Patents by Inventor Fu Ming Huang
Fu Ming Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240114810Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.Type: ApplicationFiled: April 20, 2023Publication date: April 4, 2024Inventors: Fu-Ting Sung, Jhih-Bin Chen, Hung-Shu Huang, Hong Ming Liu, Hsia-Wei Chen, Yu-Wen Liao, Wen-Ting Chu
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Publication number: 20240097035Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Chen-Ming Lee, I-Wen Wu, Po-Yu Huang, Fu-Kai Yang, Mei-Yun Wang
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Publication number: 20240071850Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.Type: ApplicationFiled: August 29, 2022Publication date: February 29, 2024Inventors: FU-MING HSU, MING-JIE HUANG, ZHEN-CHENG WU, YUNG-CHENG LU
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Publication number: 20230364733Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20230352295Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Inventors: Fu-Ming Huang, Liang-Guang Chen, Ting-Kui Chang, Chun-Chieh Lin
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Patent number: 11772228Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: GrantFiled: January 17, 2020Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20230271298Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11728157Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.Type: GrantFiled: May 2, 2022Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Fu-Ming Huang, Liang-Guang Chen, Ting-Kui Chang, Chun-Chieh Lin
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Patent number: 11679469Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.Type: GrantFiled: August 23, 2019Date of Patent: June 20, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11658065Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: GrantFiled: June 15, 2020Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20230082084Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.Type: ApplicationFiled: November 21, 2022Publication date: March 16, 2023Inventors: JI CUI, FU-MING HUANG, TING-KUI CHANG, TANG-KUEI CHANG, CHUN-CHIEH LIN, WEI-WEI LIANG, LIANG-GUANG CHEN, KEI-WEI CHEN, HUNG YEN, TING-HSUN CHANG, CHI-HSIANG SHEN, LI-CHIEH WU, CHI-JEN LIU
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Patent number: 11508585Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: GrantFiled: June 15, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20220359277Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: ApplicationFiled: July 27, 2022Publication date: November 10, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Cheng Chen, Huicheng Chang, Fu-Ming Huang, Kei-Wei Chen, Liang-Yin Chen, Tang-Kuei Chang, Yee-Chia Yeo, Wei-Wei Liang, Ji Cui
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Patent number: 11450565Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: GrantFiled: August 19, 2020Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng Chen, Huicheng Chang, Fu-Ming Huang, Kei-Wei Chen, Liang-Yin Chen, Tang-Kuei Chang, Yee-Chia Yeo, Wei-Wei Liang, Ji Cui
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Publication number: 20220262620Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Inventors: Fu-Ming Huang, Liang-Guang Chen, Ting-Kui Chang, Chun-Chieh Lin
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Patent number: 11322345Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.Type: GrantFiled: April 22, 2019Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fu-Ming Huang, Liang-Guang Chen, Ting-Kui Chang, Chun-Chieh Lin
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Publication number: 20210391186Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20210391208Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20210371702Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.Type: ApplicationFiled: January 5, 2021Publication date: December 2, 2021Inventors: JI CUI, CHI-JEN LIU, LIANG-GUANG CHEN, KEI-WEI CHEN, CHUN-WEI HSU, LI-CHIEH WU, PENG-CHUNG JANGJIAN, KAO-FENG LIAO, FU-MING HUANG, WEI-WEI LIANG, TANG-KUEI CHANG, HUI-CHI HUANG
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Publication number: 20210305092Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: ApplicationFiled: August 19, 2020Publication date: September 30, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Cheng CHEN, Huicheng CHANG, Fu-Ming HUANG, Kei-Wei CHEN, Liang-Yin CHEN, Tang-Kuei CHANG, Yee-Chia YEO, Wei-Wei LIANG, Ji CUI