Patents by Inventor Fumihiro Toyokawa
Fumihiro Toyokawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10961327Abstract: Provided is a rubber material that is well-balanced in terms of tensile strength, low hysteresis loss property, wet grip property, and abrasion resistance. A hydrogenated conjugated diene-based polymer which is a hydrogenation product of a conjugated diene-based polymer including butadiene-derived structural units is produced by a method comprising a step of preparing a conjugated diene-based polymer having, at a side chain moiety thereof, a functional group capable of interacting with silica; and a step of hydrogenating the conjugated diene-based polymer so as to achieve a hydrogenation rate of 80 to 99% of butadiene-derived structural units included in the conjugated diene-based polymer.Type: GrantFiled: September 6, 2016Date of Patent: March 30, 2021Assignee: JSR CORPORATIONInventors: Takumi Adachi, Hirofumi Senga, Fumihiro Toyokawa, Naoya Nosaka, Takaomi Matsumoto, Ryoji Tanaka
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Publication number: 20190062539Abstract: There is provided a hydrogenated conjugated diene-based rubber which can give a crosslinked rubber having high strength and excellent low fuel consumption performance and can give a rubber composition having excellent formability. A hydrogenated conjugated diene-based rubber having a hydrogenation rate of butadiene unit of 90% or more, wherein, in the molecular weight distribution of the hydrogenated conjugated diene-based rubber as determined by a gel permeation chromatographic method, when a peak area of a molecular weight of 1,000 to 250,000 is taken as AL and a peak area of a molecular weight of 250,000 or more is taken as AH, the ratio of AL to the total area of AL and AH is 0.5% to 20%.Type: ApplicationFiled: March 1, 2017Publication date: February 28, 2019Applicant: JSR CORPORATIONInventors: Takumi ADACHI, Hirofumi SENGA, Fumihiro TOYOKAWA
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Composition, method for producing patterned substrate, film and forming method thereof, and compound
Patent number: 10146131Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.Type: GrantFiled: September 23, 2015Date of Patent: December 4, 2018Assignee: JSR CORPORATIONInventors: Shin-ya Nakafuji, Fumihiro Toyokawa, Gouji Wakamatsu, Yoshio Takimoto, Katsuhisa Mizoguchi, Takashi Okada, Takaaki Uno, Takeshi Endo, Masaki Moritsugu -
Publication number: 20180251576Abstract: Provided is a rubber material that is well-balanced in terms of tensile strength, low hysteresis loss property, wet grip property, and abrasion resistance. A hydrogenated conjugated diene-based polymer which is a hydrogenation product of a conjugated diene-based polymer including butadiene-derived structural units is produced by a method comprising a step of preparing a conjugated diene-based polymer having, at a side chain moiety thereof, a functional group capable of interacting with silica; and a step of hydrogenating the conjugated diene-based polymer so as to achieve a hydrogenation rate of 80 to 99% of butadiene-derived structural units included in the conjugated diene-based polymer.Type: ApplicationFiled: September 6, 2016Publication date: September 6, 2018Applicant: JSR CORPORATIONInventors: Takumi ADACHI, Hirofumi SENGA, Fumihiro TOYOKAWA, Naoya NOSAKA, Takaomi MATSUMOTO, Ryoji TANAKA
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Publication number: 20180207983Abstract: Provided is a hydrogenated conjugated diene polymer which is a hydrogenated product of a conjugated diene polymer comprising a structural unit derived from a conjugated diene compound and a structural unit derived from an aromatic vinyl compound, wherein the conjugated diene compound includes butadiene, the hydrogenated conjugated diene polymer is obtained by hydrogenating a polymer in which a vinyl bond content in the structural unit derived from butadiene is 50 mol % or less, an amount of the structural unit derived from the aromatic vinyl compound is 5 to 25 mass % with respect to entire structural units derived from monomers of the polymer, and a hydrogenation rate of the structural unit derived from butadiene is 91% to 99%.Type: ApplicationFiled: July 21, 2016Publication date: July 26, 2018Applicant: JSR CORPORATIONInventors: Takumi ADACHI, Ryoji TANAKA, Takaomi MATSUMOTO, Fumihiro TOYOKAWA, Naoya NOSAKA
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Publication number: 20180201065Abstract: Provided is a hydrogenated conjugated diene polymer which is a hydrogenated product of a conjugated diene polymer comprising a structural unit derived from a conjugated diene compound and a structural unit derived from an aromatic vinyl compound, wherein the conjugated diene compound includes butadiene, the hydrogenated conjugated diene polymer is obtained by hydrogenating a polymer in which a vinyl bond content in structural unit derived from butadiene is 55 mol % or more, and a hydrogenation rate of the structural unit derived from butadiene is 91% to 99%.Type: ApplicationFiled: July 21, 2016Publication date: July 19, 2018Applicant: JSR CORPORATIONInventors: Takumi ADACHI, Ryoji TANAKA, Takaomi MATSUMOTO, Fumihiro TOYOKAWA, Naoya NOSAKA
