Abstract: A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.

Abstract: A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.

Abstract: A semiconductor device and a method of manufacturing the same, wherein there are provided, on a semiconductor substrate of a first conductivity type, a first and a second epitaxial layer each having a second conductivity type opposite to the first conductivity type. A plurality of regions are defined in the entire area of the epitaxial layer by being isolated by means of an isolation layer of the first conductivity type which extends from the surface of the second epitaxial layer to the semiconductor substrate. Furthermore, a first buried layer of the second conductivity type is formed in each of the isolated regions in such a manner as to extend in the first epitaxial layer and semiconductor substrate so that a transistor can be formed on each first buried layer.