Abstract: An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.

Abstract: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

Abstract: A magnetic film plating apparatus employs a dip method that allows relatively good escape of bubbles and does not require a wide footprint and, even when a ferromagnetic material is used for an anode, can form a magnetic film on a substrate surface while minimizing the influence of the anode on the uniformity of magnetic anisotropy in the magnetic film. The magnetic film plating apparatus includes a plating tank for holding a plating solution, an anode vertically disposed in the plating tank at a position to be immersed in the plating solution, a substrate holder for holding a substrate W and positioning the substrate W opposite the anode, and a magnetic field generator, disposed outside the plating tank, for generating a magnetic field around the substrate W held by the substrate holder and positioned opposite the anode.

Abstract: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.

Abstract: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.

Abstract: There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.

Abstract: A plating apparatus has an ashing unit (300) configured to perform an ashing process on a resist (502) applied on a surface of a seed layer (500) formed on a substrate (W), and a pre-wetting section (26) configured to provide hydrophilicity to a surface of the substrate after the ashing process. The plating apparatus includes a pre-soaking section (28) configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate. The plating apparatus also includes a plating unit (34) configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film (504) on the surface of the seed layer formed on the substrate.

Abstract: A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

Abstract: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

Abstract: An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.

Abstract: A plating apparatus and method bubbles generated at the plating surfaces easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved. The plating apparatus has a cassette table for loading a cassette in which a substrate having a plating surface is contained. An aligner for aligning the substrate, a rinser-dryer for rinsing and drying the substrate, and a plating unit for plating the substrate are also provided. The plating unit includes a plating vessel containing a plating solution, and a holder holds the substrate to immerse the substrate in the plating solution in the plating vessel. The plating surface is exposed to a nozzle which ejects the plating solution toward the plating surface.

Abstract: A plating method can fill a plated metal into interconnect recesses at a higher rate without forming voids in the plated metal embedded in the interconnect recesses. The plating method includes: preparing a substrate having interconnect recesses in a surface; carrying out first pretreatment of the substrate by immersing the substrate in a first pretreatment solution containing an accelerator, a metal ion and an acid; carrying out second pretreatment of the substrate by immersing the substrate in a second pretreatment solution containing an additive which inhibits the effect of the accelerator contained in the first pretreatment solution, and not containing an accelerator; and then carrying out electroplating of the substrate surface by using a plating solution containing at least a metal ion, an acid and a suppressor, and not containing an accelerator, thereby filling the plated metal into the interconnect recesses.

Abstract: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

Abstract: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

Abstract: A magnetic film plating apparatus employs a dip method that allows relatively good escape of bubbles and does not require a wide footprint and, even when a ferromagnetic material is used for an anode, can form a magnetic film on a substrate surface while minimizing the influence of the anode on the uniformity of magnetic anisotropy in the magnetic film. The magnetic film plating apparatus includes a plating tank for holding a plating solution; an anode vertically disposed in the plating tank at a position to be immersed in the plating solution; a substrate holder for holding a substrate W and positioning the substrate W opposite the anode; and a magnetic field generator, disposed outside the plating tank, for generating a magnetic field around the substrate W held by the substrate holder and positioned opposite the anode.

Abstract: A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

Abstract: A plating apparatus has an ashing unit (300) configured to perform an ashing process on a resist (502) applied on a surface of a seed layer (500) formed on a substrate (W), and a pre-wetting section (26) configured to provide hydrophilicity to a surface of the substrate after the ashing process. The plating apparatus includes a pre-soaking section (28) configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate. The plating apparatus also includes a plating unit (34) configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film (504) on the surface of the seed layer formed on the substrate.

Abstract: A plating apparatus according to the present invention has a plating tank for holding a plating solution, an anode disposed so as to be immersed in the plating solution in the plating tank, a regulation plate disposed between the anode and a plating workpiece disposed so as to face the anode, and a plating power supply for supply a current between the anode and the plating workpiece to carry out plating. The regulation plate is disposed so as to separate the plating solution held in the plating tank into a plating solution on the anode side and a plating solution on the plating workpiece side, and a through-hole group having a large number of through-holes is formed in the regulation plate.

Abstract: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.

Abstract: An anode holder is used to hold an anode in a plating tank. The anode holder includes a bar having a conductive portion connected to a power source, a conductive anode shaft attached to the bar, and an anode connected to the conductive anode shaft. The conductive anode shaft includes an external thread portion provided at an end of the conductive anode shaft, an O-ring, and a step portion provided between the O-ring and the external thread portion. The step portion has a diameter larger than a diameter of the external thread portion but smaller than a diameter of the O-ring. The anode includes an internal thread hole to which the external thread portion of the conductive anode shaft is screwed. The anode also includes a receiving portion for receiving the step portion of the conductive anode shaft in a state such that the O-ring of the conductive anode shaft is brought into contact with an inner surface of the receiving portion.