Patents by Inventor Fuminori Hikami
Fuminori Hikami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7046490Abstract: A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.Type: GrantFiled: January 6, 2000Date of Patent: May 16, 2006Assignee: Western Digital (Fremont), Inc.Inventors: Masaki Ueno, Hideyasu Nagai, Koichi Suzuki, Tomoki Fukagawa, Fuminori Hikami
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Patent number: 7026063Abstract: A method and apparatus of a spin-type magnetoresistance sensor having a free and pinned magnetic layer stacked with a non-magnetic interposed layer are disclosed.Type: GrantFiled: March 23, 2001Date of Patent: April 11, 2006Assignee: Western Digital (Fremont), Inc.Inventors: Masaki Ueno, Hiroshi Nishida, Fuminori Hikami
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Patent number: 6798625Abstract: The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an antiferromagnetic layer adjacent to the pinned layers. The sensor is also equipped with a back layer including at least two nonmagnetic metal layers adjacent to the free layers on the side of the free layers opposite the nonmagnetic spacer layer. The back layer has at least one nonmagnetic metal layer of Cu with high electrical conductivity, preferably formed adjacent to the free layers, as for example in a two-layer structure of Cu and Ru or a three-layer structure Ru/Cu/Ru. In addition to a high read output, fluctuations in Hint with the film thickness of the back layer can be suppressed and sensor characteristics stabilized, and high recording densities can be realized.Type: GrantFiled: September 26, 2000Date of Patent: September 28, 2004Assignee: Western Digital (Fremont), Inc.Inventors: Masaki Ueno, Kiyotaka Tabuchi, Tatsuo Sawasaki, Hiroshi Nishida, Kazuhiro Mizukami, Fuminori Hikami
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Patent number: 6791807Abstract: A spin-valve magnetic transducing element. In one embodiment, a spin-valve magnetic transducing element is disclosed in which a ferromagnetic tunneling junction film, including first and second ferromagnetic layers and an insulating layer is enclosed between the ferromagnetic layers. A nonmagnetic metal thin film is inserted between the second ferromagnetic layer and the insulating layer, all of which are formed on a substrate.Type: GrantFiled: June 4, 1999Date of Patent: September 14, 2004Assignee: Read-Rite SMI CorporationInventors: Fuminori Hikami, Hideyasu Nagai, Masaki Ueno, Marcos M. Lederman, Hirohiko Kamimura, Masahiko Ando, Kenji Komaki
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Patent number: 6636394Abstract: A spin-valve magnetic resistance sensor. In one embodiment, the spin-valve magnetic resistance sensor includes a pair of ferromagnetic layers with a non-magnetic layer sandwiched in between. The pair of ferromagnetic layers, the non-magnetic layer and an antiferromagnetic layer are laminated on a substrate. The antiferromagnetic layer is formed using an antiferromagnetic material which uses a Pt—Mn—X alloy, Ir—Mn—X alloy, Rh—Mn—X alloy, Ru—Mn—X alloy or Pd—Mn—X alloy. X indicates one or more elements selected from a set consisting of elements of groups IIA, IVA, VA, IIIB and IVB of the periodic table. X is in the range of 0.1 at % to 15 at %.Type: GrantFiled: February 23, 2000Date of Patent: October 21, 2003Assignee: Read-Rite SMI Corp.Inventors: Tomoki Fukagawa, Hiroshi Nishida, Masateru Nose, Fuminori Hikami
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Patent number: 6340533Abstract: A synthetic-type spin-valve MR sensor having a pinned magnetic layer with a multi-layer film structure. In one embodiment, on a substrate are formed by layering a free magnetic layer, a pinned magnetic layer including first and second ferromagnetic films, which are mutually coupled antiferromagnetically and which enclose a nonmagnetic coupling film. A nonmagnetic conductive layer is enclosed between these two magnetic layers. An antiferromagnetic layer neighbors the pinned magnetic layer. The first ferromagnetic film neighboring the antiferromagnetic layer is formed from a high-resistivity Co-base material. By making the products of the saturation magnetization and the film thickness of the first ferromagnetic layer and the second ferromagnetic layer substantially equal, the apparent magnetic moment of the pinned magnetic layer as a whole is zero, and the magnetostatic action on the free magnetic layer is eliminated or reduced.Type: GrantFiled: November 19, 1999Date of Patent: January 22, 2002Assignee: Read-Rite CorporationInventors: Masaki Ueno, Hideyasu Nagai, Tatsuo Sawasaki, Fuminori Hikami
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Publication number: 20020004147Abstract: A method and apparatus of a spin-type magnetoresistance sensor having a free and pinned magnetic layer stacked with a non-magnetic interposed layer are disclosed.Type: ApplicationFiled: March 23, 2001Publication date: January 10, 2002Inventors: Masaki Ueno, Hiroshi Nishida, Fuminori Hikami
