Abstract: A wiring substrate includes first wiring portions, an insulation layer covering the first wiring portions, openings extending through the insulation layer in a thickness-wise direction, partially exposing upper surfaces of the first wiring portions, and differing from each other in capacity, and second wiring portions, each of which includes a via wiring filling one of the openings and a columnar connection terminal electrically connected to the via wiring and arranged on an upper surface of the insulation layer. The via wiring includes an electrolytic plated layer and an electroless plating structure including N layers (N is integer and ?0) arranged between the electrolytic plated layer and the upper surface of the first wiring portion exposed in a bottom of the opening. The via wiring is formed so that the electroless plating structure has a thickness that increases as a capacity of the opening filled with the via wiring is increased.

Abstract: A wiring substrate includes first wiring portions, an insulation layer covering the first wiring portions, openings extending through the insulation layer in a thickness-wise direction, partially exposing upper surfaces of the first wiring portions, and differing from each other in capacity, and second wiring portions, each of which includes a via wiring filling one of the openings and a columnar connection terminal electrically connected to the via wiring and arranged on an upper surface of the insulation layer. The via wiring includes an electrolytic plated layer and an electroless plating structure including N layers (N is integer and ?0) arranged between the electrolytic plated layer and the upper surface of the first wiring portion exposed in a bottom of the opening. The via wiring is formed so that the electroless plating structure has a thickness that increases as a capacity of the opening filled with the via wiring is increased.

Abstract: To an internal vessel that houses cells of a solid oxide fuel cell, an external vessel is further disposed. In the internal vessel, a plurality of planar cells is disposed vertically with a gap between the cells, a mixed gas of a fuel and air is descended from top down through the gap having a predetermined width between the cells, and, at a bottom portion of the housing space, the mixed gas is burned to generate electricity.

Abstract: A wiring board has a structure where multiple wiring layers are stacked one on top of another with insulating layers interposed therebetween. A sheet-shaped member is buried in an outermost insulating layer located on a side of the structure opposite to a side on which a semiconductor element is to be mounted. The sheet-shaped member has a modulus of elasticity and a coefficient of thermal expansion which are similar to a modulus of elasticity and a coefficient of thermal expansion of the semiconductor element. The sheet-shaped member is made of a material having a modulus of elasticity and a coefficient of thermal expansion which are enough to bring respective distributions thereof into a substantially symmetric form in a direction orthogonal to a surface of the wiring board in the case where the semiconductor element is mounted.

Abstract: A semiconductor package includes a semiconductor chip; a resin part configured to cover a side surface of the semiconductor chip; and a wiring structure formed on a circuit forming surface of the semiconductor chip and a surface of the resin part being situated at the same side as the circuit forming surface, the wiring structure being electrically connected to the semiconductor chip, wherein the resin part is formed so as to cover a part of a surface of the semiconductor chip situated at an opposite side to the circuit forming surface of the semiconductor chip.

Abstract: A solid electrolyte fuel cell comprising a cathode layer 12 formed on one side of a solid electrolyte layer 10 and an anode layer 18 formed on the other side of the solid electrolyte layer 10, wherein the cathode layer 16 comprises a first cathode layer 12 formed in contact with the solid electrolyte layer and a second cathode layer 14 formed covering the first cathode layer 12, the second cathode layer 14 is formed having a higher porosity than the first cathode layer 12 and the first cathode layer 12 is divided into a plurality of island-shaped portions 12a, 12a.

Abstract: A direct-flame fuel cell according to the invention has a cell in which a solid electrolyte 1 is sandwiched between an anode 2 and a cathode 3. The anode 2 contains one or more kinds of alkaline metal compounds or alkaline earth metal compounds which are effective in suppressing soot generation due to exposure to a flame. Where the anode 2 includes two or more layers 2a and 2b, the one or more kinds of alkaline metal compounds or alkaline earth metal compounds are contained in the outermost layer 2b.

Abstract: A wiring board includes a plate-shaped resin member; chip connection pads provided in the resin member, the chip connection pads having connection surfaces electrically connected to electrode pads provided on a semiconductor chip, the connection surfaces being situated in substantially the same plane as a first surface of the resin member, the first surface being a side where the semiconductor chip is mounted; pads provided in a portion of the resin member, the portion being situated outside an area where the chip connection pads are formed; lead wirings connected to the pads; and conductive wires sealed by the resin member, the conductive wires electrically connecting the chip connection pads and the pads to each other.

Abstract: A wiring board has a structure where multiple wiring layers are stacked one on top of another with insulating layers interposed therebetween. A sheet-shaped member is buried in an outermost insulating layer located on a side of the structure opposite to a side on which a semiconductor element is to be mounted. The sheet-shaped member has a modulus of elasticity and a coefficient of thermal expansion which are similar to a modulus of elasticity and a coefficient of thermal expansion of the semiconductor element. The sheet-shaped member is made of a material having a modulus of elasticity and a coefficient of thermal expansion which are enough to bring respective distributions thereof into a substantially symmetric form in a direction orthogonal to a surface of the wiring board in the case where the semiconductor element is mounted.

Abstract: A manufacturing method includes forming a semi-cured insulation layer made of a photosensitive material on a supporting body; forming an opening part in the insulation layer by a photolithography method, the opening part being configured to expose the supporting body; arranging a semiconductor chip on the insulation layer so that a position of an electrode of the semiconductor chip is consistent with a position of the opening part, and curing the insulation layer; forming sealing resin on a surface of the insulation layer at the semiconductor chip side, the sealing resin being configured to seal the semiconductor chip; removing the supporting body; and providing a wiring layer on a surface of the insulation layer opposite to the semiconductor chip side, the wiring layer being electrically connected to the electrode exposed in the opening part, so that a wiring structural body including the insulation layer and the wiring layer is formed.

