Abstract: A control method implemented by a computer configured to control a database that includes an aggregate item that records an aggregate value of transaction volume included in transaction data recorded in a blockchain, the control method including: obtaining a plurality of the transaction data recorded in the blockchain; specifying, for each of a plurality of second users who are transaction partners with a first user associated with the aggregate item, a transaction time with the first user on a basis of the plurality of transaction data; classifying the plurality of second users into a plurality of groups on a basis of dissimilarity of the transaction time; and generating the aggregate item for each of the groups in the database.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A game system includes a game apparatus providing gameplay concerning development of characters evolving through multiple evolution stages and an information communication terminal with the game apparatus, which causes a display unit to display an evolution flow indicating a group of characters. Type information uniquely identifying the type and the evolution state of each character is defined. The evolution flow is displayed in an aspect in which at least part of the characters is unidentifiable in an initial state and is configured so that the number of kinds of the characters in each evolution stage is identifiable. The information communication terminal includes a first acquisition unit acquiring the type information and a display control unit that changes the evolution flow including the character having the acquired type information from an unidentifiable aspect to an identifiable aspect to cause the display unit to display the evolution flow.

Abstract: A game apparatus provides gameplay concerning development of characters evolving through multiple evolution stages. Type information uniquely identifying the type and the evolution state of each character capable of being developed in the game apparatus is defined. The game apparatus includes a first acquisition unit acquiring information about a state of activity of a wearer; an update unit updating a first parameter and a second parameter concerning a developing character based on the information about the state of activity and the type information about the developing character; a display control unit causing a display unit to display the developing character in a display mode corresponding to the first and second parameters; an accumulation unit accumulating an evolution score concerning development of the developing character based on the first and second parameters; and a determination unit determining a target character of the developing character based on the evolution score.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A bearing (12) being a recessed section that receives a spindle (20) is provided in a lower surface (10B) of a susceptor (10). The bearing (12) has a tapers from the lower surface (10B) towards an upper surface (10A). A gap (12B) is provided in an side wall (12A) of the bearing (12), further on the outside of the bearing (12) than a fitting surface (12X) between the bearing (12) and the spindle (20) in the horizontal direction. As a result, reduction in the fitting force between the susceptor bearing and the spindle can be suppressed and susceptor temperature reduction in the vicinity of the bearing can also be suppressed.

Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.

Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.

Abstract: A boron nitride/resin composite circuit board having high heat dissipation characteristics and high reliability is provided. A boron nitride/resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 ?m, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1/CTE2) is 0.5 to 2.0.

Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.

Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: A boron nitride/resin composite circuit board having high heat dissipation characteristics and high relyability is provided. A boron nitride/resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 ?m, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1/CTE2) is 0.5 to 2.0.

Abstract: A bearing (12) being a recessed section that receives a spindle (20) is provided in a lower surface (10B) of a susceptor (10). The bearing (12) has a tapers from the lower surface (10B) towards an upper surface (10A). A gap (12B) is provided in an side wall (12A) of the bearing (12), further on the outside of the bearing (12) than a fitting surface (12X) between the bearing (12) and the spindle (20) in the horizontal direction. As a result, reduction in the fitting force between the susceptor bearing and the spindle can be suppressed and susceptor temperature reduction in the vicinity of the bearing can also be suppressed.

Abstract: Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of exposing the workpiece to plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode; and a second step of further exposing the workpiece to the plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode. A distance between the placing table and the upper electrode in the first step is at least 5/3 times of a distance between the placing table and the upper electrode in the first step.