Abstract: One aspect of the present application relates to a polyphenylene ether resin composition including a modified polyphenylene ether compound (A) that is terminally modified with a substituent having a carbon-carbon unsaturated double bond, and a crosslinking-type curing agent (B) having two or more carbon-carbon unsaturated double bonds in each molecule, the modified polyphenylene ether compound (A) including a modified polyphenylene ether compound (A-1) having a specific structure, and a modified polyphenylene ether compound (A-2) having a specific structure.

Abstract: One aspect of the present application relates to a polyphenylene ether resin composition including a modified polyphenylene ether compound (A) that is terminally modified with a substituent having a carbon-carbon unsaturated double bond, and a crosslinking-type curing agent (B) having two or more carbon-carbon unsaturated double bonds in each molecule, the modified polyphenylene ether compound (A) including a modified polyphenylene ether compound (A-1) having a specific structure, and a modified polyphenylene ether compound (A-2) having a specific structure.

Abstract: Provided is a resin composition containing: a modified polyphenylene ether compound terminally modified with a substituent having an unsaturated carbon-carbon double bond; a cross-linking curing agent having an unsaturated carbon-carbon double bond in its molecule; a silane coupling agent having a phenylamino group in its molecule; and silica. A content of the silica is 60 to 250 parts by mass with respect to a total of 100 parts by mass of the modified polyphenylene ether compound and the cross-linking curing agent.

Abstract: Provided is a resin composition containing: a modified polyphenylene ether compound terminally modified with a substituent having an unsaturated carbon-carbon double bond; a cross-linking curing agent having an unsaturated carbon-carbon double bond in its molecule; a silane coupling agent having a phenylamino group in its molecule; and silica. A content of the silica is 60 to 250 parts by mass with respect to a total of 100 parts by mass of the modified polyphenylene ether compound and the cross-linking curing agent.

Abstract: One aspect of the present application relates to a polyphenylene ether resin composition including a modified polyphenylene ether compound (A) that is terminally modified with a substituent having a carbon-carbon unsaturated double bond, and a crosslinking-type curing agent (B) having two or more carbon-carbon unsaturated double bonds in each molecule, the modified polyphenylene ether compound (A) including a modified polyphenylene ether compound (A-1) having a specific structure, and a modified polyphenylene ether compound (A-2) having a specific structure.

Abstract: The present application relates to a polyphenylene ether resin composition containing (A) a modified polyphenylene ether compound having a terminal modified with a substituent having an unsaturated carbon-carbon double bond, (B) a crosslinking curing agent having an unsaturated carbon-carbon double bond in the molecule, and (C) a flame retardant. The flame retardant (C) contains at least a modified cyclic phenoxy phosphazene compound represented by formula (I).

Abstract: A core material is prepared, wherein the core material has an insulating layer, and a conductor pattern provided on a surface of the insulating layer. One or more prepreg materials are prepared. Each prepreg material includes a glass cloth, and first and second resin layers which are formed from a semi-cured resin with which the glass cloth is impregnated, and cover the opposite surfaces of the glass cloth, respectively. A laminated body is formed by placing the one or more prepreg materials on one another, such that one prepreg material out of the one or more prepreg materials is provided on the surface of the insulating layer of the core material to cover the conductor pattern. The laminated body is heated and pressed. The glass cloth has an opening ratio ranging from 3% to 15%.

Abstract: The carboxyl-containing resin in accordance with the present invention has a structure resulting from addition of a carboxylic acid to at least one of epoxy groups of a biphenyl novolac epoxy resin. The carboxylic acid includes at least a polybasic acid.

Abstract: A core material is prepared, wherein the core material has an insulating layer, and a conductor pattern provided on a surface of the insulating layer. One or more prepreg materials are prepared. Each prepreg material includes a glass cloth, and first and second resin layers which are formed from a semi-cured resin with which the glass cloth is impregnated, and cover the opposite surfaces of the glass cloth, respectively. A laminated body is formed by placing the one or more prepreg materials on one another, such that one prepreg material out of the one or more prepreg materials is provided on the surface of the insulating layer of the core material to cover the conductor pattern. The laminated body is heated and pressed. The glass cloth has an opening ratio ranging from 3% to 15%.

Abstract: The present invention provides a resin composition for resist to be efficiently formed into a cured product with high properties of crack resistance, bulge resistance, protrusion resistance, and the like for filling a through-hole, a via hole, or the like with the cured product. The resin composition for masks in accordance with the present invention contains a first resin and a second resin. The first resin is prepared by an addition reaction of polybasic acid anhydride with an adduct of an ethylenically unsaturated compound having a carboxyl group and bifunctional epoxy resin. The second resin having; a group obtained by an addition reaction of an epoxy group with monocarboxylic acid; and a group obtained by addition reaction of an epoxy group with polybasic acid.

Abstract: A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.

Abstract: The carboxyl-containing resin in accordance with the present invention has a structure resulting from addition of a carboxylic acid to at least one of epoxy groups of a biphenyl novolac epoxy resin. The carboxylic acid includes at least a polybasic acid.

Abstract: The present invention provides a resin composition for resist to be efficiently formed into a cured product with high properties of crack resistance, bulge resistance, protrusion resistance, and the like for filling a through-hole, a via hole, or the like with the cured product. The resin composition for masks in accordance with the present invention contains a first resin and a second resin. The first resin is prepared by an addition reaction of polybasic acid anhydride with an adduct of an ethylenically unsaturated compound having a carboxyl group and bifunctional epoxy resin. The second resin having; a group obtained by an addition reaction of an epoxy group with monocarboxylic acid; and a group obtained by addition reaction of an epoxy group with polybasic acid.

Abstract: A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, having a lower impurity concentration than the first semiconductor layer, a third semiconductor layer of a second conductivity type provided on the second semiconductor layer, a base region of the second conductivity type provided in the third semiconductor layer, a source region of the first conductivity type provided in the base region, a first drain region of the first conductivity type provided in the third semiconductor layer, the first drain region being apart from the base region, a lightly doped drain region of the first conductivity type provided between the first drain region and the source region, the lightly doped drain region being in contact with the first drain region, the lightly doped drain having lower impurity concentration than the first drain region, a second drain region of the first conductivity t

Abstract: A semiconductor device including a semiconductor base, a first semiconductor region formed in the semiconductor base, a second semiconductor region formed in the semiconductor base, a third semiconductor region formed in the first semiconductor region, a first main electrode which is formed on the first and third semiconductor regions, a second main electrode which is formed on the second semiconductor region, an insulating film formed on the semiconductor base and first semiconductor region, and a gate electrode formed on the insulating film. The fourth semiconductor region is formed in the semiconductor base between the first and second semiconductor regions below an end region of the gate electrode.

Abstract: A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.

Abstract: A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.

Abstract: A lateral IGBT comprises an N−-type island region, a P-type base layer and P-type drain layer formed in the N−-type island region, an N+-type source layer formed in the P-type base layer, a source electrode connected to the P-type base layer and N+-type source layer, a drain electrode connected to the P-type drain layer, a gate oxide film and field oxide film formed on the N−-type island region, and a gate electrode formed on the gate oxide film. In this invention, an electrically floating P-type diffusion layer is formed in the N−-type island region below the end region of the gate electrode.

Abstract: The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.