Abstract: To provide an image display apparatus in which, even if pixel data is phase-expanded, the influence of differences in circuit characteristic can be dispersed between frames. The apparatus has a phase expansion circuit 380 to which are input a first video signal A1 having pixel data for driving pixels with positive voltages and a second video signal A2 having pixel data for driving pixels with negative voltages. The phase expansion circuit 380 forms six phase-expanded signals V1 to V6 from the first and second video signals A1 and A2. The phase-expanded signals are expanded into pixel data by extending the data length of items of the pixel data corresponding to some of the pixels periodically selected. The phase expansion circuit 380 outputs the phase-expanded signals to phase-expanded signal output lines in parallel with each other.

Abstract: A gamma correction circuit is provided for gamma correcting first and second polarity video signals of different polarity. The gamma correction circuit includes first and second resistance elements R1, R2 connected in series between a power supply terminal 50 and a ground terminal 52 and a third resistance element R3 connected in parallel with the first resistance element R1 between the power supply terminal 50 and the second resistance element R2. A fourth resistance element R4 is connected in parallel with the second resistance element R2 between the ground terminal 52 and the third resistance element R3. An output terminal 54 is arranged between the first and second resistance elements R1, R2. An input transistor Tr1 is connected between the first and second resistance elements R1, R2 with its base supplied with a video signal. A first control transistor is connected between the power supply terminal 50 and the third resistance element R3.

Abstract: A clamp and gamma correction circuit which processes an image signal through a clamp circuit and then a gamma correction circuit in that order to perform a proper gamma correction with a clamp voltage adjusted to its appropriate value. An image signal varying between a black level and a white level is applied to the clamp circuit. The clamp circuit outputs an image signal, the black level of which is clamped to the clamp voltage, while the amplitude between the black level and the white level is maintained at constant level. The gamma correction circuit amplifies the image signal output by the clamp circuit at different amplification factors based on a reference voltage. A voltage setting circuit varies the clamp voltage and the reference voltage but with the voltage difference therebetween kept constant, and applies the clamp voltage and the reference voltage to the clamp circuit and the gamma correction circuit, respectively.

Abstract: The focus detection mechanism of the invention diffracts the return light reflected off target surface by means of holographic element. The diffracted beams are both received by two long photodetection means as two astigmatic convergent beams that forms circles of least confusion on the same plane near focal plane of a lens. The focus detection signal is obtained from differential output of them. Since the mechanism can form two diffracted beams having circles of least confusion on the same plane, the photodetection means for detection can be disposed side by side, thus simplifying production with increased dimensional accuracy. Also, although a holographic element is used, wavelength fluctuation can be absorbed to provide extremely high reliability.

Abstract: An apparatus and technique for providing isolation for a signal source utilizing two or more modulators is described. In particular, the apparatus generates a timed sequence of "open gates" that are synchronized to the data signal which permit transmission in a forward direction, and which attenuate a reverse direction signal. Another embodiment attenuates primarily reflected light signals by utilizing a passive waveguide and a modulator. The passive waveguide provides a propagation delay such that signals reflected from its end facet are attenuated by the modulator. The apparatus is suitable for use as an isolator for a light source in a high-speed optical fiber data transmission system.

Abstract: A monolithically integrated electroabsorption modulator/optical amplifier is described which is prepared using a lateral bandgap control technique with a planar III-V compund semiconductor substrate. The described device evidences a bandgap shift in excess of 60 nanometers, so indicating its applicability for integration of modulators and lasers or amplifiers. The device is fabricated by atmospheric pressure metal organic condensed vapor deposition growth of gallium indium arsenise/gallium indium aresenide phosphide strained quantum wells on ridges deposited on the substrate.

Abstract: A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers.

Abstract: A superlattice structure composed of at least two kinds of crystal layers, such as semiconductor layers, being different in bandgap, being combined alternately with each others, and the physical parameters of the layers being designed so that phase differences of reflected waves of injected electrons or holes are substantially equal to .pi. multiplied by an odd numbered integer so that the energy potential barrier height is effectively increased. When used in semiconductor lasers, it allows the confining efficiency of injected carriers to be noticeably improved.

Abstract: A target unit comprises equally spaced and crosswise arranged photoelectric converters responsive to a visible or invisible light pulse beam hitting the unit at an area including a center point for producing output pulses. The converters are disposed on four sides of the cross point, and divided into four adjacent groups, adjacent to the cross point and four remote groups, remote therefrom. The area is capable of covering the adjacent group converters but no more of the remote group ones when the center point coincides with the cross point. Counts of the output pulses for each adjacent group and for the associated remote group are added. The sum for the adjacent and remote group pair is subtracted from the sum for the related pair to drive an indicator for simulating the distance and the azimuth of the center point relative to the cross point.