Abstract: A cell stack device includes cells, a metal member containing chromium, a covering layer, and a bonding material. The cells include a first cell and the cells includes respective element portions. The covering layer covers the metal member. The bonding material is positioned between the first cell and the covering layer. The cell stack device satisfies any one of (1) The covering layer includes at least two portions having different thicknesses or different surface roughnesses at different positions. (2) A surface roughness of the covering layer is different from that of the metal member. (3) At least one element selected from the group consisting of Mn, Ti, Ca, and Al is positioned at the interface between the metal member and the covering layer, and the content ratio of the at least one element at the interface is different from that of the metal member or the covering layer.

Abstract: A composite member includes a base member and a covering layer. The base member includes a first surface not exposed to an oxidizing atmosphere and contains chromium. The covering layer covers the first surface and includes a first outer surface that is not exposed to the oxidizing atmosphere. At least one of the base member and the covering layer includes an exposed surface that is exposed to the oxidizing atmosphere. The surface roughness of the exposed surface is different from the surface roughness of the first surface or the first outer surface.

Abstract: A cell stack device includes a cell stack and an end current collector. The cell stack includes a plurality of cells arrayed therein. The end current collector is located in an end portion of the cell stack in an array direction of the plurality of cells. The end current collector includes a surface exposed to an oxidizing atmosphere covered with a covering material including manganese and a surface exposed to a reducing atmosphere covered with a film different from the covering material.

Abstract: A cell stack device including: a cell stack comprising a plurality of cells; a support member; and a fixing part between the support member and the at least one cell of the plurality of cells, wherein in a cross section including the support member, the fixing part, and the at least one cell, the fixing part includes: a first region arranged close to the support member; a second region closer to the at least one cell than the first region; and a third region between the first region and the second region, and at least one of the first region and the second region includes a porous region having a porosity that is higher than a porosity of the third region.

Abstract: A cell stack device including: a cell stack comprising a plurality of cells; a support member; and a fixing part between the support member and the at least one cell of the plurality of cells, wherein in a cross section including the support member, the fixing part, and the at least one cell, the fixing part includes: a first region arranged close to the support member; a second region closer to the at least one cell than the first region; and a third region between the first region and the second region, and at least one of the first region and the second region includes a porous region having a porosity that is higher than a porosity of the third region.

Abstract: The disclosure relates to an all-solid-state capacitor which has a high capacitance, is excellent in frequency characteristics, and can be made compact. An all-solid-state capacitor of the disclosure includes an inorganic solid electrolyte, and a pair of current collectors disposed so as to hold the inorganic solid electrolyte in between, the inorganic solid electrolyte having a main crystal phase of perovskite crystal structure that is expressed by a general formula, ABO3. A-site elements include two different elements, namely Li and M which is at least one of elements in Group 2 of the Periodic Table of Elements, and B-site elements include two different elements, namely Ti and M? which is at least one of elements in Group 5 of the Periodic Table of Elements.

Abstract: All-solid-state capacitor includes an inorganic solid electrolyte, and a pair of current collectors disposed so that the inorganic solid electrolyte is interposed therebetween. In the all-solid-state capacitor, the inorganic solid electrolyte has a polycrystalline structure composed of crystal particles and crystal grain boundaries formed between the crystal particles. In a first crystal particle included in the crystal particles, a domain located near the crystal grain boundaries is larger in size than a domain located near the center.

Abstract: A dielectric material having a rutile crystalline structure includes Ti as a major constituent metal element, and, as metal elements other than Ti, a metal element M1 which includes at least one selected from among Ni, Co, and elements belonging to Group 2 according to a periodic table, and a metal element M2 which includes at least one selected from among elements belonging to Group 5 and Group 6 in the periodic table, and, on a basis of a total amount of Ti, the metal element M1, and the metal element M2, a molar ratio x of the metal element M1 is in a range of 0.005 to 0.025 and a molar ratio y of the metal element M2 is in a range of 0.010 to 0.050.

Abstract: A dielectric material having a rutile crystalline structure includes Ti as a major constituent metal element, and, as metal elements other than Ti, a metal element M1 which includes at least one selected from among Ni, Co, and elements belonging to Group 2 according to a periodic table, and a metal element M2 which includes at least one selected from among elements belonging to Group 5 and Group 6 in the periodic table, and, on a basis of a total amount of Ti, the metal element M1, and the metal element M2, a molar ratio x of the metal element M1 is in a range of 0.005 to 0.025 and a molar ratio y of the metal element M2 is in a range of 0.010 to 0.050.

Abstract: All-solid-state capacitor includes an inorganic solid electrolyte, and a pair of current collectors disposed so that the inorganic solid electrolyte is interposed therebetween. In the all-solid-state capacitor, the inorganic solid electrolyte has a polycrystalline structure composed of crystal particles and crystal grain boundaries formed between the crystal particles. In a first crystal particle included in the crystal particles, a domain located near the crystal grain boundaries is larger in size than a domain located near the center.

Abstract: The disclosure relates to an all-solid-state capacitor which has a high capacitance, is excellent in frequency characteristics, and can be made compact. An all-solid-state capacitor of the disclosure includes an inorganic solid electrolyte, and a pair of current collectors disposed so as to hold the inorganic solid electrolyte in between, the inorganic solid electrolyte having a main crystal phase of perovskite crystal structure that is expressed by a general formula, ABO3. A-site elements include two different elements, namely Li and M which is at least one of elements in Group 2 of the Periodic Table of Elements, and B-site elements include two different elements, namely Ti and M? which is at least one of elements in Group 5 of the Periodic Table of Elements.

Abstract: To provide a light scatterer with high heat resistance, small light absorption and high light stability or heat resistance, and a backlight structure, an eye-safe semiconductor and the like using the light scatterer. There are provided a light-transmitting scatterer comprising a solidified body in which at least two or more oxide phases selected from a single metal oxide and a complex metal oxide are formed to be continuously and three-dimensionally entangled with each other; and a backlight structure and an eye-safe semiconductor laser, each using the light scatterer.