Abstract: A chip peeling apparatus is provided that includes a housing having a seating surface for mounting a wafer, a recessed portion and a first vacuum suction hole in the seating surface, and a second vacuum suction hole, a blow hole and a protrusion in the recessed portion. The chip peeling apparatus further includes: a vacuum suction source that evacuates the first vacuum suction hole and the second vacuum suction hole; a pressure detector that detects a degree of vacuum of the second vacuum suction hole; a pressurization source that sends a fluid to the blow hole; a flow rate control valve; and a controller that determines a flow rate of the fluid to be sent to the blow hole, based on the degree of vacuum, and controls, via the flow rate control valve, the fluid sent from the pressurization source to flow at the determined flow rate.

Abstract: A mounting device includes: a bonding head configured to hold a first object, a bonding stage configured to hold a second object, and a dual-field-of-view (FOV) optical system including an image sensor configured to simultaneously capture an image of a first alignment mark on the first object and an image of a second alignment mark on the second object to obtain a first image. At least one of the bonding head and the bonding stage is configured to adjust a relative position between the first object and the second object based on the first image, and bond the first object to the second object.

Abstract: An apparatus for manufacturing a semiconductor device includes a bonding head configured to adsorb and hold a mounting component at a pick-up position, to move between the pick-up position and a mounting position, and to mount the mounting component on a substrate that is on a bonding stage; a camera configured to move together with the bonding head and to capture an image of the mounting component and an image of the substrate; an optical system configured to transmit light between the mounting component and the camera; a fiducial mark configured to move together with the camera in a capturing range of the camera; and a controller configured to correct a positional relationship between the mounting component and the substrate based on a first image including the fiducial mark and the mounting component and a second image including the fiducial mark and the substrate.

Abstract: A wafer bonding apparatus may include a first chuck, a second chuck, and a pressure device. The first chuck may include a hole formed through a central portion of the first chuck. The second chuck may have a hole formed through a central portion of the second chuck. The pressure device may be configured to pressurize a wafer toward the second chuck through the holes. An air bearing may be interposed between the pressure device and the first chuck to suppress a dislocation of the pressure device.

Abstract: A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moiré pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moiré pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.

Abstract: A wafer measurement apparatus for measuring a bonding strength of a bonded wafer includes a wafer holder to hold a bonded wafer into which a blade is inserted and where a crack occurs, a lighting assembly including a light source, a light source controller to select the light source of the lighting assembly for detection of the crack reflected in the bonded wafer, on photographing conditions, a photographing assembly to photograph the bonded wafer by using the photographing conditions corresponding to a wavelength of the light source, on sensitivity of the wavelength of the light source, and a calculator to select one photographing condition, transmit the selected photographing condition, and calculate bonding strength, on a crack distance from a blade edge, extracted from an image of the bonded wafer, to a crack edge.

Abstract: A wafer measurement apparatus for measuring a bonding strength of a bonded wafer includes a wafer holder to hold a bonded wafer into which a blade is inserted and where a crack occurs, a lighting assembly including a light source, a light source controller to select the light source of the lighting assembly for detection of the crack reflected in the bonded wafer, on photographing conditions, a photographing assembly to photograph the bonded wafer by using the photographing conditions corresponding to a wavelength of the light source, on sensitivity of the wavelength of the light source, and a calculator to select one photographing condition, transmit the selected photographing condition, and calculate bonding strength, on a crack distance from a blade edge, extracted from an image of the bonded wafer, to a crack edge.

Abstract: A method for adjusting inclination between wafers may include providing a first infrared light onto a first grid pattern in a first region in a first wafer and a second grid pattern in a second wafer, the first and second grid patterns overlapping, calculating a first distance in the first region between the first and second wafers based on a first Moiré pattern from the overlapping first and second grid patterns, providing a second infrared light onto a third grid pattern in a second region in the first wafer and a fourth grid pattern in the second wafer, the third and fourth grid patterns overlapping, calculating a second distance in the second region between the first and second wafers based on a second Moiré pattern from the overlapping third and fourth grid patterns, and adjusting relative inclination between the first and second wafers based on the first and second distances.

Abstract: A fluid pressure actuator including a fluid pressure cylinder having a first position detector and a second position detector, a piston body having a piston head and a rod, the piston head mounted on the rod and slidably accommodated in the fluid pressure cylinder, the rod including a first scale and a second scale, the first scale facing the first position detector and the first position detector configured to detect a position in a sliding direction of the piston body, the second scale facing the second position detector and the second position detector configured to detect a position of the rod in a rotation direction of the piston body, and a controller configured to perform a first positioning control of a position of the rod in the sliding direction and a second positioning control of the rod in the rotation direction may be provided.

Abstract: A fluid pressure actuator including a fluid pressure cylinder having a first position detector and a second position detector, a piston body having a piston head and a rod, the piston head mounted on the rod and slidably accommodated in the fluid pressure cylinder, the rod including a first scale and a second scale, the first scale facing the first position detector and the first position detector configured to detect a position in a sliding direction of the piston body, the second scale facing the second position detector and the second position detector configured to detect a position of the rod in a rotation direction of the piston body, and a controller configured to perform a first positioning control of a position of the rod in the sliding direction and a second positioning control of the rod in the rotation direction may be provided.