Abstract: A ceramic sintered body according to the present invention comprises: silicon carbide and aluminum nitride, wherein a weight ratio of the aluminum nitride relative to a total weight ratio of the silicon carbide and the aluminum nitride is greater than 10% and 97% or smaller, and a bulk density is greater than 3.18 g/cm3.

Abstract: A ceramic sintered body according to the present invention comprises: silicon carbide and aluminum nitride, wherein a weight ratio of the aluminum nitride relative to a total weight ratio of the silicon carbide and the aluminum nitride is greater than 10% and 97% or smaller, and a bulk density is greater than 3.18 g/cm3.

Abstract: A ceramic sintered body according to the present invention comprises: silicon carbide and aluminum nitride, wherein a weight ratio of the aluminum nitride relative to a total weight ratio of the silicon carbide and the aluminum nitride is greater than 10% and 97% or smaller, and a bulk density is greater than 3.18 g/cm3.

Abstract: A method of producing a sintered silicon carbide using a reaction sintering method, comprising: (1) dissolving and dispersing a silicon carbide powder in a solvent to produce a mixed powder slurry, (2) flowing the resulted mixed powder into a mold and drying it to obtain a green body, (3) temporarily sintering the green body in one of a vacuum atmosphere or inert gas atmosphere at 1200 to 1900° C. to obtain a temporarily sintered first body, (4) impregnating the resulted temporarily sintered first body with a phenol resin as a carbon source, (5) temporarily sintering the resulted carbon source-impregnated temporarily sintered first body in one of a vacuum atmosphere or inert gas atmosphere at 900 to 1400° C.

Abstract: A method of producing a silicon carbide sintered body jig using a reaction sintering method, comprising: (a)dispersing a silicon carbide powder and an organic substance as a carbon source in a solvent, to produce a mixed slurry powder, (b) pouring the resulted slurry powder into a mold and drying this to obtain a green body, (c) temporarily-sintering the resulted green body under a vacuum atmosphere at 1800° C., to obtain a temporarily-sintered body, (d) temporarily-molding said temporarily-sintered body, to obtain a temporarily-molded body, (e) impregnating a melted metal silicon into the resulted temporarily-molded body by a capillary phenomenon and reacting free carbon in said temporarily-molded body with silicon sucked into said temporarily-molded body by a capillary phenomenon, to obtain a silicon carbide sintered body, and (f) subjecting the resulted silicon carbide sintered body to precise processing, to obtain a silicon carbide sintered body jig.

Abstract: A method of producing a silicon carbide sintered body for heaters, which contains 500 ppm or more of nitrogen, including obtaining slurry-like mixed powder obtained by dispersing silicon carbide powder in a solvent; obtaining a green body by pouring the mixed powder in a shaping die followed by drying; first heating step of heating the green body under a vacuum atmosphere up to a temperature in the range of 550 to 650° C.; and second heating step of, after further heating to a temperature equal to or higher than 1500° C. under a nitrogen gas atmosphere, holding at the temperature under the nitrogen gas atmosphere to obtain a silicon carbide sintered body. And a silicon carbide sintered body for heaters, which has a nitrogen content of 500 ppm or more and the porosity of 32% by volume or less.

Abstract: The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is heated at a temperature rising rate of 3 to 5° C./min up to heating treatment temperature selected in the range of 2200 to 2300° C. under an argon atmosphere, kept at the same heating treatment temperature for 3 hours, and cooled at a temperature lowering rate of 2 to 3° C./min down to 1000° C.

Abstract: A silicon carbide sintered body, wherein the porosity obtained from areas of silicon carbide particles and silicon particles in a sectional polished surface of the silicon carbide sintered body is greater than 15% and less than 30%, when the porosity (%) equals (the area of silicon particles/(the area of silicon particles+the area of silicon carbide particles))×100; and a content of residual silicon is less than 4% to a total volume of the silicon carbide sintered body.

Abstract: A sputtering target which is prepared from a material containing silicon carbide and silicon wherein a volume ratio of silicon carbide ranges from 50% to 70%, when it is defined in such that a volume ratio (%) of silicon carbide=the whole volume of silicon carbide/(the whole volume of silicon carbide+the whole volume of silicon)×100.

Abstract: A method of producing a silicon carbide sintered body jig using a reaction sintering method, comprising: (a)dispersing a silicon carbide powder and an organic substance as a carbon source in a solvent, to produce a mixed slurry powder, (b) pouring the resulted slurry powder into a mold and drying this to obtain a green body, (c) temporarily-sintering the resulted green body under a vacuum atmosphere at 1800° C., to obtain a temporarily-sintered body, (d) temporarily-molding said temporarily-sintered body, to obtain a temporarily-molded body, (e) impregnating a melted metal silicon into the resulted temporarily-molded body by a capillary phenomenon and reacting free carbon in said temporarily-molded body with silicon sucked into said temporarily-molded body by a capillary phenomenon, to obtain a silicon carbide sintered body, and (f) subjecting the resulted silicon carbide sintered body to precise processing, to obtain a silicon carbide sintered body jig.

Abstract: A method of producing a sintered silicon carbide using a reaction sintering method, comprising: (1) dissolving and dispersing a silicon carbide powder in a solvent to produce a mixed powder slurry, (2) flowing the resulted mixed powder into a mold and drying it to obtain a green body, (3) temporarily sintering the green body in one of a vacuum atmosphere or inert gas atmosphere at 1200 to 1900° C. to obtain a temporarily sintered first body, (4) impregnating the resulted temporarily sintered first body with a phenol resin as a carbon source, (5) temporarily sintering the resulted carbon source-impregnated temporarily sintered first body in one of a vacuum atmosphere or inert gas atmosphere at 900 to 1400° C.

