: John Walter Golz, Fumihiko Satoh
  • Patent number: 4614958
    Abstract: At least one set of light emitting element, converting an electric signal into an optical signal, and light receiving element, converting an optical signal into an electric signal, is integrated into one chip of semiconductor device.
    Type: Grant
    Filed: June 25, 1985
    Date of Patent: September 30, 1986
    Assignee: Omron Tateisi Electronics Co.
    Inventors: Kazuo Mikami, Fumihiko Satoh, Mikihiko Shimura