Patents by Inventor Fumihito Kato
Fumihito Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11313716Abstract: A vibration detection element includes substrates, support members, and an oscillator, and may be used as a biosensor and/or for liquid inspection by analysis of oscillator resonant frequency change. The substrates have a space portion, and the support members protrude from the surfaces of the respective substrates into the space portion. The oscillator is disposed between the support members and is capable of vibrating in the space portion. The support members may each include multiple supports which prevent the oscillator from contacting the substrate surfaces. During manufacturing the oscillator may be transferred from the support member of a glass flow path substrate to a silicon flow path substrate by placement of the silicon substrate support member against the oscillator and subsequent removal of the adhesive from the glass substrate support member.Type: GrantFiled: June 21, 2018Date of Patent: April 26, 2022Assignee: OSAKA UNIVERSITYInventors: Hirotsugu Ogi, Tomoyuki Nonaka, Fumihito Kato
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Publication number: 20210123799Abstract: A vibration detection element (10) includes substrates (1 to 3), a support member (22), a support member (32), and an oscillator (4). The substrates (1 to 3) have a space portion (SP) having a bottom surface (21A) and a bottom surface (31A) opposed to the bottom surface (21A). The support member (22) protrudes from the bottom surface (21A) toward the bottom surface (31A) of the space portion (SP). The support member (32) protrudes from the bottom surface (31A) toward the bottom surface (21A) of the space portion. The oscillator (4) is disposed in contact with the support member (22) or the support member (32) and capable of vibrating in the space portion (SP) and has a thickness less than 10 ?m. The support members (22, 32) each include multiple supports which prevent the oscillator (4) from contacting the bottom surface (21A) or the bottom surface (31A).Type: ApplicationFiled: June 21, 2018Publication date: April 29, 2021Inventors: Hirotsugu OGI, Tomoyuki NONAKA, Fumihito KATO
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Patent number: 8809975Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.Type: GrantFiled: December 13, 2011Date of Patent: August 19, 2014Assignee: Panasonic CorporationInventors: Yuichi Niimura, Hideo Nishikawa, Fumihito Kato
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Publication number: 20130264664Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.Type: ApplicationFiled: December 13, 2011Publication date: October 10, 2013Applicant: PANASONIC CORPORATIONInventors: Yuichi Nimura, Hideo Nishikawa, Fumihito Kato
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Patent number: 8438912Abstract: A detection device (10) includes: covers (1-3); an oscillator (4); antennas (9, 11, 12), a testing space (13), and a minute space (14). The testing space (13) and minute space (14) are formed in the covers (1-3). The minute space (14) is open to the testing space (13). The oscillator (4) is disposed in the testing space (13) such that its edge portions are inserted into the minute space (14). The antenna (9) works together with the antenna (12) to apply an electromagnetic field to the oscillator (4). The antenna (11) works together with the antenna (12) to receive a reception signal composed of a vibration signal from the oscillator (4).Type: GrantFiled: December 9, 2010Date of Patent: May 14, 2013Assignee: Japan Science and Technology AgencyInventors: Hirotsugu Ogi, Fumihito Kato, Masahiko Hirao
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Publication number: 20120318052Abstract: A detection device (10) includes: covers (1-3); an oscillator (4); antennas (9, 11, 12), a testing space (13), and a minute space (14). The testing space (13) and minute space (14) are formed in the covers (1-3). The minute space (14) is open to the testing space (13). The oscillator (4) is disposed in the testing space (13) such that its edge portions are inserted into the minute space (14). The antenna (9) works together with the antenna (12) to apply an electromagnetic field to the oscillator (4). The antenna (11) works together with the antenna (12) to receive a reception signal composed of a vibration signal from the oscillator (4).Type: ApplicationFiled: December 9, 2010Publication date: December 20, 2012Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Hirotsugu Ogi, Fumihito Kato, Masahiko Hirao
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Publication number: 20120285254Abstract: A pressure sensor includes: a pressure conversion unit and a signal processing circuit installed in a semiconductor substrate. The pressure conversion unit includes: a diaphragm formed by partially thinning the semiconductor substrate; and a plurality of piezo resistive elements formed on a surface of the diaphragm. The signal processing circuit is constituted by a complementary metal-oxide semiconductor (CMOS) integrated circuit formed in a p-type conductive region disposed around the diaphragm on the surface of the semiconductor substrate, and the piezo resistive elements are provided by forming an n-type conductive region in the p-type conductive region on the surface of the diaphragm by diffusion of n-type impurities and diffusing p-type impurities in the n-type conductive region.Type: ApplicationFiled: January 21, 2011Publication date: November 15, 2012Inventors: Yuichi Niimura, Takeshi Nobe, Hideo Nisikawa, Fumihito Kato
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Patent number: 7943413Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layerType: GrantFiled: July 20, 2007Date of Patent: May 17, 2011Assignee: OMRON CorporationInventors: Takashi Kasai, Yasuhiro Horimoto, Fumihito Kato, Masaki Munechika, Shuichi Wakabayashi, Toshiyuki Takahashi, Masayuki Inuga
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Patent number: 7907744Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.Type: GrantFiled: October 28, 2005Date of Patent: March 15, 2011Assignee: OMRON CorporationInventors: Takashi Kasai, Fumihito Kato, Hiroshi Imamoto, Fumihiko Sato, Masaki Munechika, Toshiyuki Takahashi
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Publication number: 20100038734Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layerType: ApplicationFiled: July 20, 2007Publication date: February 18, 2010Applicant: OMRON CORPORATIONInventors: Takashi Kasai, Yasuhiro Horimoto, Fumihito Kato, Masaki Munechika, Shuichi Wakabayashi, Toshiyuki Takahashi, Masayuki Inuga
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Publication number: 20070261910Abstract: A vibration electrode plate 112 is formed on the upper face of a silicon substrate 32 with an insulating coat film 35 interposed in between. An opposing electrode plate 113 is placed on the vibration electrode plate 112 with an insulating coat film interposed in between, and acoustic holes 40 are opened through the opposing electrode plate 113. Etching holes 36 and 104, each having a semi-elliptical shape, are opened through the vibration electrode plate 112 and the opposing electrode plate 113 so as to face each other longitudinally. A concave section 37 having a truncated pyramid shape is formed in the upper face of the silicon substrate 32, by carrying out an etching process through the etching holes 36 and 104. The vibration electrode plate 112 is held in the silicon substrate 32 by a holding portion 112 placed between the etching holes 36.Type: ApplicationFiled: October 28, 2005Publication date: November 15, 2007Inventors: Takashi Kasai, Fumihito Kato, Hiroshi Imamoto, Fumihiko Sato, Masaki Munechika, Toshiyuki Takahashi
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Patent number: RE46486Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.Type: GrantFiled: August 7, 2015Date of Patent: July 25, 2017Assignee: Panasonic CorporationInventors: Yuichi Niimura, Hideo Nishikawa, Fumihito Kato