Abstract: A semiconductor element sealed substrate including a semiconductor element covered by an insulating layer is fabricated while a wiring substrate formed by stacking wiring layers is fabricated by a process different from the process of fabricating the semiconductor element sealed substrate. Next, the semiconductor element sealed substrate and the wiring substrate are stacked on each other in such a way that electrode terminals of the semiconductor element and corresponding conductive bumps on the outermost wiring layer face each other. The electrode terminals and the conductive bumps are thus connected to each other.

Abstract: A semiconductor element sealed substrate including a semiconductor element covered by an insulating layer is fabricated while a wiring substrate formed by stacking wiring layers is fabricated by a process different from the process of fabricating the semiconductor element sealed substrate. Next, the semiconductor element sealed substrate and the wiring substrate are stacked on each other in such a way that electrode terminals of the semiconductor element and corresponding conductive bumps on the outermost wiring layer face each other. The electrode terminals and the conductive bumps are thus connected to each other.

Abstract: A manufacturing method includes forming a semi-cured insulation layer made of a photosensitive material on a supporting body; forming an opening part in the insulation layer by a photolithography method, the opening part being configured to expose the supporting body; arranging a semiconductor chip on the insulation layer so that a position of an electrode of the semiconductor chip is consistent with a position of the opening part, and curing the insulation layer; forming sealing resin on a surface of the insulation layer at the semiconductor chip side, the sealing resin being configured to seal the semiconductor chip; removing the supporting body; and providing a wiring layer on a surface of the insulation layer opposite to the semiconductor chip side, the wiring layer being electrically connected to the electrode exposed in the opening part, so that a wiring structural body including the insulation layer and the wiring layer is formed.

Abstract: A semiconductor device includes a semiconductor chip having a connection electrode on a surface side, and a resin substrate sealing a periphery of the semiconductor chip and formed to have a thickness from a back surface of the semiconductor chip to a lower side thereof, and the resin substrate whose lower surface is positioned to a lower side than the back surface of the semiconductor chip. A wiring layer is connected directly to the connection electrode of the semiconductor chip without the intervention of solder.

Abstract: A semiconductor package includes a semiconductor chip; a resin part configured to cover a side surface of the semiconductor chip; and a wiring structure formed on a circuit forming surface of the semiconductor chip and a surface of the resin part being situated at the same side as the circuit forming surface, the wiring structure being electrically connected to the semiconductor chip, wherein the resin part is formed so as to cover a part of a surface of the semiconductor chip situated at an opposite side to the circuit forming surface of the semiconductor chip.

Abstract: A semiconductor device includes: a semiconductor element that has a first surface on which an electrode terminal is formed and a second surface opposite to the first surface; a resin mold portion in which the semiconductor element is embedded and that has a third surface exposing the first surface and a fourth surface opposite to the third surface; and a wiring layer formed on the third surface and the first surface, wherein a plurality of conducting portions are provided in the resin mold portion, which penetrate the resin mold portion along a thickness direction thereof to be electrically connected to the wiring layer.

Abstract: A multilayer wiring board includes: a substrate; connection pads arranged in a square grid fashion; and wiring patterns. Relationship between the connection pads and the wiring patterns satisfies: {(Ndl+1)P?d?s}/(w+s)>2Ndr+Ndl(a+1)+2a, wherein P is a pitch of the connection pads, d is a diameter of the connection pads, s is a minimum interval between the wiring patterns and is a minimum interval between the wiring pattern and the connection pad that are adjacent to each other, w is a minimum width of the wiring patterns, Ndl is the number of non-pad rows in each of the non-pad regions, Ndr is the number of non-pad columns in each of non-pad region, and a is an integer of (P?d?s)/(w+s).

Abstract: There is provided a multilayer wiring substrate on which at least one semiconductor element is mounted. The multilayer wiring substrate includes: a baseboard; a first wiring layer formed on the baseboard and having a plurality of first wiring portions; an insulating layer formed on the baseboard; a second wiring layer formed on the insulating layer and having a plurality of second wiring portions, the second wiring portions being electrically connected to each other via a conductor wire, the conductor wire being arranged within the insulating layer three-dimensionally in a curved manner; and conductor portions configured to pass through the insulating layer and connecting the first wiring portions and the second wiring portions.

Abstract: A wiring board includes a plate-shaped resin member; chip connection pads provided in the resin member, the chip connection pads having connection surfaces electrically connected to electrode pads provided on a semiconductor chip, the connection surfaces being situated in substantially the same plane as a first surface of the resin member, the first surface being a side where the semiconductor chip is mounted; pads provided in a portion of the resin member, the portion being situated outside an area where the chip connection pads are formed; lead wirings connected to the pads; and conductive wires sealed by the resin member, the conductive wires electrically connecting the chip connection pads and the pads to each other.

Abstract: A solid electrolyte fuel cell including a cathode layer formed on one surface of a solid electrolyte layer and an anode layer formed on the other surface of the solid electrolyte layer, wherein the cathode layer is a multi-layer structure including at least two layers, the outermost layer constituting the multi-layer structure is a porous layer obtained by adding a pore-forming material which is gasified at the firing temperature for the formation of the cathode layer during the formation of the cathode layer by firing and has a mesh metal or wire metal for current collection embedded therein or fixed thereto and the innermost layer disposed in contact with the solid electrolyte layer is a dense layer obtained by firing free of pore-forming material during the formation of the cathode layer by firing.