Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. The method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.

Abstract: A slide rail assembly includes a first rail with a positioning structure, a second rail displaceable relative to the first rail and providing a concave surface on the back to face the positioning structure, a first stopper pivotally connected to the concave surface corresponding to the first side of the positioning structure, and an operating member movably connected to the second rail and placed on the concave surface so that the operating member is on the side of the first stopper. The slide rail assembly can be installed on the side of the carrier, which can be a server case or drawer, or can be used on servers or furniture.

Abstract: A method includes receiving a carrier, the carrier including a carrier body, a first filter, and a housing securing the first filter to the carrier body. The method further includes uninstalling the housing from the carrier, replacing the first filter with a second filter, reinstalling the housing on the carrier body, and inspecting the second filter. Inspecting the second filter includes using an automatic inspection mechanism to detect surface flatness of the second filter.

Abstract: A method includes forming a gate stack, growing a source/drain region on a side of the gate stack through epitaxy, depositing a contact etch stop layer (CESL) over the source/drain region, depositing an inter-layer dielectric over the CESL, etching the inter-layer dielectric and the CESL to form a contact opening, and etching the source/drain region so that the contact opening extends into the source/drain region. The method further includes depositing a metal layer extending into the contact opening. Horizontal portions, vertical portions, and corner portions of the metal layer have a substantially uniform thickness. An annealing process is performed to react the metal layer with the source/drain region to form a source/drain silicide region. The contact opening is filled to form a source/drain contact plug.

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: A device, used in conjunction with a brainwave detector, includes a display unit configured to display at least one object initial information of an application program, a brainwave signal receiving module for receiving at least one brainwave signal from the brainwave detector, an analysis and judgment unit analyzing and judging the at least one brainwave signal to generate mental activity classification information, and a recover control unit generating alteration information based on the mental activity classification information, recovering the object initial information into object expectation information according to the alteration information, and displaying the object expectation information on the display unit.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: A semiconductor structure and a method of forming the same are provided. An exemplary method of forming the semiconductor structure includes receiving a workpiece including a fin structure over a front side of a substrate, recessing a source region of the fin structure to form a source opening, extending the source opening into the substrate to form a plug opening, forming a semiconductor plug in the plug opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a first wet etching process to remove a portion of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize a rest portion of the substrate, performing a second wet etching process to remove the amorphized rest portion of the substrate to form a dielectric opening, depositing a dielectric layer in the dielectric opening, and replacing the semiconductor plug with a backside source contact.

Abstract: A silicon compound, a preparation method thereof, and a lithium battery are provided. The silicon compound is represented by the following Chemical formula 1: (R1)m—Si—(L—A)n ??[Chemical formula 1] In Chemical formula 1, each substituent is defined the same as in the specification.

Abstract: A preparation method of a positive electrode material of a lithium battery is provided, including mixing a compound containing at least one ethylenically-unsaturated group and one carbonyl group or a derivative thereof and a Ni-rich oxide of lithium and transition metal to react. The compound containing at least one ethylenically-unsaturated group and one carbonyl group is selected from a group consisting of a maleimide-based compound, an acrylate-based compound, a methacrylate-based compound, an acrylamide-based compound, a vinylamide-based compound, and a combination thereof, and the Ni-rich oxide of lithium and transition metal is represented by formula I, LiNixMyO2 ??Formula I wherein x+y=1, 1>x?0.5, and M is at least one transition metal element except Ni.

Abstract: A manufacturing method of a protein sensor includes the following steps. A hydrophobic material is provided and the hydrophobic material has a surface. An atmospheric pressure plasma process is performed to form a hydrophilic functional group on the surface of the hydrophobic material. A first antibody is immobilized on the surface of the hydrophobic material by the hydrophilic functional group. A mixed solution is prepared. The mixed solution includes a second antibody and an analyte, and the second antibody binds to the analyte. The mixed solution is reacted with the first antibody immobilized on the surface of the hydrophobic material to bind the first antibody to the analyte. Furthermore, a protein sensor manufactured by the above-described manufacturing method of the protein sensor is also provided.

Abstract: A manufacturing method of a protein sensor includes the following steps. A hydrophobic material is provided and the hydrophobic material has a surface. An atmospheric pressure plasma process is performed to form a hydrophilic functional group on the surface of the hydrophobic material. A first antibody is immobilized on the surface of the hydrophobic material by the hydrophilic functional group. A mixed solution is prepared. The mixed solution includes a second antibody and an analyte, and the second antibody binds to the analyte. The mixed solution is reacted with the first antibody immobilized on the surface of the hydrophobic material to bind the first antibody to the analyte. Furthermore, a protein sensor manufactured by the above-described manufacturing method of the protein sensor is also provided.

Abstract: A preparation method of a positive electrode material of a lithium battery is provided, including mixing a compound containing at least one ethylenically-unsaturated group or a derivative thereof and a Ni-rich oxide of lithium and transition metal to react. The compound containing at least one ethylenically-unsaturated group and one carbonyl group are selected from a group consisting of a maleimide-based compound, an acrylate-based compound, a methacrylate-based compound, an acrylamide-based compound, a vinylamide-based compound, and a combination thereof. The Ni-rich oxide of lithium and transition metal is represented by formula I, LiNixMyO2 ??Formula I wherein x+y=1, 1>x?0.5, and M is at least one transition metal element except Ni.

Abstract: A silicon compound, a preparation method thereof, and a lithium battery are provided. The silicon compound is represented by the following Chemical formula 1: (R1)4-n—Si-(L-A)n??[Chemical formula 1] In Chemical formula 1, each substituent is defined the same as in the specification.

Abstract: An oligomer and a lithium battery are provided. The oligomer is obtained by a reaction of epoxy acrylate and barbituric acid. The lithium battery includes an anode, a cathode, a separator, an electrolyte solution and a packaging structure, wherein the cathode includes the oligomer.

Abstract: An oligomer-polymer and a lithium battery are provided. The oligomer-polymer is obtained by a polymerization of a polymerizable compound having at least one ethylenically unsaturated group and at least one active hydrogen group in the same molecule. The lithium battery includes an anode, a cathode, a separator, an electrolyte solution and a package structure, wherein the cathode includes the oligomer-polymer.

Abstract: A oligomer and a lithium battery are provided. The oligomer is obtained by a polymerization reaction of a compound containing at least one ethylenically unsaturated group and a nucleophile compound. The compound containing at least one ethylenically unsaturated group is selected from a group consisting of a maleimide-based compound, an acrylate ester-based compound, a methacrylate ester-based compound, an acrylamide-based compound, a vinylamide-based compound and a combination thereof. The nucleophile compound is selected from a group consisting of monomaleimide, trithiocyanuric acid, hydantoin, hydantoin derivative, thiohydantoin, thiohydantoin derivative and a combination thereof.