Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.

Abstract: An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

Abstract: Disclosed are processes for depositing a silicon carbonitride (Si—C—N) material and resulting films. The process involves plasma enhanced chemical vapor deposition (PECVD), in which chemical precursors for silicon and carbon are supported by nitrogen gas (N2). Nitrogen gas not only supports the other chemical precursors and plasma species during the PECVD process, but also participates in the film formation. The nitrogen carrier gas is activated by plasma energy as other chemical precursors. Excited species of nitrogen gas react with excited species of silicon and carbon to deposit the Si—C—N material on a substrate. The use of nitrogen gas improves the stability of the plasma and eliminates arcing during the PECVD process. Further, the resulting Si—C—N material showed improved properties, such as less aging effects and improved thermal stability, as compared to processes using other carrier gases.

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.

Abstract: A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.