Abstract: A pattern dimension measuring method for measuring the dimension of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scan type electron microscope capable of setting a desired inclination angle of the specimen stage a lens barrel, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion, the method comprising: a first step of calculating the distance between top edges of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle which allows to observe the bottom edges; a third step of obtaining

Abstract: A pattern configuration measuring method of and apparatus for measuring a cross sectional profile of a pattern (10) formed on a flat plane with a concave or convex structure having a taper portion (10a, 10b) on both sides thereof, by scanning a beam in a predetermined direction with a scanning electron microscope (1), detecting a secondary electron to acquire an image signal of the pattern, and processing the image signal.

Abstract: This method is a method of measuring a taper angle, a thickness or a depth of a semiconductor integrated circuit pattern. Electron beam, light beam or the like is irradiated to a semiconductor integrated circuit pattern provided on a reference plane, thus to form a projected image. The projected image forms a predetermined angle with respect to a reference line set with respect to the reference plane. Then, lengths in a direction of the reference line of the projected images of symmetrical side walls of the pattern are measured to calculate from the ratio of those lengths and angle that the side walls and the reference plane form.

Abstract: An image forming method includes a first step of irradiating a beam onto an object, and using an intensity corresponding to an image area onto which the beam was irradiated as an intensity of a pixel at the center of the image area, and scanning a beam throughout the inspection area of the object to obtain an image within the inspection area as a collection of pixels arranged at intervals smaller than a beam diameter; and a second step of assigning a pixel to be processed and neighboring pixels with coefficients in accordance with a beam intensity distribution, multiplying the intensity of each pixel by each assigned coefficient, determining a new intensity of the pixel to be processed in accordance with the sum of respective products, and repeating the new intensity determining process for all pixels necessary to be processed. In the second step, the value of the coefficients for those pixels except on the scanning direction may be reduced.

Abstract: Before detecting the surface state of specific patterns a sample by means of an electron beam tester system, patterns formed in a specified surface area of the sample, are detected by deflecting an electron beam by a deflection coil. Data representing current supplied to the deflection coil, data representing the position of the sample during the pattern-detecting operation, and image signals representing the patterns found in the specified surface area, are stored in a memory. While the specific patterns of a sample are being detected, the electron beam is used to perform a second pattern-detecting operation. Data representing current supplied to the deflection coil during the second pattern-detecting operation, such data representing the position of the sample, and image signals provided by the second pattern-detecting operation representing the patterns formed in the specified surface area, afe compared with those data items already stored in the memory.

Abstract: A method of electron beam exposure comprising selectively exposing a resist film on a substrate a plurality of times with an electron beam whose dose is lower than a desired dose sufficient to produce a difference in molecular weight between the exposed area and the nonexposed area, the cumulative dose corresponding to said desired dose.