Patents by Inventor Fumio Mizuno
Fumio Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11957475Abstract: A biometric information processing device (1) includes a brain wave detecting unit (10), a control unit (20), and a movement assisting unit (30). The brain wave detecting unit (10) detects biometric information in at least one brain region from among a plurality of brain regions that are selectable in accordance with a body part that is a target of function recovery or function improvement. The control unit (20) determines, based on the detected biometric information, at least one activity state in the brain including the location of the brain region(s) that is (are) activated in a subject while attempting to move the body part, and an activation level of such activated brain region(s). When the control unit (20) determines that the at least one activated state of the brain satisfies a predetermined condition, the movement assisting unit (30) executes a predetermined motion to assist movement of the body part.Type: GrantFiled: May 15, 2017Date of Patent: April 16, 2024Assignee: KEIO UNIVERSITYInventors: Junichi Ushiba, Fumio Liu, Kenichi Takasaki, Atsuko Nishimoto, Miho Hiramoto, Katsuhiro Mizuno, Meigen Liu, Toshiyuki Fujiwara
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Patent number: 8304724Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: GrantFiled: August 2, 2010Date of Patent: November 6, 2012Assignee: Hitachi, Ltd.Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Patent number: 8217466Abstract: Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.Type: GrantFiled: August 1, 2006Date of Patent: July 10, 2012Assignee: Jjtech Co., Ltd.Inventors: Kanji Otsuka, Fumio Mizuno, Munekazu Takano, Tamotsu Usami
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Publication number: 20100314541Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: ApplicationFiled: August 2, 2010Publication date: December 16, 2010Applicant: HITACHI, LTD.Inventors: Fumihiro SASAJIMA, Osamu KOMURO, Fumio MIZUNO
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Patent number: 7804111Abstract: The object of the invention is to provide a semiconductor device including signal-transmission interconnections preferable for transmitting high frequency signal and capability to adjust characteristics of the above signal-transmission interconnections. A semiconductor device according to the present invention consists of a signal-transmission interconnection 20 for transmission of signals, a MOS capacitance element 10 having a gate electrode connected to the signal-transmission interconnection 20, a first voltage-applying interconnection 30 connected to a source and a drain of the MOS capacitance element 10 and applying a voltage to the source and the drain of the MOS capacitance element 10, a second voltage-applying interconnection 40 connected to a well of the MOS capacitance element 10, and applying a voltage to the well of said first MOS capacitance element 10.Type: GrantFiled: October 10, 2006Date of Patent: September 28, 2010Assignee: Tama-TLO Ltd.Inventors: Kanji Otsuka, Munekazu Takano, Fumio Mizuno, Saburo Yokokura, Tsuneo Ito, Yuko Tanba, Yutaka Akiyama
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Patent number: 7791021Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: GrantFiled: September 11, 2008Date of Patent: September 7, 2010Assignee: Hitachi, Ltd.Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Patent number: 7642514Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: GrantFiled: December 27, 2007Date of Patent: January 5, 2010Assignee: Hitachi, Ltd.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Publication number: 20090108955Abstract: The object of the invention is to provide a semiconductor device including signal-transmission interconnections preferable for transmitting high frequency signal and capability to adjust characteristics of the above signal-transmission interconnections. A semiconductor device according to the present invention consists of a signal-transmission interconnection 20 for transmission of signals, a MOS capacitance element 10 having a gate electrode connected to the signal-transmission interconnection 20, a first voltage-applying interconnection 30 connected to a source and a drain of the MOS capacitance element 10 and applying a voltage to the source and the drain of the MOS capacitance element 10, a second voltage-applying interconnection 40 connected to a well of the MOS capacitance element 10, and applying a voltage to the well of said first MOS capacitance element 10.Type: ApplicationFiled: October 10, 2006Publication date: April 30, 2009Inventors: Kanji Otsuka, Munekazu Takano, Fumio Mizuno, Saburo Yokokura, Tsuneo Ito, Yuko Tanba, Yutaka Akiyama
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Publication number: 20090096029Abstract: Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.Type: ApplicationFiled: August 1, 2006Publication date: April 16, 2009Inventors: Kanji Otsuka, Fumio Mizuno, Munekazu Takano, Tamotsu Usami
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Publication number: 20090020699Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: ApplicationFiled: September 11, 2008Publication date: January 22, 2009Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Patent number: 7435959Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: GrantFiled: May 14, 2007Date of Patent: October 14, 2008Assignee: Hitachi, Ltd.Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Publication number: 20080116376Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample, based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: ApplicationFiled: December 27, 2007Publication date: May 22, 2008Applicant: HITACHI, LTD.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Patent number: 7329868Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: GrantFiled: September 6, 2006Date of Patent: February 12, 2008Assignee: Hitachi, Ltd.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Publication number: 20070290697Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: ApplicationFiled: May 14, 2007Publication date: December 20, 2007Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Patent number: 7217923Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: GrantFiled: August 5, 2005Date of Patent: May 15, 2007Assignee: Hitachi, Ltd.Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Publication number: 20070023657Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: ApplicationFiled: September 6, 2006Publication date: February 1, 2007Applicant: HITACHI, LTD.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Patent number: 7109485Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: GrantFiled: April 19, 2005Date of Patent: September 19, 2006Assignee: Hitachi, Ltd.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Publication number: 20050277029Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: ApplicationFiled: August 5, 2005Publication date: December 15, 2005Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno
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Patent number: 6936818Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.Type: GrantFiled: October 9, 2003Date of Patent: August 30, 2005Assignee: Hitachi, Ltd.Inventors: Atsushi Takane, Haruo Yoda, Hideo Todokoro, Fumio Mizuno, Shoji Yoshida, Mitsuji Ikeda, Mitsugu Sato, Makoto Ezumi
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Patent number: 6936819Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.Type: GrantFiled: June 2, 2004Date of Patent: August 30, 2005Assignee: Hitachi, Ltd.Inventors: Fumihiro Sasajima, Osamu Komuro, Fumio Mizuno