Patents by Inventor Fumikazu Mizutani
Fumikazu Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240060180Abstract: Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and/or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.Type: ApplicationFiled: October 6, 2023Publication date: February 22, 2024Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu MIZUTANI, Shintaro HIGASHI, Naoyuki TAKEZAWA
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Publication number: 20240003004Abstract: Provided are a CVD source material used in production of a film containing indium and one or more of the other metals, which is stably preservable over the long term and easily handled, and a production method thereof. The CVD source material comprises ?0.1 mol of one or more compounds of formulae (3) to (6) on the 100 mol basis of a compound of formula (1) or (2). In(C5H4R) . . . (1), In(C5(CH3)4R) . . . (2), M1(C5H4R) . . . (3), M2 (C5H4R)n . . . (4), M1(C5(CH3)4R) . . . (5), and M2(C5(CH3)4R)n . . . (6). In formulae (1) to (6), each R is independently hydrogen or an alkyl group having 1 to 6 carbons, in formulae (3) and (5), M1 is a metal excluding indium, in formulae (4) and (6), M2 is a metal excluding indium and n is an integer of 2 to 4.Type: ApplicationFiled: November 26, 2021Publication date: January 4, 2024Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Nobutaka TAKAHASHI, Fumikazu MIZUTANI, Shintaro HIGASHI
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Patent number: 11807939Abstract: Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and/or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.Type: GrantFiled: July 13, 2018Date of Patent: November 7, 2023Assignee: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu Mizutani, Shintaro Higashi, Naoyuki Takezawa
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Publication number: 20230160051Abstract: Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.Type: ApplicationFiled: May 14, 2021Publication date: May 25, 2023Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu Mizutani, Shintaro Higashi, Nobutaka Takahashi
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Patent number: 11655538Abstract: A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C5H4R1—In) as a main component, also containing at least one component selected from alkylcyclopentediene (C5H5R2), dialkylcyclopentadiene ((C5H5R3)2), trisalkylcyclopentadienylindium (III) ((C5H4R4)3—In) and triscyclopentadienyl indium (III) as secondary components (wherein R1 to R4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.Type: GrantFiled: June 4, 2018Date of Patent: May 23, 2023Assignee: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu Mizutani, Shintaro Higashi
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Publication number: 20220251706Abstract: Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.Type: ApplicationFiled: July 28, 2020Publication date: August 11, 2022Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Nobutaka TAKAHASHI, Fumikazu MIZUTANI, Shintaro HIGASHI
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Publication number: 20210163519Abstract: Provided is a precursor for chemical vapor deposition for depositing a zinc-containing thin film. Bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (1) which is liquid at room temperature and is therefore easy to handle (in the formula (1), R1 and R2 are alkyl group having 3 carbon atoms); a precursor for chemical vapor deposition comprising bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (2) (in the formula (2), R3 and R4 are alkyl group having 2-5 carbon atoms); and a production method for a zinc-containing thin film through chemical vapor deposition.Type: ApplicationFiled: November 21, 2019Publication date: June 3, 2021Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Nobutaka TAKAHASHI, Fumikazu MIZUTANI
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Patent number: 10752992Abstract: Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms).Type: GrantFiled: November 19, 2018Date of Patent: August 25, 2020Assignee: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu Mizutani, Shintaro Higashi
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Publication number: 20200181775Abstract: A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C5H4R1—In) as a main component, also containing at least one component selected from alkylcyclopentediene (C5H5R2), dialkylcyclopentadiene ((C5H5R3)2), trisalkylcyclopentadienylindium (III) ((C5H4R4)3—In) and triscyclopentadienyl indium (III) as secondary components (wherein R1 to R4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.Type: ApplicationFiled: June 4, 2018Publication date: June 11, 2020Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu MIZUTANI, Shintaro HIGASHI
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Publication number: 20200087787Abstract: Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and/or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.Type: ApplicationFiled: July 13, 2018Publication date: March 19, 2020Applicant: KOJUNDO CHEMICAL LABORATORY CO., LTD.Inventors: Fumikazu MIZUTANI, Shintaro HIGASHI, Naoyuki TAKEZAWA
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Publication number: 20190203357Abstract: Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms).Type: ApplicationFiled: November 19, 2018Publication date: July 4, 2019Applicant: Kojundo Chemical Laboratory Co., Ltd.Inventors: Fumikazu MIZUTANI, Shintaro HIGASHI
