Patents by Inventor Fumio Tsujino

Fumio Tsujino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
    Patent number: 6733553
    Abstract: The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: May 11, 2004
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Takanori Kido, Fumio Tsujino
  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Patent number: 6478836
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30 c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30 c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: November 12, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
    Publication number: 20020059755
    Abstract: The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.
    Type: Application
    Filed: April 12, 2001
    Publication date: May 23, 2002
    Inventors: Takanori Kido, Fumio Tsujino
  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Patent number: 6387139
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: October 3, 2001
    Date of Patent: May 14, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
    Publication number: 20020032989
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt.%. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Application
    Filed: October 3, 2001
    Publication date: March 21, 2002
    Applicant: SHOWA DENKO K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Polishing material composition and polishing method for polishing LSI devices
    Patent number: 6299659
    Abstract: A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 9, 2001
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Fumio Tsujino, Kagetaka Ichikawa, Nobuo Uotani