Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract: In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.

Abstract: To appropriately form a metal-containing film containing metal on a substrate, a method first forms an organic film on the substrate, and causes a treatment agent to enter the organic film and causes metal to infiltrate the organic film via the treatment agent, thereby forming the metal-containing film. The metal-containing film contains metal and thus has a high etching selection ratio that is originally required performance. This makes it possible to appropriately form the metal-containing film having a high etching selection ratio on the substrate.

Abstract: The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

Abstract: The present invention includes: a resist film forming step of forming a resist film over a substrate; an exposure step of exposing the resist film into a predetermined pattern; a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist film and causing metal to infiltrate the exposed portion via the treatment agent; and a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a resist pattern over the substrate.

Abstract: In the present invention, photolithography processing is performed on a substrate to form a resist pattern over the substrate, and a treatment agent is caused to enter a side surface of the resist pattern and metal is caused to infiltrate the side surface of the resist pattern via the treatment agent, the formed resist pattern has a high etching selection ratio with respect to a film to be treated on the substrate so as to suppress a so-called pattern collapse, therefore.

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Abstract: To appropriately form a metal-containing film containing metal on a substrate, a method first forms an organic film on the substrate, and causes a treatment agent to enter the organic film and causes metal to infiltrate the organic film via the treatment agent, thereby forming the metal-containing film. The metal-containing film contains metal and thus has a high etching selection ratio that is originally required performance. This makes it possible to appropriately form the metal-containing film having a high etching selection ratio on the substrate.

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Abstract: A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.

Abstract: A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

Abstract: A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.

Abstract: A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

Abstract: A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.

Abstract: A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area.

Abstract: A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.

Abstract: A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area.