Patents by Inventor Fumio Hoshi

Fumio Hoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8716453
    Abstract: Proteins respectively having the amino acid sequences represented by SEQ ID NOs: 1, 17 and 32; structural genes respectively encoding the proteins, preferably respectively having the nucleotide sequences represented by SEQ ID NOs: 2, 18 and 33; an antibody capable of specifically binding to feline-derived cystatin C, feline-derived ?2 microglobulin or feline-derived ?1 microglobulin; a kit for diagnosing feline nephropathy, containing the antibody of the present invention; and a method for diagnosing feline nephropathy using the antibody of the present invention.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: May 6, 2014
    Assignees: School Juridical Person Kitasato Institute, Nipro Corporation
    Inventor: Fumio Hoshi
  • Publication number: 20130004971
    Abstract: Proteins respectively having the amino acid sequences represented by SEQ ID NOs: 1, 17 and 32; structural genes respectively encoding the proteins, preferably respectively having the nucleotide sequences represented by SEQ ID NOs: 2, 18 and 33; an antibody capable of specifically binding to feline-derived cystatin C, feline-derived ?2 microglobulin or feline-derived ?1 microglobulin; a kit for diagnosing feline nephropathy, containing the antibody of the present invention; and a method for diagnosing feline nephropathy using the antibody of the present invention.
    Type: Application
    Filed: December 16, 2010
    Publication date: January 3, 2013
    Inventor: Fumio Hoshi
  • Patent number: 7709376
    Abstract: A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: May 4, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideto Matsuyama, Fumio Hoshi
  • Publication number: 20090026626
    Abstract: A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed.
    Type: Application
    Filed: July 17, 2008
    Publication date: January 29, 2009
    Inventors: Hideto MATSUYAMA, Fumio HOSHI
  • Patent number: 4251270
    Abstract: Method of controlling steel making process under atmospheric pressure, comprising forming an intimate mixture of an exhaust gas and a measured quantity of a reference gas; mass spectrometrically monitoring a sample of the mixture for the ionization currents for selected peaks with which the CO, CO.sub.2, N.sub.2 and reference gas in the sample are concerned; determining the rate or amount of decarburization of the molten steel from the measured value of the quantity of the reference gas in the mixture and the measured values of the ionization currents, and; controlling the process according to the determined value of the rate or amount of decarburization.
    Type: Grant
    Filed: August 30, 1978
    Date of Patent: February 17, 1981
    Assignee: Nisshin Steel Co., Ltd.
    Inventors: Fumio Hoshi, Yuzo Saita, Akira Fujisawa
  • Patent number: 4251269
    Abstract: Method of controlling steel making process under reduced pressures, comprising forming an intimate mixture of an exhaust gas and a measured quantity of a reference gas; mass spectrometrically monitoring a sample of the mixture for the ionization currents for selected peaks with which the CO, CO.sub.2, N.sub.2 and reference gas in the sample are concerned; determining the rate or amount of decarburization of the molten steel from the measured value of the quantity of the reference gas in the mixture and the measured values of the ionization currents, and; controlling the process according to the determined value of the rate or amount of decarburization.
    Type: Grant
    Filed: August 30, 1978
    Date of Patent: February 17, 1981
    Assignee: Nisshin Steel Co., Ltd.
    Inventors: Fumio Hoshi, Yuzo Saita, Akira Fujisawa