Abstract: According to one embodiment, a sensor includes a detection device and a circuit portion. The detection device includes a first detection portion and a second detection portion. The first detection portion includes a first detection element. The first detection element includes a first conductive member and a first detection member. The second detection portion includes a second detection element. The second detection element includes a second conductive member and a second detection member. The circuit portion is configured to execute a first detection portion operation for outputting a first detection result corresponding to a first detection value based on the first detection member when a first current is supplied to the first conductive member. In a case where a first evaluation value is not within a first range, the circuit portion is configured to execute a second detection portion operation by the second detection portion.

Abstract: According to one embodiment, a sensor includes a detection device, a switch circuit, and a detection circuit. The detection device includes a first detection section and a second detection section. The first detection section includes a first detection element. The first detection element includes a first conductive member and a first resistance member. The second detection section includes a second detection element. The second detection element includes a second conductive member and a second resistance member. In a first operation, the switch circuit is configured to supply a first current to the first conductive member and not to supply the first current to the second conductive member, and the detection circuit is configured to output a first signal corresponding to a difference between a first electrical resistance of the first resistance member and a second electrical resistance of the second resistance member.

Abstract: According to one embodiment, a sensor system includes a pipe and a sensor. The sensor is configured to detect a detection target substance in the pipe. The sensor includes a base, a first detection part, and a second detection part. The base includes a first base region and a second base region. The first detection part includes a first support part, a first connection part, and a first detection element. The second detection art includes a second support part, a second connection part, and a second detection element.

Abstract: According to one embodiment, a sensor includes an element part. The element part includes a base body, a first detection support part fixed to the base body, a first detection connection part including a first connection resistance layer and supported by the first detection support part, a first support part fixed to the base body, a first structure body, a first connection part, and a film part. The first structure body includes a first end part and a first other end part. The first end part is supported by the first support part. The first connection part is supported by the first other end part. The film part includes a first detection part and a first part. The first detection part is supported by the first detection connection part. The first part is supported by the first connection part. The film part includes a film part resistance layer.

Abstract: According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Abstract: According to one embodiment, a pressure sensor includes a base body, a supporter, a film part, a first electrode, and a second electrode. The supporter is fixed to the base body. The film part is separated from the base body. The film part includes first, second, and third partial regions, and a rim portion. The rim portion is supported by the supporter. The second partial region is between the first partial region and the rim portion. The third partial region is between the second partial region and the rim portion. The first electrode is provided between the base body and the first partial region and between the base body and the second partial region. The first electrode is fixed to the base body. The second electrode is provided between the first electrode and the first partial region and between the first electrode and the second partial region.

Abstract: Provided is a die casting machine and die casting machine control method that are able to change the operation of a plunger at an appropriate timing. A die casting machine operates a plunger such that the plunger moves forward, detects that molten metal extruded from a sleeve by the forward movement of the plunger has arrived at a cavity, determines a deceleration starting position and a intensification starting position for changing the operation of the plunger, using, as a reference (reference position Ls), the position of the plunger 15 at the time when it is detected that molten metal has arrived at the cavity, and, when the plunger moves to the deceleration starting position and intensification starting position, changes the operation of the plunger to operations corresponding to the respective positions.

Abstract: According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Abstract: According to one embodiment, a pressure sensor includes a base body, a supporter, a film part, a first electrode, and a second electrode. The supporter is fixed to the base body. The film part is separated from the base body. The film part includes first, second, and third partial regions, and a rim portion. The rim portion is supported by the supporter. The second partial region is between the first partial region and the rim portion. The third partial region is between the second partial region and the rim portion. The first electrode is provided between the base body and the first partial region and between the base body and the second partial region. The first electrode is fixed to the base body. The second electrode is provided between the first electrode and the first partial region and between the first electrode and the second partial region.

Abstract: According to one embodiment, a pressure sensor is disclosed. The pressure sensor includes a substrate, and a first capacitor element. The first capacitor element includes a lower electrode provided on the substrate, an upper electrode disposed above the lower electrode, and a film provided over the lower electrode and upper electrode. The lower electrode and the upper electrode are between the substrate and the film. An absolute value of an amount of change in an electrostatic capacitance between the lower electrode and the upper electrode with respect to unit change in an ambient temperature of the first capacitor element is substantially zero.

Abstract: According to one embodiment, a pressure sensor is disclosed. The pressure sensor includes a substrate, and a first capacitor element. The first capacitor element includes a lower electrode provided on the substrate, an upper electrode disposed above the lower electrode, and a film provided over the lower electrode and upper electrode. The lower electrode and the upper electrode are between the substrate and the film. An absolute value of an amount of change in an electrostatic capacitance between the lower electrode and the upper electrode with respect to unit change in an ambient temperature of the first capacitor element is substantially zero.

Abstract: Provided is a die casting machine and die casting machine control method that are able to change the operation of a plunger at an appropriate timing. A die casting machine operates a plunger such that the plunger moves forward, detects that molten metal extruded from a sleeve by the forward movement of the plunger has arrived at a cavity, determines a deceleration starting position and a intensification starting position for changing the operation of the plunger, using, as a reference (reference position Ls), the position of the plunger 15 at the time when it is detected that molten metal has arrived at the cavity, and, when the plunger moves to the deceleration starting position and intensification starting position, changes the operation of the plunger to operations corresponding to the respective positions.

Abstract: According to one embodiment, an optical device includes an optical element and a via. The optical element is provided directly on a second main surface opposed to a first main surface of a semiconductor substrate. The via is aligned with the optical element and formed to extend halfway in a thickness direction from the first main surface of the semiconductor substrate.

Abstract: An optical semiconductor module includes a resin body having a first surface and an opposed second surface, an optical device having a third surface and a fourth surface opposite the third surface, the optical device comprising an optical element located at the fourth surface, the optical element capable of at least one of receiving light from, and transmitting light through, the third surface, a first terminal located at the first surface of the resin body, and an electrical connection between the first terminal and the optical device, the electrical connection embedded in the resin body.

Abstract: According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

Abstract: According to one embodiment, there is provided an optical coupling module including an optical device and an adaptor. The adaptor is attached to the optical device. The optical device has an optical element and a via. The optical element is placed on a first principal surface of a substrate. The via is placed in the substrate at a position corresponding to the optical element. The via has a first opening in a second principal surface of the substrate opposite to the first principal surface. The via does not reach the first principal surface. The adaptor has a guide hole having a second opening in a third principal surface of the adaptor opposite the second principal surface. The second opening corresponds to the first opening. The guide hole has a third opening in a fourth principal surface of the adaptor.

Abstract: According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

Abstract: An optical semiconductor module includes a resin body having a first surface and an opposed second surface, an optical device having a third surface and a fourth surface opposite the third surface, the optical device comprising an optical element located at the fourth surface, the optical element capable of at least one of receiving light from, and transmitting light through, the third surface, a first terminal located at the first surface of the resin body, and an electrical connection between the first terminal and the optical device, the electrical connection embedded in the resin body.

Abstract: According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

Abstract: According to one embodiment, an optical device includes an optical element and a via. The optical element is provided directly on a second main surface opposed to a first main surface of a semiconductor substrate. The via is aligned with the optical element and formed to extend halfway in a thickness direction from the first main surface of the semiconductor substrate.