Patents by Inventor Fumihiko Terayama

Fumihiko Terayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7148567
    Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a–40e, 41a–41e and 42a–42d), a plurality of LEADs (50a–50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a–60e and 61a–61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a–40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a–50d).
    Type: Grant
    Filed: March 14, 2005
    Date of Patent: December 12, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Yasuo Moriguchi, Shintaro Mori, Fumihiko Terayama, Hirokazu Komoriya
  • Publication number: 20050156305
    Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a-40e, 41a-41e and 42a-42d), a plurality of LEADs (50a-50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a-60e and 61a-61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a-40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a-50d).
    Type: Application
    Filed: March 14, 2005
    Publication date: July 21, 2005
    Inventors: Yasuo Moriguchi, Shintaro Mori, Fumihiko Terayama, Hirokazu Komoriya
  • Patent number: 6674623
    Abstract: In a microcomputer equipped with a built-in temperature sensor, diodes as a temperature sensor are incorporated in a pair of circuit blocks, respectively, and placed in opposite polarity connection to each other. When detecting a temperature of the microcomputer, a constant current If is supplied to the diodes through terminals commonly connected to both the diodes. A voltage Vf generated at each diode is read through terminals located at more adjacent nodes to the diode when compared in position with the terminals.
    Type: Grant
    Filed: May 24, 2000
    Date of Patent: January 6, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshihiro Abe, Shintaro Mori, Fumihiko Terayama, Masahiro Kitamura, Seiichi Yamazaki, Yasuo Moriguchi
  • Publication number: 20030102556
    Abstract: A semiconductor integrated circuit device has two semiconductor integrated circuit chips (20 and 30) respectively provided with a plurality of PADs (40a-40e, 41a-41e and 42a-42d), a plurality of LEADs (50a-50d) disposed around arrays of the semiconductor integrated circuit chips, and a plurality of bonding wires (60a-60e and 61a-61d). The plurality of bonding wires are connected so as not to straddle one semiconductor integrated circuit chip (30) and allow wiring between the PADs (40a-40e) of the other semiconductor integrated circuit chip (20) and the LEADs (50a-50d).
    Type: Application
    Filed: June 4, 2002
    Publication date: June 5, 2003
    Inventors: Yasuo Moriguchi, Shintaro Mori, Fumihiko Terayama, Hirokazu Komoriya
  • Patent number: 6541840
    Abstract: An on-chip capacitor is provided with a P-type silicon substrate, a bottom N-well region formed on said P-type silicon substrate, mutually adjacent first P-well and first N-well regions formed on said bottom N-well region, a first electrode formed on said first N-well region, and a second electrode formed on said first P-well region, a coupling surface is formed with said first N-well region and said first P-well region and a capacitance is formed between a power source voltage and a grounding voltage formed between said first P-well region and said bottom N-well region. Thus it is not necessary to maintain a device region, to form a capacitance, to form wiring or maintain a wiring region as in a conventional MOS capacitance while it is possible to obtain a required decoupling capacitance.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: April 1, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fumihiko Terayama, Seiiti Yamazaki, Sintaro Mori
  • Patent number: 5736849
    Abstract: The invention provides a semiconductor device capable of switching drive powers of an output buffer thereof smaller than that for an ordinary operation for detecting even a slight short caused when a component is lying on a wiring pattern, thereby preventing damage of the device in the test even when the wiring pattern between the devices are short-circuited, and further provides a semiconductor device capable of switching drive powers of an output buffer thereof larger than that for an ordinary operation for surely detecting a short between a connection series including the above-mentioned semiconductor device and another connection series including a semiconductor device only having drive powers for the ordinary operation.
    Type: Grant
    Filed: August 25, 1995
    Date of Patent: April 7, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Fumihiko Terayama
  • Patent number: 5239633
    Abstract: A data processor which comprises a pipeline processing mechanism for executing memory indirect addressing and register indirect addressing in an address calculation stage, checks whether or not an instruction writes an operand to a memory or register, makes each stage of the pipeline mechanism hold reservation information thereof in sequence, thereby reduces the frequency of stops of pipeline processing caused by processing of operand address calculation of the following instruction attending on a writing of the operand of the preceding instruction to a memory or register, so that data processing can be execute at a higher efficiency.
    Type: Grant
    Filed: May 4, 1990
    Date of Patent: August 24, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fumihiko Terayama, Yuichi Saitou, Toyohiko Yoshida