Abstract: According to one embodiment, a non-volatile memory device includes electrodes, one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film extends between the conductive layers and the semiconductor layer in the first direction. The second insulating film is provided between each electrode and the conductive layers. The conductive layers become smaller in a thickness as the conductive layers are closer to an end in the first direction or a direction opposite to the first direction.

Abstract: A film formation apparatus according to an embodiment includes a first chamber capable of accommodating a substrate therein and a second chamber capable of accommodating a substrate therein. A first oxygen supply system supplies oxygen to the first and second chambers simultaneously. A second oxygen supply system selectively switches a chamber, in which oxygen is supplied, at least between the first chamber and the second chamber.

Abstract: According to one embodiment, a semiconductor memory device includes an insulating film with a recess formed in an upper surface, and a conductive film provided on the insulating film and containing silicon, carbon and an impurity serving as an acceptor or donor for silicon. Carbon concentration of a first portion of the conductive film in contact with the insulating film is lower than carbon concentration of a second portion of the conductive film located in the recess and being equidistant from the insulating film placed on both sides thereof.

Abstract: A nonvolatile semiconductor memory device includes: a semiconductor member; a memory film provided on a surface of the semiconductor member and being capable of storing charge; and a plurality of control gate electrodes provided on the memory film, spaced from each other, and arranged along a direction parallel to the surface. Average dielectric constant of a material interposed between one of the control gate electrodes and a portion of the semiconductor member located immediately below the control gate electrode adjacent to the one control gate electrode is lower than average dielectric constant of a material interposed between the one control gate electrode and a portion of the semiconductor member located immediately below the one control gate electrode.