Abstract: In an encoding process of a moving image, a macro block as a unit of encoding is further divided into a plurality of DCT blocks or integer conversion blocks to detect an edge of each of the DCT blocks or the integer conversion blocks. Quantization control of the macro block is performed according to detected edge information.

Abstract: An encoding apparatus comprises, a detection unit configured to determine a characteristic of the image of each of a plurality of blocks and to detect whether visual degradation in each block is noticeable, a determination unit configured to determine a quantization parameter of each block based on a detection result, a transformation unit configured to perform orthogonal transformation of the block and quantization using the quantization parameter, an encoding unit configured to perform variable-length encoding of a transformation result, an inverse transformation unit configured to inversely transform the transformation result to generate a locally decoded image, and a calculation unit configured to calculate a reference value to change a criterion to determine the characteristic of the image, wherein the detection unit detects a block having noticeable visual degradation by changing the criterion in accordance with the reference value.

Abstract: An image synthesizing apparatus which is capable of, when synthesizing moving images, carrying out an image synthesizing process without bringing about increases in processing time and the amount of transfer to memory irrespective of the number of images to be synthesized. A preset number of frames are synthesized to obtain a first synthesized image. When an image of another frame is to be synthesized with the first synthesized image, an image of a predetermined frame used for the synthesis obtaining the first synthesized image is subtracted from the first synthesized image, and the image of the other frame is added to the first synthesized image to generate a synthesized image.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: An encoding apparatus comprises, a detection unit configured to determine a characteristic of the image of each of a plurality of blocks and to detect whether visual degradation in each block is noticeable, a determination unit configured to determine a quantization parameter of each block based on a detection result, a transformation unit configured to perform orthogonal transformation of the block and quantization using the quantization parameter, an encoding unit configured to perform variable-length encoding of a transformation result, an inverse transformation unit configured to inversely transform the transformation result to generate a locally decoded image, and a calculation unit configured to calculate a reference value to change a criterion to determine the characteristic of the image, wherein the detection unit detects a block having noticeable visual degradation by changing the criterion in accordance with the reference value.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: In a recording apparatus, an input moving image signal and sound signal are separately encoded. The encoded moving image signal and sound signal are recorded on a recording medium. When a recording stop instruction is input, recording of the encoded moving image signal is stopped while recording of the encoded sound signal is continued until a predetermined period elapses from stop of recording of the encoded moving image signal.

Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

Abstract: A semiconductor device includes a transmission power amplifier having cascaded MOSFET amplification stages disposed over a main surface of a semiconductor substrate. A CMOSFET control circuit controls the amplification stages. A first capacitor is also provided having upper and lower metal film electrodes formed over the main surface of the semiconductor substrate. The amplification stages are electrically coupled to one another via an inter-stage matching circuit which includes the first capacitor.

Abstract: A semiconductor device includes a transmission power amplifier having cascaded MOSFET amplification stages disposed over a main surface of a semiconductor substrate. A CMOSFET control circuit controls the amplification stages. A first capacitor is also provided having upper and lower metal film electrodes formed over the main surface of the semiconductor substrate. The amplification stages are electrically coupled to one another via an inter-stage matching circuit which includes the first capacitor.

Abstract: Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.

Abstract: In an encoding process of a moving image, a macro block as a unit of encoding is further divided into a plurality of DCT blocks or integer conversion blocks to detect an edge of each of the DCT blocks or the integer conversion blocks. Quantization control of the macro block is performed according to detected edge information.

Abstract: Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and above and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.

Abstract: In a recording apparatus, an input moving image signal and sound signal are separately encoded. The encoded moving image signal and sound signal are recorded on a recording medium. When a recording stop instruction is input, recording of the encoded moving image signal is stopped while recording of the encoded sound signal is continued until a predetermined period elapses from stop of recording of the encoded moving image signal.