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Publication number: 20180201066Abstract: Provided is a hydrogenated conjugated diene polymer which is a hydrogenated product of a conjugated diene polymer having a structural unit derived from a conjugated diene compound and a structural unit derived from an aromatic vinyl compound, wherein the conjugated diene compound includes butadiene, an amount of the structural unit derived from the aromatic vinyl compound is 30 mass % or more with respect to entire structural units derived from monomers of the polymer, and a hydrogenation rate of the structural unit derived from butadiene is 80% to 99%.Type: ApplicationFiled: July 21, 2016Publication date: July 19, 2018Applicant: JSR CORPORATIONInventors: Takumi ADACHI, Ryoji TANAKA, Takaomi MATSUMOTO, Fumihiro TOYOKAWA, Naoya NOSAKA
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Patent number: 9696626Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.Type: GrantFiled: May 19, 2016Date of Patent: July 4, 2017Assignee: JSR CORPORATIONInventors: Fumihiro Toyokawa, Shin-ya Nakafuji, Gouji Wakamatsu
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Patent number: 9581905Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.Type: GrantFiled: December 4, 2015Date of Patent: February 28, 2017Assignee: JSR CORPORATIONInventors: Shin-ya Nakafuji, Fumihiro Toyokawa, Goji Wakamatsu, Shingo Takasugi, Tooru Kimura
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Publication number: 20160259247Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.Type: ApplicationFiled: May 19, 2016Publication date: September 8, 2016Applicant: JSR CORPORATIONInventors: Fumihiro TOYOKAWA, Shin-ya NAKAFUJI, Gouji WAKAMATSU
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Patent number: 9400429Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.Type: GrantFiled: March 10, 2015Date of Patent: July 26, 2016Assignee: JSR CORPORATIONInventors: Fumihiro Toyokawa, Shin-ya Nakafuji, Gouji Wakamatsu
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Publication number: 20160085152Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.Type: ApplicationFiled: December 4, 2015Publication date: March 24, 2016Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Fumihiro TOYOKAWA, Goji WAKAMATSU, Shingo TAKASUGI, Tooru KIMURA
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Patent number: 9250526Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.Type: GrantFiled: March 5, 2013Date of Patent: February 2, 2016Assignee: JSR CORPORATIONInventors: Tomoaki Seko, Fumihiro Toyokawa, Yuushi Matsumura, Tooru Kimura
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COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND
Publication number: 20160011512Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.Type: ApplicationFiled: September 23, 2015Publication date: January 14, 2016Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Fumihiro TOYOKAWA, Gouji WAKAMATSU, Yoshio TAKIMOTO, Katsuhisa MIZOGUCHI, Takashi OKADA, Takaaki UNO, Takeshi ENDO, Masaki MORITSUGU -
Publication number: 20150185613Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.Type: ApplicationFiled: March 10, 2015Publication date: July 2, 2015Applicant: JSR CORPORATIONInventors: Fumihiro TOYOKAWA, Shin-ya Nakafuji, Gouji Wakamatsu
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Patent number: 8691496Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.Type: GrantFiled: September 11, 2012Date of Patent: April 8, 2014Assignee: JSR CorporationInventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
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Publication number: 20130233826Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.Type: ApplicationFiled: March 5, 2013Publication date: September 12, 2013Applicant: JSR CORPORATIONInventors: Tomoaki SEKO, Fumihiro TOYOKAWA, Yuushi MATSUMURA, Tooru KIMURA
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Publication number: 20130004900Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: JSR CorporationInventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
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Patent number: 8288073Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.Type: GrantFiled: September 18, 2007Date of Patent: October 16, 2012Assignee: JSR CorporationInventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
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Publication number: 20100178620Abstract: A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.Type: ApplicationFiled: November 24, 2009Publication date: July 15, 2010Applicant: JSR CorporationInventors: Satoshi DEI, Kyoyu Yasuda, Koichi Hasegawa, Fumihiro Toyokawa, Masato Tanaka, Keiji Konno