Abstract: Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

Abstract: There is provided a semiconductor device capable of deactivating 2-dimensional electron gas (2DEG) layers in a buffer layer having a multi-layer film structure. The buffer layer is formed in a high electron mobility transistor (HEMT) formed on a silicon (Si) substrate. The semiconductor device includes the substrate whose uppermost layer is the Si layer, the buffer layer constructed by alternately stacking a plurality of first layers and a plurality of second layers on the Si layer, third layer serving as an electron transit layer formed on the buffer layer, and fourth layer serving as an electron supplying layer formed on the third layer. The first layer is composed of the same material as for the third layer. A p-type impurity is introduced into the first layers so as to deactivate the 2DEG layers formed in the first layer near interfaces between the first and second layers.

Abstract: A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.

Abstract: A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.

Abstract: An aspect of the invention provides a heterojunction field effect transistor that comprises: a base; a first GaN channel layer formed on the base; an AlN electron supply layer formed on the first GaN layer, and a second GaN cap layer formed on the AlN layer.

Abstract: A heterojunction field effect transistor includes a laminated body. The laminated body includes a channel layer of GaN, an electron supply layer of AlN or AlxGa1-xN (0.6?x<1) formed on the channel layer, and a cap layer of GaN formed on the electron supply layer.

Abstract: A semiconductor device includes a substrate, laminated layers provided on the substrate. The laminated layers include an AlGaN barrier layer as an uppermost layer. A gate electrode is provided in a channel region of the laminated layers. A source electrode and a drain electrode are provided so as to face each other via the channel region interposed therebetween. A silicon nitride film is formed to cover an exposed surface of the laminated layers exposed via the gate electrode, the source electrode and the drain electrode. The silicon nitride film has characteristics that an etching rate thereof is in a range from 1 nm per/min to 2 nm/min for an etchant in which hydrofluoric acid having a concentration of 50 weight percent and ammonium fluoride having a concentration of 40 weight percent are mixed at a mixing ratio of 1:9.

Abstract: Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

Abstract: Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

Abstract: A semiconductor body includes, on a substrate, a stack of buffer layer, UID-GaN layer overlying the buffer layer, and UID-AlGaN layer overlying the UID-GaN layer. On the surface of the UID-AlGaN layer, an insulation film is deposited and patterned. An n+-GaN layer is selectively regrown directly on a region of the surface of the semiconductor body other than the insulation film using the patterned insulation film as a mask without etching the surface of the semiconductor body. A portion of the selectively regrown n+-GaN layer corresponding to a region reserved for an ohmic contact electrode is defined and the ohmic contact electrode is formed on the region. An opening exposing a region reserved for a gate electrode is defined and formed within the insulation SiO2 layer, and a gate electrode is formed in the region. An AlGaN/GaN-HEMT or MIS type of AlGaN/GaN-HEMT has lower contact resistance and uniform device characteristics.

Abstract: Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.

Abstract: A wafer for semiconductor device fabrication, from which large output power can be obtained by making the off-state breakdown voltage higher than in the prior art. The wafer for semiconductor device fabrication comprises a substrate, GaN electron transit layer formed on the side of the principal surface of the substrate, and AlGaN electron supply layer formed on the electron transit layer. The thickness of the electron transit layer is from 0.2 to 0.9 ?m.

Abstract: Excitation light is irradiated onto a GaN layer on a silicon carbide substrate constituting a layered product that is set on a stage. Then light is emitted from a defective part caused by a structural defect of the silicon carbide substrate out of the GaN layer. By using this light luminescence phenomena, a position of a defective part of the silicon carbide substrate can be detected.