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Patent number: 9476137Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.Type: GrantFiled: May 3, 2012Date of Patent: October 25, 2016Assignees: Tohoku University, Mitsubishi Chemical CorporationInventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa
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Patent number: 8415451Abstract: A liquid crystal polyimide, containing: repeating units of formula (I) and having liquid crystallinity, wherein A1 and A2 are each independently a tetravalent residue of a tetracarboxylic acid, B1 is a residue of a bis(amino) polysiloxane of formula (II), and C1 is a residue of an organic diamine, wherein R1 to R6 are each independently a lower alkyl group, x is from 0 to 10, D1 is an alkylene group, y is 0 or 1, and Z1 is selected from the group consisting of —H, —CH3, CF3, —F, —CN and —NO2. In addition, a liquid crystal resin composition and a resin film for a semiconductor element containing the liquid crystal polyimide.Type: GrantFiled: November 10, 2011Date of Patent: April 9, 2013Assignee: Mitsubishi Chemical CorporationInventors: Mitsuru Ueda, Yu Shoji, Fumikazu Mizutani, Tomohide Murase
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Publication number: 20120247961Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.Type: ApplicationFiled: May 3, 2012Publication date: October 4, 2012Applicants: Mitsubishi Chemical Corporation, Tohoku UniversityInventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa
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Patent number: 8206833Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.Type: GrantFiled: May 9, 2006Date of Patent: June 26, 2012Assignees: Tohoku University, Mitsubishi Chemical CorporationInventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa
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Publication number: 20120123050Abstract: A liquid crystal polyimide, containing: repeating units of formula (I) and having liquid crystallinity, wherein A1 and A2 are each independently a tetravalent residue of a tetracarboxylic acid, B1 is a residue of a bis(amino)polysiloxane of formula (II), and C1 is a residue of an organic diamine, wherein R1 to R6 are each independently a lower alkyl group, x is from 0 to 10, D1 is an alkylene group, y is 0 or 1, and Z1 is selected from the group consisting of —H, —CH3, CF3, —F, —CN and —NO2. In addition, a liquid crystal resin composition and a resin film for a semiconductor element containing the liquid crystal polyimide.Type: ApplicationFiled: November 10, 2011Publication date: May 17, 2012Applicant: Mitsubishi Chemical CorporationInventors: Mitsuru UEDA, Yu Shoji, Fumikazu Mizutani, Tomohide Murase
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Patent number: 8124240Abstract: A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.Type: GrantFiled: June 16, 2006Date of Patent: February 28, 2012Assignees: Tohoku University, Mitsubishi Chemical Corporation, Nihon Ceratec Co., Ltd.Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa, Yukio Kishi
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Patent number: 7906004Abstract: A high-quality oxide film which is free from a pinhole and surface roughing caused by anodic oxidation and which has surface smoothness on a surface of a material to be treated containing a metal as a principal component. An electrolyte solution which is used for forming an oxide film on a surface of a material to be treated containing a metal as a principal component by anodic oxidation, the electrolyte solution containing a non-aqueous solvent containing an alcoholic hydroxyl group and having 4 or more carbon atoms as a main solvent. This non-aqueous solvent preferably contains two or more alcoholic hydroxyl groups and is especially preferably one or two or more members selected from the group consisting of diethylene glycol, triethylene glycol and polyethylene glycol. A method of forming an oxide film including a step of anodically oxidizing a material to be treated containing a metal as a principal component in this electrolyte solution.Type: GrantFiled: September 29, 2005Date of Patent: March 15, 2011Assignee: Mitsubishi Chemical CorporationInventors: Fumikazu Mizutani, Toshiaki Sakakihara, Yasuhiro Kawase, Makoto Ishikawa
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Publication number: 20090142588Abstract: Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1? thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 ?m thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film.Type: ApplicationFiled: June 16, 2006Publication date: June 4, 2009Applicants: TOHOKU UNIVERSITY, MITSUBISHI CHEMICAL CORPORATION, NIHON CERATEC CO., LTD.Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa, Yukio Kishi
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Publication number: 20090038946Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.Type: ApplicationFiled: May 9, 2006Publication date: February 12, 2009Applicants: Tohoku University, Mitsubishi Chemical CorporationInventors: Tadahiro Ohmi, Yasuyuki Shirai, Hitoshi Morinaga, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Makoto Ishikawa