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Patent number: 6266216Abstract: An inductive/MR composite type thin-film magnetic head. In one embodiment, the inductive/MR composite type thin-film magnetic head is equipped with an inductive head used for writing. The inductive head includes an insulating film and a conductive coil that are laminated between upper and lower magnetic films. The inductive/MR composite type thin-film magnetic head also includes a magnetic resistance (MR) head used for read-out. The inductive/MR composite type thin-film magnetic head is characterized by the fact that a distance L between [i] the upper and lower magnetic poles, which face each other across a magnetic gap at the tip ends of the aforementioned upper and lower magnetic films and [ii] the point where the aforementioned upper and lower magnetic films are joined together has the relationship of L<8400/X, with respect to the desired data transmission rate X (Mbit/sec) of the aforementioned thin-film magnetic head. In one embodiment, L is less than or equal to 60 microns.Type: GrantFiled: November 7, 1997Date of Patent: July 24, 2001Assignee: Read-Rite CorporationInventors: Fuminori Hikami, Kenji Komaki, Masayuki Takagishi
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Patent number: 6222707Abstract: A system and method for providing a spin valve is disclosed. The spin valve is formed on a substrate. In one aspect, the method and system include providing a seed layer including NiFe above the substrate and providing an antiferromagnetic layer on the seed layer. The seed layer provides the desired texture for the antiferromagnetic layer. The seed layer could include NiFeCr, NiFeNb, NiFeRh, or a NiFe/Cu multilayer. The method and system further include providing a pinned layer above the antiferromagnetic layer, the pinned layer being exchange coupled to the antiferromagnetic layer, providing a spacer layer above the pinned layer and providing a free layer above the spacer layer. In a second aspect, the method and system include providing a seed layer including Cu instead of NiFe. In a third aspect, the method and system include providing a synthetic antiferromagnetic layer in lieu of the antiferromagnetic layer and the pinned layer.Type: GrantFiled: December 28, 1998Date of Patent: April 24, 2001Assignee: Read-Rite CorporationInventors: Yiming Huai, Geoffrey Anderson, Ningjia Zhu, Wenjie Chen, Fuminori Hikami
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Patent number: 5969911Abstract: An inductive/MR composite type thin film magnetic head which realizes high speed, high density recording while at the same time preventing the occurrence of read-out error by reducing NLTS.Type: GrantFiled: March 4, 1998Date of Patent: October 19, 1999Assignee: Read-Rite SMI CorporationInventors: Fuminori Hikami, Masayuki Takagishi
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Patent number: 5154984Abstract: The present invention relates to a metal-ceramic composite for use in a high temperature and a abrasion-resisting member such as a supporting member of a heating furnace having a construction, in which ceramic particles having superior abrasion resistance and heat resistance are dispersed in a metallic matrix having superior toughness or ceramic blocks are buried in a metallic surface, whereby the characteristics of a ceramic and a metal are simultaneously utilized. A metal-ceramic composite superior in physical characteristic, such as abrasion resistance and heat resistance, and a method of producing the same are provided.Type: GrantFiled: December 6, 1991Date of Patent: October 13, 1992Assignee: Sumitomo Metal Industries, Ltd.Inventors: Yoshiyasu Morita, Manabu Seguchi, Kazuo Okamura, Fuminori Hikami, Koichiro Ishihara, Katsutoshi Hara
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Patent number: 4947924Abstract: The present invention relates to a metal-ceramic composite for use in a high temperature and abrasion-resisting member such as a supporting member of a heating furnace having a construction, in which ceramic particles having superior abrasion resistance and heat resistance are dispersed in a metallic matrix having superior toughness or ceramic blocks are buried in a metallic surface, whereby the characteristics of a ceramic and a metal are simultaneously utilized. A metal-ceramic composite superior in physical characteristic, such as abrasion resistance and heat resistance, and a method of producing the same are provided.Type: GrantFiled: March 1, 1989Date of Patent: August 14, 1990Assignee: Sumitomo Metal Industries, Ltd.Inventors: Yoshiyasu Morita, Manabu Seguchi, Kazuo Okamura, Fuminori Hikami, Koichiro Ishihara, Katsutoshi Hara