Abstract: A semiconductor device may have a semiconductor substrate. The semiconductor substrate may include an IGBT region that overlaps with a collector region and a diode region that overlaps with a cathode region. The semiconductor substrate may include a drift region distributed across the IGBT region and the diode region, a body region, a body contact region, and an emitter region arranged in the IGBT region, and an anode region and an anode contact region arranged in the diode region. The body region may include a first body region and a second body region having a p-type impurity density lower than any of that in the first body region and that in the anode region. The second body region may be adjacent to the anode region. The first body region may be adjacent to the second body region at an opposite side from the anode region.

Abstract: A semiconductor device may have a semiconductor substrate. The semiconductor substrate may include an IGBT region that overlaps with a collector region and a diode region that overlaps with a cathode region. The semiconductor substrate may include a drift region distributed across the IGBT region and the diode region, a body region, a body contact region, and an emitter region arranged in the IGBT region, and an anode region and an anode contact region arranged in the diode region. The body region may include a first body region and a second body region having a p-type impurity density lower than any of that in the first body region and that in the anode region. The second body region may be adjacent to the anode region. The first body region may be adjacent to the second body region at an opposite side from the anode region.

Abstract: A semiconductor layer of a vertical diode is divided into a center region and a surrounding region. An anode electrode contacts a surface of the center region in the semiconductor layer. An insulation layer contacts a surface of the surrounding region in the semiconductor layer. Ring-shaped FLR regions are formed in the surface of the surrounding region in the semiconductor layer. The innermost FLR region extends from an inside to an outside of a boundary between the anode electrode and the insulation layer, and extends along the boundary. A shoulder portion is formed in the surface of the semiconductor layer in a manner such that a portion that contacts the insulation layer is higher than a portion that contacts the anode electrode. Flows of holes directed toward the anode electrode pass through a plurality of positions in the shoulder portion.

Abstract: A semiconductor layer of a vertical diode is divided into a center region and a surrounding region. An anode electrode contacts a surface of the center region in the semiconductor layer. An insulation layer contacts a surface of the surrounding region in the semiconductor layer. Ring-shaped FLR regions are formed in the surface of the surrounding region in the semiconductor layer. The innermost FLR region extends from an inside to an outside of a boundary between the anode electrode and the insulation layer and extends along the boundary. A shoulder portion is formed in the surface of the semiconductor layer in a manner such that a portion that contacts the insulation layer is higher than a portion that contacts the anode electrode. Flows of holes directed toward the anode electrode pass through a plurality of positions in the shoulder portion.