Abstract: Provided are a method for producing a finish polishing pad and the polishing pad which allow formation of a stable film and enables polishing with fewer polishing scratches. The method includes the steps of: dissolving a composition for forming polyurethane resin film containing a polyurethane resin and an additive(s) in a solvent capable of dissolving the resin; removing an insoluble component(s) to make the content of the insoluble component(s) in the solution less than 1% by mass relative to the total mass of the composition; adding a poor solvent to the solution from which the insoluble component(s) has(have) been removed, followed by mixing, the amount of the poor solvent added being calculated according to a defined Formula 1; and forming a film from the mixture solution on the film formation substrate by a wet coagulation method, to thereby form the polyurethane resin film.

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).

Abstract: Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape. The polyurethane-polyurea resin molded body has a ratio of closed cells of 60 to 98%. The polyurethane-polyurea resin molded body has a ratio tan ? of a loss modulus E? to a storage modulus E? (loss modulus/storage modulus) of 0.15 to 0.30. The storage modulus E? is 1 to 100 MPa. The polyurethane-polyurea resin molded body has a density D of 0.4 to 0.8 g/cm3.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: Provided are a method for producing a finish polishing pad and the polishing pad which allow formation of a stable film and enables polishing with fewer polishing scratches. The method comprises the steps of: dissolving a composition for forming polyurethane resin film containing a polyurethane resin and an additive(s) in a solvent capable of dissolving the resin; removing an insoluble component(s) to make the content of the insoluble component(s) in the solution less than 1% by mass relative to the total mass of the composition; adding a poor solvent to the solution from which the insoluble component(s) has(have) been removed, followed by mixing, the amount of the poor solvent added being calculated according to a defined Formula 1; and forming a film from the mixture solution on the film formation substrate by a wet coagulation method, to thereby form the polyurethane resin film.

Abstract: Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape. The polyurethane-polyurea resin molded body has a ratio of closed cells of 60 to 98%. The polyurethane-polyurea resin molded body has a ratio tan ? of a loss modulus E? to a storage modulus E? (loss modulus/storage modulus) of 0.15 to 0.30. The storage modulus E? is 1 to 100 MPa. The polyurethane-polyurea resin molded body has a density D of 0.4 to 0.8 g/cm3.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).

Abstract: When channel setup is carried out under poor receiving condition, the previous channel information that has been stored on a channel map in the channel setup carried out under normal receiving condition is replaced with the later channel information that is stored on the channel map including less acquired channel information formed in the channel setup carried out later. Existence of broadcast signal is judged only on channels other than channels that are registered based on the fact that the channels include a broadcast signal on a channel map stored in the previous channel setup, and the channel information of the broadcast signal detected later is registered additionally on the channel map in a flash memory as the channel including the broadcast signal.

Abstract: When channel setup is carried out later under poor receiving condition, the previous channel information that has been stored on a channel map in the channel setup carried out under normal receiving condition is replaced with the later channel information that is stored on the channel map including less acquired channel information formed in the channel setup carried out later. Existence of broadcast signal is judged only on channels other than channels that are registered based on the fact that the channels include a broadcast signal on a channel map stored in the previous channel setup, and the channel information of the broadcast signal detected later is registered additionally on the channel map in a memory means as the channel including the broadcast signal.

Abstract: A package of polyurethane elastic yarn for heat bonding which weighs more than 1 kg and measures such that the diameter-to-width ratio is greater than 0.5 and which is obtained from polyurethane elastic yarn by giving it 3.0-10.0 wt % of a finishing agent and then winding it up, said finishing agent is polypropylene glycol-based polyol used alone or composed of component (A) which is a polypropylene glycol-based polyol and component (B) which is a reaction product of a polypropylene glycol-based polyol and an organic diisocyanate compound. The finishing agent contains component (B) in an amount less than 30 wt % and have an apparent viscosity of 50-250 mPa·s at 30° C. and a surface tension of 30-45 dyn/cm.

Abstract: The present invention relates to a method for separating and concentrating acidic peptide, especially phosphopeptide having a phosphoserine residue, from a peptide mixture prepared by digesting casein with protease.