Abstract: The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is heated at a temperature rising rate of 3 to 5° C./min up to heating treatment temperature selected in the range of 2200 to 2300° C. under an argon atmosphere, kept at the same heating treatment temperature for 3 hours, and cooled at a temperature lowering rate of 2 to 3° C./min down to 1000° C.

Abstract: A method of producing a wafer comprising conducting a baking treatment on a sintered silicon carbide cut in the form of wafer. An embodiment in which the temperature for the above-mentioned baking treatment is 1350° C. or more, embodiments in which the temperature for the above-mentioned baking treatment is 1400 to 1550° C. and the pressure for the above-mentioned baking treatment is 10−4 Torr or less, and the like are preferable. A wafer which can be produced by the above-mentioned method of producing a water. Embodiments in which the above-mentioned flexural strength measured by a flexural test method (JIS 1601) is 700 MPa or more, the above-mentioned element composition ratio Si/C in all parts is 0.48/0.52 to 0.52/0.48, and the above-mentioned density is 2.9 g/cm3 or more. A high quality wafer improving thermal shock resistance and generating no crack by thermal shock, and a method which can produce this wafer efficiently are provided.

Abstract: It is an object of the present invention to provide a method for simply producing a high purity silicon carbide sintered body having no remaining metal silicon and excellent heat resistance. A method for producing a silicon carbide sintered body of the present invention comprises the steps of: preparing a slurry by dispersing silicon carbide powder in a solvent; forming a molded body by pouring the slurry into a mold and effecting calcination for the slurry in a vacuum atmosphere or in an inert gas atmosphere; and sealing pores within the calcined molded body by impregnating the pores with high purity metal silicon molten by heating, and allowing the high purity metal silicon and carbon contained in the molded body to react on each other in the pores so as to produce silicon carbide.

Abstract: The present invention provides: a fabrication method of a silicon carbide sintered body, including a step of fabricating a mixed powder slurry by dissolving or dispersing silicon carbide powder, at least one organic material composed of a nitrogen source, and at least one organic material composed of a carbon source or carbon powder in a solvent, a step of fabricating a green body by pouring the mixed powder slurry into a mold and drying and a step of filling pores in the green body by immersing the green body in high purity metallic silicon that has been heated to 1450 to 1700° C. in a vacuum atmosphere or inert gas atmosphere and melted, and generating silicon carbide by reacting silicon sucked up into the pores in the green body by capillary action with free carbon in the green body; and a silicon carbide sintered body obtained by a reaction sintering method, having a density of 2.90 g/cm3 or more and a volume resistivity of 100 &OHgr;·cm or less, and containing nitrogen at 150 ppm or more.

Abstract: A silicon carbide powder which can increase the densities of a green body and a sintered silicon carbide, a method of producing a green body having a high density and excellent handling properties, and a method of producing a sintered silicon carbide having a high density, in which methods the silicon carbide powder is used. The silicon carbide powder includes at a particulate volume ratio of 20% to 80% a silicon carbide powder whose model ratio is 1.7 &mgr;m to 2.7 &mgr;m and a silicon carbide powder whose model ratio is 10.5 &mgr;m to 21.5 &mgr;m. The silicon carbide powder is used in the method of producing a green body and in the method of producing a sintered silicon carbide powder.

Abstract: A method of producing a wafer comprising conducting a baking treatment on a sintered silicon carbide cut in the form of wafer. An embodiment in which the temperature for the above-mentioned baking treatment is 1350° C. or more, embodiments in which the temperature for the above-mentioned baking treatment is 1400 to 1550° C. and the pressure for the above-mentioned baking treatment is 10−4 Torr or less, and the like are preferable. A wafer which can be produced by the above-mentioned method of producing a water. Embodiments in which the above-mentioned flexural strength measured by a flexural test method (JIS 1601) is 700MPa or more, the above-mentioned element composition ratio Si/C in all parts is 0.48/0.52 to 0.52/0.48, and the above-mentioned density is 2.9g/cm3 or more.

Abstract: It is an object of the present invention to provide a method for simply producing a high purity silicon carbide sintered body having no remaining metal silicon and excellent heat resistance. A method for producing a silicon carbide sintered body of the present invention comprises the steps of: preparing a slurry by dispersing silicon carbide powder in a solvent; forming a molded body by pouring the slurry into a mold and effecting calcination for the slurry in a vacuum atmosphere or in an inert gas atmosphere; and sealing pores within the calcined molded body by impregnating the pores with high purity metal silicon molten by heating, and allowing the high purity metal silicon and carbon contained in the molded body to react on each other in the pores so as to produce silicon carbide.

Abstract: A method for producing a sintered silicon carbide body which has excellent strength and the like and in which cracking and breaking are prevented is provided. In the method for producing a sintered silicon carbide body, metallic silicon is, in a vacuum atmosphere or in a non-oxidizing atmosphere, impregnated into a molded body containing silicon carbide and carbon so as to form an impregnated body, and the impregnated body is cooled in a state of being provided with a temperature distribution of 0.1-1.5° C./cm.

Abstract: A high-temperature ceramic filter having a three-dimensional reticulated skeleton structure is prepared by applying a ceramic slurry to a synthetic resin foam having an open cell three-dimensional reticulated skeleton structure, followed by drying and firing. The ceramic slurry contains 20-40 parts by weight of aluminum titanate, 40-60 parts by weight of mullite, 2-20 parts by weight of alumina, and agalmatolite. The filter is useful for the filtration of molten metals.