Patents by Inventor Fumio Nakata

Fumio Nakata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a multi-wavelength semiconductor image sensor
    Patent number: 6790701
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: September 14, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • Multi-wavelength semiconductor image sensor
    Patent number: 6700111
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: March 2, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • Multi-wavelength semiconductor image sensor
    Publication number: 20030034494
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Application
    Filed: September 6, 2002
    Publication date: February 20, 2003
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • Method of manufacturing a multi-wavelength semiconductor image sensor
    Publication number: 20030034537
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Application
    Filed: September 6, 2002
    Publication date: February 20, 2003
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • Multi-wavelength semiconductor image sensor and method of manufacturing the same
    Patent number: 6465860
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Grant
    Filed: August 31, 1999
    Date of Patent: October 15, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • MULTI-WAVELENGTH SEMICONDUCTOR IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20020135034
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Application
    Filed: August 31, 1999
    Publication date: September 26, 2002
    Inventors: KEITARO SHIGENAKA, FUMIO NAKATA
  • Tin-indium antimonide infrared detector
    Patent number: 5497029
    Abstract: A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.
    Type: Grant
    Filed: September 13, 1994
    Date of Patent: March 5, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuyoshi Fukuda, Fumio Nakata, Keitaro Shigenaka, Keijiro Hirahara